MOSFET SMD Type P-Channel Enhancement Mode Field Effect Transistor KO3413 SOT-23 ■ Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● VDS (V) = -20V 0.4 3 ● RDS(ON) ＜ 130mΩ (VGS = -2.5V) 1 D 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 +0.1 0.97-0.1 ● RDS(ON) ＜ 190mΩ (VGS = -1.8V) 0.55 ● RDS(ON) ＜ 97mΩ (VGS = -4.5V) +0.1 1.3-0.1 +0.1 2.4-0.1 ● ID = -3 A 0-0.1 G +0.1 0.38-0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current *1 TA=25℃ -3 ID -2.4 TA=70℃ Pulsed Drain Current *2 Power Dissipation *1 IDM TA=25℃ -15 1.4 PD Thermal Resistance.Junction-to-Ambient *1 W 0.9 TA=70℃ Junction and Storage Temperature Range A RθJA 125 ℃/W TJ, TSTG -55 to 150 ℃ 2 *1The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25℃ *2 Repetitive rating, pulse width limited by junction temperature. www.kexin.com.cn 1 MOSFET SMD Type KO3413 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current Gate Threshold Voltage IGSS VGS(th) Testconditons Min On state drain current RDS(ON) ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge Qg Max -20 ID=-250μA, VGS=0V -1 VDS=-16V, VGS=0V ,TJ=55℃ -5 -0.3 ±100 μA -1 V 81 97 111 135 VGS=-2.5V, ID=-2.6A 108 130 VGS=-1.8V, ID=-1A 146 190 VGS=-4.5V, ID=-3A TJ=125℃ VGS=-4.5V, VDS=-5V VDS=-5V, ID=-3A VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=- =-10V, ID=-3A -15 4 μA -0.55 VDS=0V, VGS=±8V VDS=VGS ID=-250μA Unit V VDS=-16V, VGS=0V VGS=-4.5V, ID=-3A Static Drain-Source On-Resistance Typ mΩ A 7 S 540 pF 72 pF 49 pF 12 Ω 6.1 nC Gate Source Charge Qgs 0.6 nC Gate Drain Charge Qgd 1.6 nC Turn-On DelayTime tD(on) 10 ns 12 ns 44 ns 22 ns Turn-On Rise Time tr Turn-0ff DelayTime tD(off) Turn-Off Fall Time tf VGS=-4.5V, VDS=-10V, RL3.3Ω,RGEN=3Ω Body Diode Reverse Recovery Time trr IF=-3A, dI/dt=100A/µs 21 ns Body Diode Reverse Recovery Charge Qrr IF=-3A, dI/dt=100A/µs 7.5 nC Maximum Body-Diode Continuous Current IS Diode Forward Voltage VSD IS=-1A,VGS=0V -0.78 -2 A -1 V www.kexin.com.cn 2