V436516S04VTG-10PC 3.3 VOLT 16M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE MOSEL VITELIC PRELIMINARY Features Description ■ 168 Pin Unbuffered 16,777,216 x 64 bit Oganization SDRAM DIMM ■ Utilizes High Performance 128 Mbit, 16M x 8 SDRAM in TSOPII-54 Packages ■ Fully PC Board Layout Compatible to INTEL’S Rev 1.0 Module Specification ■ Single +3.3V (± 0.3V) Power Supply ■ Programmable CAS Latency, Burst Length, and Wrap Sequence (Sequential & Interleave) ■ Auto Refresh (CBR) and Self Refresh ■ All Inputs, Outputs are LVTTL Compatible ■ 4096 Refresh Cycles every 64 ms ■ Serial Present Detect (SPD) ■ SDRAM Performance The V436516S04VTG-10PC memory module is organized 16,777,216 x 64 bits in a 168 pin dual in line memory module (DIMM). The 16M x 64 memory module uses 8 Mosel-Vitelic 16M x 8 SDRAM. The x64 modules are ideal for use in high performance computer systems where increased memory density and fast access times are required. Component Used -8 Units tCK Clock Frequency (max.) 125 MHz tAC Clock Access Time CAS Latency = 3 6 ns ■ Supported Latencies at 100 MHz Operation CL tRCD tRP tRC 3 2 2 7 CLK 2 2 2 7 CLK V436516S04VTG-10PC-01 V436516S04VTG-10PC Rev. 1.1 June 2000 1 V436516S04VTG-10PC MOSEL VITELIC Pin Configurations (Front Side/Back Side) Pin Front Pin Front Pin Front Pin Back Pin Back Pin Back 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 VSS I/O1 I/O2 I/O3 I/O4 VCC I/O5 I/O6 I/O7 I/O8 I/O9 VSS I/O10 I/O11 I/O12 I/O13 I/O14 VCC I/O15 I/O16 CBO* CB1* VSS NC NC VCC WE DQM0 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 DQM1 CS0 DU VSS A0 A2 A4 A6 A8 A10(AP) BA1 VCC VCC CLK0 VSS DU CS2 DQM2 DQM3 DU VCC NC NC CB2* CB3* VSS I/O17 I/O18 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 I/O19 I/O20 VCC I/O21 NC DU CKE1 VSS I/O22 I/O23 I/O24 VSS I/O25 I/O26 I/O27 I/O28 VCC I/O29 I/O30 I/O31 I/O32 VSS CLK2 NC WP SDA SCL VCC 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 VSS I/O33 I/O34 I/O35 I/O36 VCC I/O37 I/O38 I/O39 I/O40 I/O41 VSS I/O42 I/O43 I/O44 I/O45 I/O46 VCC I/O47 I/O48 CB4* CB5* VSS NC NC VCC CAS DQM4 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 DQM5 CS1 RAS VSS A1 A3 A5 A7 A9 BA0 A11 VCC CLK1 NC VSS CKE0 CS3 DQM6 DQM7 DU VCC NC NC CB6* CB7* VSS I/O49 I/O50 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 I/O51 I/O52 VCC I/O53 NC DU NC VSS I/O54 I/O55 I/O56 VSS I/O57 I/O58 I/O59 I/O60 VCC I/O61 I/O62 I/O63 I/O64 VSS CLK3 NC SA0 SA1 SA2 VCC Notes: * These pins are not used in this module. Pin Names A0–A11 Address Inputs I/O1–I/O64 Data Inputs/Outputs RAS Row Address Strobe CAS Column Address Strobe WE Read/Write Input BA0, BA1 Bank Selects CKE0, CKE1 Clock Enable CS0–CS3 Chip Select CLK0–CLK3 Clock Input DQM0–DQM7 Data Mask VCC Power (+3.3 Volts) VSS Ground SCL Clock for Presence Detect V436516S04VTG-10PC Rev. 1.1 June 2000 2 SDA Serial Data OUT for Presence Detect SA0–A2 Serial Data IN for Presence Detect CB0–CB7 Check Bits (x72 Organization) NC No Connection DU Don’t Use V436516S04VTG-10PC MOSEL VITELIC Part Number Information V 4 3 65 16 S 0 4 V G T - 10PC MOSEL-VITELIC MANUFACTURED 100 MHz PC100 2-2-2 SDRAM GOLD TSOP 3.3V WIDTH LVTTL DEPTH 4 BANKS 168 PIN UNBUFFERED DIMM X 8 COMPONENT REFRESH RATE 4K V436516S04VTG-10PC-02 Block Diagram WE CS0 CS DQM WE I/O1–I/O8 DQM0 I/O1–I/O8 D0 DQM4 I/O40–I/O33 10 DQM WE I/O1–I/O8 