MOSFET SMD Type Dual N-Channel Enhancement Mode Field Effect Transistor KI8205A TSSOP-8 Features Unit: mm ● Small footprint due to small and thin package ● Low drain-source ON resistance: r DS(on) = 0.025 @ VGS = 4.5 V Max rDS(on) = 0.029 @ VGS = 2.5V Max G2 S2 S2 D G1 S1 S1 D TSSOP-8 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS Pulsed Drain Current Maximum Power Dissipation TA = 25 V 6.5 A IDM 20 A 2.0 W 1.6 W PD TA = 70 Thermal Resistance,Junction-to-Ambient 10 ID Continuous Drain Current R JA Thermal Resistance,Junction-to-Case R JC Jumction temperature and Storage temperature Tj.Tstg 78 /W 40 /W -55 to +150 www.kexin.com.cn 1 MOSFET SMD Type KI8205A Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage IGSS Gate Threshold Voltage VGS(th) Drain-Source On-State Resistance * rDS(on) On-State Drain Current * ID(on) Forward Transconductance * gfs Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VGS = 0 V, ID = 250 A Min Typ Max 20 1 VDS = 20V , VGS = 0V , TJ =55 5 VDS = 0V , VGS = 8V VDS = VGS , ID = 250uA 100 0.5 1 1.5 VGS = 4.5V , ID = 6.5A 0.020 0.025 VGS = 2.5V , ID = 5.4A 0.018 0.029 VDS = 5V , VGS = 4.5V VDS = 5V , ID =3A VDS = 10 V, VGS = 0 V,f = 1.0 MHz 15 pF 175 pF 85 pF 7 10 Qgd Turn-On Delay Time td(on) 8 16 tr 10 18 18 29 5 10 Fall Time tf IS Diode Forward Voltage * * Pulse test; pulse width www.kexin.com.cn VSD 300 s, duty cycle 2 %. Ù 700 Gate-Drain Charge Maximum Continuous Drain-Source Diode Forward Current V S Qg td(off) nA 11 Qgs Turn-Off Delay Time uA A Total Gate Charge VDS = 10V , VGS = 4.5V , ID = 3A Unit V VDS = 20V , VGS = 0V Gate-Source Charge Rise Time 2 Testconditons nC 1.2 1.9 VDD = 10V ID = 1A , VGS = 4.5V , RG = 6 IS = 1.7 A, VGS = 0 V 0.65 ns 1.3 A 1.2 V