IC MOSFET SMD Type Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor KO8822 TSSOP-8 ■ Features Unit: mm ● VDS (V) = 20V ● ID = 7A (VGS=10V) ● RDS(ON) ＜ 21mΩ (VGS = 10V) ● RDS(ON) ＜ 24mΩ (VGS = 4.5V) ● RDS(ON) ＜ 32mΩ (VGS = 2.5V) ● RDS(ON) ＜ 50mΩ (VGS = 1.8V) D1 D1/D2 S1 S1 G1 1 2 3 4 D1/D2 S2 S2 G2 8 7 6 5 G1 D2 G2 S2 S1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current *1 TA=25℃ 7 ID 5.7 TA=70℃ Pulsed Drain Current *2 Power Dissipation *1 IDM TA=25℃ A 30 1.5 PD W 0.96 TA=70℃ Maximum Junction-to-Ambient *1 t ≤ 10s Maximum Junction-to-Ambient *1 Steady-State Junction and Storage Temperature Range 83 RθJA ℃/W 130 TJ, TSTG -55 to 150 ℃ 2 *1The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25℃ *2 Repetitive rating, pulse width limited by junction temperature. www.kexin.com.cn 1 MOSFET IC SMD Type KO8822 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current Testconditons ID=250μA, VGS=0V VDS=16V, VGS=0V ,TJ=55℃ 5 IGSS VDS=0V, VGS=±10V VDS=VGS ID=250μA 0.5 On state drain current ID(ON) VGS=4.5V, VDS=5V 30 Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge Qg 0.8 nA 1 V A 16.5 21 23 28 19 24 VGS=2.5V, ID=5.5A 25 32 VGS=1.8V, ID=2A 36 50 TJ=125℃ VDS=5V, ID=7A μA ±100 VGS=4.5V, ID=6.6A VGS=4.5V, ID=7A Unit V 1 VGS(th) RDS(ON) Max VDS=16V, VGS=0V Gate Threshold Voltage Static Drain-Source On-Resistance Typ 20 VGS=10V, ID=7A 24 mΩ S 630 VGS=0V, VDS=10V, f=1MHz pF 164 137 VGS=0V, VDS=0V, f=1MHz 1.5 Ω 9.3 VGS=4.5V, VDS= =10V, ID=7A nC Gate Source Charge Qgs Gate Drain Charge Qgd 3.6 Turn-On DelayTime tD(on) 5.7 ns 11.5 ns 31.5 ns 9.7 ns Turn-On Rise Time tr Turn-Off DelayTime tD(off) Turn-Off FallTime VGS=5V, VDS=10V, RL=1.4Ω,RGEN=3Ω tf 0.6 Body Diode Reverse Recovery Time trr IF=7A, dI/dt=100A/μs 15.2 ns Body Diode Reverse Recovery Charge Qrr IF=7A, dI/dt=100A/μs 6.3 nC Maximum Body-Diode Continuous Current IS Diode Forward Voltage 2 Min www.kexin.com.cn VSD IS=1A,VGS=0V 0.7 2.5 A 1 V