CS DQM WE I/O1–I/O8 CS WE DQM I/O1–I/O8 CS WE DQM I/O1–I/O8 CS D4 10 CS DQM WE I/O1–I/O8 DQM1 I/O9–I/O16 D1 DQM5 I/O48–I/O41 10 D5 10 CS2 CS WE DQM I/O1–I/O8 DQM2 I/O17–I/O24 D2 DQM6 I/O49–I/O56 10 D6 10 CS WE DQM I/O1–I/O8 DQM3 I/O25–I/O32 D3 DQM7 I/O57–I/O64 10 D7 10 E2PROM SPD (256 WORD X 8 BITS) SCL0 SA2 SA1 SA0 CKE0 CKE: SDRAM D0-D7 RAS RAS: SDRAM D0-D7 CAS CAS: SDRAM D0-D7 WE WE: SDRAM D0-D7 SDA WP 47K A(11:0) BA0, BA1 CLOCK WIRING CLOCK INPUT LOAD CLK0 CLK1 CLK2 CLK3 4 SDRAMS +3.3pF Cap Termination 4 SDRAMS +3.3pF Cap Termination V436516S04VTG-10PC Rev. 1.1 June 2000 VCC VSS A(11:0): SDRAM D0-D7 BA0, BA1: SDRAM D0-D7 D0-D7 C0-C15 D0-D7 V436516S04VTG-10PC-03 3 V436516S04VTG-10PC MOSEL VITELIC Serial Presence Detect Information written into the E2PROM device during module production using a serial presence detect protocol (I2C synchronous 2-wire bus) A serial presence detect storage device E PROM - is assembled onto the module. Information about the module configuration, speed, etc. is 2 SPD-Table: Hex Value Byte Number Function Described SPD Entry Value 100 MHz -10PC 0 Number of SPD bytes 128 80 1 Total bytes in Serial PD 256 08 2 Memory Type SDRAM 04 3 Number of Row Addresses (without BS bits) 12 0C 4 Number of Column Addresses (for x8 SDRAM) 10 0A 5 Number of DIMM Banks 2 02 6 Module Data Width 64 40 7 Module Data Width (continued) 0 00 8 Module Interface Levels LVTTL 01 9 SDRAM Cycle Time at CL=3 10.0 ns A0 10 SDRAM Access Time from Clock at CL=3 6.0 ns 60 11 Dimm Config (Error Det/Corr.) none 00 12 Refresh Rate/Type Self-Refresh, 15.6µs 80 13 SDRAM width, Primary x8 08 14 Error Checking SDRAM Data Width n/a / x8 00 15 Minimum Clock Delay from Back to Back Random Column Address tccd = 1 CLK 01 16 Burst Length Supported 1, 2, 4, 8 & full Page 8F 17 Number of SDRAM Banks 4 04 18 Supported CAS Latencies CL = 2 & 3 06 19 CS Latencies CS Latency = 0 01 20 WE Latencies WL = 0 01 21 SDRAM DIMM Module Attributes Non Buffered/Non Reg. 00 22 SDRAM Device Attributes: General Vcc tol ± 10% 0E 23 Minimum Clock Cycle Time at CAS Latency = 2 10.0 ns A0 24 Maximum Data Access Time from Clock for CL = 2 6.0 ns 60 25 Minimum Clock Cycle Time at CL = 1 Not Supported 00 26 Maximum Data Access Time from Clock at CL = 1 Not Supported 00 27 Minimum Row Precharge Time tRP 20 ns 14 28 Minimum Row Active to Row Active Delay tRRD 16 ns 10 29 Minimum RAS to CAS Delay tRCD 20 ns 14 V436516S04VTG-10PC Rev. 1.1 June 2000 4 V436516S04VTG-10PC MOSEL VITELIC SPD-Table: (Continued) Hex Value Byte Number Function Described SPD Entry Value 100 MHz -10PC 30 Minimum RAS Pulse Width tRAS 45 ns 2D 31 Module Bank Density (Per Bank) 128 MByte 20 32 SDRAM Input Setup Time 2 ns 20 33 SDRAM Input Hold Time 1 ns 10 34 SDRAM Data Input Setup Time 2 ns 20 35 SDRAM Data Input Hold Time 1 ns 10 36-61 Superset Information (May be used in Future) 00 62 SPD Revision 63 Checksum for Bytes 0 - 62 FD Manufacturers’s Information (Optional) XX 64-125 Revision 1.2 12 126 Max. Frequency Specification 100 MHz 64 127 100 MHz Support Details AF 128+ Unused Storage Location 00 DC Characteristics TA = 0°C to 70°C; VSS = 0 V; VDD, VDDQ = 3.3V ± 0.3V Limit Values Symbol Parameter Min. Max. Unit VIH Input High Voltage 2.0 VCC+0.3 V VIL Input Low Voltage –0.5 0.8 V VOH Output High Voltage (IOUT = –2.0 mA) 2.4 — V VOL Output Low