Transistors IC SMD Type PNP General Purpose Transistor 2PA1576 Features Low current (max. 100 mA) Low voltage (max. 40 V). Low collector capacitance (typ. 2.5 pF). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -40 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA Peak collector current ICM -200 mA Peak base current IBM -200 mA mW Total power dissipation Ptot 200 Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Tamb -65 to +150 thermal resistance from junction to ambient Rth j-a 625 K/W Electrical Characteristics Ta = 25 Parameter Symbol Collector cut-off current ICBO Testconditons Min Typ IE = 0; VCB = -30 V IE = 0; VCB = -30 V; Tj = 150 Emitter cut-off current IEBO IC = 0; VEB = -4 V DC current gain 2PA1576Q 2PA1576R 2PA1576S hFE IC = -1 mA; VCE = -6 V Collector capacitance Cc IE = ie = 0; VCB = -12 V; f = 1 MHz Transition frequency fT IC = -2 mA; VCE = -12 V; f = 100 MHz 300 ìs; ä 2.5 100 Unit -100 nA -5 ìA -100 nA 270 390 560 VCE(sat) IC = -50 mA; IB = -5 mA; * Collector-emitter saturation voltage * Pulse test: tp 120 180 270 Max -500 mV 3.5 pF MHz 0.02. hFE Classification TYPE 2PA1576Q 2PA1576R 2PA1576S Marking FQ FR FS www.kexin.com.cn 1