Voltage (IOUT = 2.0 mA) — 0.4 V II(L) Input Leakage Current, any input (0 V < VIN < 3.6 V, all other inputs = 0V) –40 40 µA IO(L) Output leakage current (DQ is disabled, 0V < VOUT < VCC) –40 40 µA V436516S04VTG-10PC Rev. 1.1 June 2000 5 V436516S04VTG-10PC MOSEL VITELIC Capacitance TA = 0°C to 70°C; VDD = 3.3V ± 0.3V, f = 1 MHz Limit Values Symbol Parameter Max. 16M x 64 Unit CI1 Input Capacitance (A0 to A11, RAS, CAS, WE) 60 pF CI2 Input Capacitance (CS0-CS3) 30 pF CICL Input Capacitance (CLK0-CLK3) 22 pF CI3 Input Capacitance (CKE0, CKE1) 50 pF CI4 Input Capacitance (DQM0-DQM7) 15 pF CIO Input/Output Capacitance (I/O1-I/064) 15 pF CSC Input Capacitance (SCL, SA0-2) 8 pF CSD Input/Output Capacitance (SA0-SA2) 10 pF Operating Currents TA = 0°C to 70°C, VCC = 3.3V ± 0.3V (Recommended operating conditions otherwise noted) Max. Symbol Parameter & Test Condition ICC1 Operating Current tRC = tRCMIN., tRC = tCKMIN. Active-precharge command cycling, without Burst Operation 1 bank operation Precharge Standby Current in Power Down Mode CS =VIH, CKE≤ VIL(max) ICC2P ICC2PS ICC2N Precharge Standby Current in Non-Power Down Mode CS =VIH, CKE≥ VIL(max) ICC2NS ICC3 ICC3P No Operating Current tCK = min, CS = VIH(min) bank ; active state ( 4 banks) -10PC Unit Note 1020 mA 7 tCK = min. 16 mA 7 tCK = Infinity 8 mA 7 tCK = min. 400 mA tCK = Infinity 40 mA CKE ≥ VIH(MIN.) 520 mA CKE ≥ VIL(MAX.) (Power down mode) 64 mA ICC4 Burst Operating Current tCK = min Read/Write command cycling 1100 mA 7,8 ICC5 Auto Refresh Current tCK = min Auto Refresh command cycling 1600 mA 7 ICC6 Self Refresh Current Self Refresh Mode, CKE=0.2V 16 mA 8 mA L-version Notes: 1. These parameters depend on the cycle rate and these values are measured by the cycle rate under the minimum value of tCK and tRC. Input signals are changed one time during tCK. 2. These parameter depend on output loading. Specified values are obtained with output open. V436516S04VTG-10PC Rev. 1.1 June 2000 6 V436516S04VTG-10PC MOSEL VITELIC AC Characteristics 3,4 TA = 0° to 70°C; VSS = 0V; VCC = 3.3V ± 0.3V, tT = 1 ns Limit Values -10PC # Symbol Parameter Min. Max. Unit Note Clock and Clock Enable 1 2 3 tCK fCK tAC Clock Cycle Time CAS Latency = 3 CAS Latency = 2 10 10 System frequency CAS Latency = 3 CAS Latency = 2 – – 100 100 MHz MHz Clock Access Time CAS Latency = 3 CAS Latency = 2 – – 6 6 ns ns ns ns 4,5 4 tCH Clock High Pulse Width 3 – ns 6 5 tCL Clock Low Pulse Width 3 – ns 6 6 tCS Input Setup time 2 – ns 7 7 tCH Input Hold Time 1 – ns 7 8 tCKSP CKE Setup Time (Power down mode) 2.5 – ns 8 9 tCKSR CKE Setup Time (Self Refresh Exit) 8 – ns 9 10 tT Transition time (rise and fall) 1 – ns Common Parameters 11 tRCD RAS to CAS delay 20 – ns 12 tRC Cycle Time 70 120k ns 13 tRAS Active Command Period 45 – ns 14 tRP Precharge Time 20 – ns 15 tRRD Bank to Bank Delay Time 16 – ns 16 tCCD CAS to CAS delay time (same bank) 1 – CLK Refresh Cycle 17 tSREX Self Refresh Exit Time 10 – ns 9 18 tREF Refresh Period (4096 cycles) 64 – ms 8 4 Read Cycle 19 tOH Data Out Hold Time 3 – ns 20 tLZ Data Out to Low Impedance Time 0 – ns 21 tHZ Data Out to High Impedance Time 3 9 ns 22 tDQZ DQM Data Out Disable Latency 2 – CLK 10 Write Cycle 23 tDPL Data input to Precharge (write recovery) 2 – CLK 24 tDAL Data In to Active/refresh 5 – CLK 25 tDQW DQM Write Mask Latency 0 – CLK V436516S04VTG-10PC Rev. 1.1 June 2000 7 11 V436516S04VTG-10PC MOSEL VITELIC Notes: 1. The specified values are valid when addresses are changed no more than once during tCK(min.) and when No Operation commands are registered on every rising clock edge during tRC(min). Values are shown per module bank. 2. The specified values are valid when data inputs (DQ’s) are stable during tRC(min.). 3. All AC characteristics are shown for device level. An initial pause of 100 µs is required after power-up, then a Precharge All Banks command must be given followed by 8 Auto Refresh (CBR) cycles before the Mode Register Set Operation can begin. 4. AC timing tests have VIL = 0.4V and VIH = 2.4V with the timing referenced to the 1.4V crossover point. The transition time is measured between VIH and VIL. All AC measurements assume tT = 1 ns with the AC output load circuit shown. Specific tac and toh parameters are measured with a 50 pF only, without any resistive termination and with a input signal of 1V / ns edge rate between 0.8V and 2.0V. + 1.4 V tCH 2.4V CLOCK 50 Ohm 0.4V tCL tSETUP Z=50 Ohm tT I/O tHOLD 50 pF 1.4V INPUT tAC tAC tLZ I/O tOH 50 pF 1.4V OUTPUT Measurement conditions for tac and toh tHZ 5. If clock rising time is longer than 1 ns, a time (tT/2 -0.5) ns has to be added to this parameter. 6. Rated at 1.5V 7. If tT is longer than 1 ns, a time (tT -1) ns has to be added to this parameter. 8. Any time that the refresh Period has been exceeded, a minimum of two Auto (CBR) Refresh commands must be given to “wake-up” the device. 9. Self Refresh Exit is a synchronous operation and begins on the 2nd positive clock edge after CKE returns high. Self Refresh Exit is not complete until a time period equal to tRC is satisfied once the Self Refresh Exit command is registered. 10. Referenced to the time which the output achieves the open circuit condition, not to output voltage levels. 11. tDAL is equivalent to tDPL + tRP. V436516S04VTG-10PC Rev. 1.1 June 2000 8 V436516S04VTG-10PC MOSEL VITELIC Package Diagram SDRAM DIMM Module Package All measurements in mm 133.35 (2.54 max) 10 11 40 41 84 3.0 1 17.78 35.00 127.35 42.18 1.27 ± 0.100 66.68 A 85 B 94 95 124 C 125 168 6.35 3.125 3.125 6.35 2.0 8.25 4.45 Detail A 1.27 1.0 + 0.5 2.4 min. D 0.2 ± 0.15 2.0 Detail B 2.26 Detail C V436516S04VTG-10PC-04 RADIUS 1.27 + 0.10 Tolerances: ± (0.13) unless otherwise specified. V436516S04VTG-10PC Rev. 1.1 June 2000 9 V436516S04VTG-10PC MOSEL VITELIC Label Information MOSEL VITELIC Part Number Criteria of PC100 or PC133 (refer to MVI datasheet) V436516S04VTG-10PC PC100U-222-612-A Taiwan XXXX-XXXXXXX DIMM manufacture date code Trace Code PC100 U - 222 - 6 12 - A UNBUFFERED DIMM Gerber file Intel® PC100 x 8 Based CL = 2 (CLK) tRCD = 2 (CLK) tRP = 2 (CLK) V436516S04VTG-10PC Rev. 1.1 June 2000 Intel SPD Revision 1.2 tAC = 6 ns 10 V436516S04VTG-10PC-05 MOSEL VITELIC WORLDWIDE OFFICES V436516S04VTG-10PC U.S.A. TAIWAN SINGAPORE UK & IRELAND 3910 NORTH FIRST STREET SAN JOSE, CA 95134 PHONE: 408-433-6000 FAX: 408-433-0952 7F, NO. 102 MIN-CHUAN E. ROAD, SEC. 3 TAIPEI PHONE: 886-2-2545-1213 FAX: 886-2-2545-1209 10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 PHONE: 65-3231801 FAX: 65-3237013 NO 19 LI HSIN ROAD SCIENCE BASED IND. PARK HSIN CHU, TAIWAN, R.O.C. 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