TI LM118-N

LM118-N, LM218-N, LM318-N
www.ti.com
SNOSBS8C – MARCH 1998 – REVISED MARCH 2013
LM118-N/lm218-N/LM318-N Operational Amplifiers
Check for Samples: LM118-N, LM218-N, LM318-N
FEATURES
DESCRIPTION
•
•
•
•
•
•
•
The LM118 series are precision high speed
operational amplifiers designed for applications
requiring wide bandwidth and high slew rate. They
feature a factor of ten increase in speed over general
purpose devices without sacrificing DC performance.
1
2
15 MHz Small Signal Bandwidth
Ensured 50V/μs Slew Rate
Maximum Bias Current of 250 nA
Operates from Supplies of ±5V to ±20V
Internal Frequency Compensation
Input and Output Overload Protected
Pin Compatible with General Purpose Op
Amps
The LM118 series has internal unity gain frequency
compensation. This considerably simplifies its
application since no external components are
necessary for operation. However, unlike most
internally compensated amplifiers, external frequency
compensation may be added for optimum
performance. For inverting applications, feedforward
compensation will boost the slew rate to over
150V/μs and almost double the bandwidth.
Overcompensation can be used with the amplifier for
greater stability when maximum bandwidth is not
needed. Further, a single capacitor can be added to
reduce the 0.1% settling time to under 1 μs.
The high speed and fast settling time of these op
amps make them useful in A/D converters, oscillators,
active filters, sample and hold circuits, or general
purpose amplifiers. These devices are easy to apply
and offer an order of magnitude better AC
performance than industry standards such as the
LM709.
The LM218-N is identical to the LM118 except that
the LM218-N has its performance specified over a
−25°C to +85°C temperature range. The LM318-N is
specified from 0°C to +70°C.
Fast Voltage Follower
Do not hard-wire as voltage follower (R1 ≥ 5 kΩ)
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 1998–2013, Texas Instruments Incorporated
LM118-N, LM218-N, LM318-N
SNOSBS8C – MARCH 1998 – REVISED MARCH 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings (1) (2)
Supply Voltage
±20V
Power Dissipation
(3)
Differential Input Current
Input Voltage
500 mW
(4)
±10 mA
(5)
±15V
Output Short-Circuit Duration
Continuous
Operating Temperature Range
lm118-n
−55°C to +125°C
LM218-N
−25°C to +85°C
LM318-N
0°C to +70°C
−65°C to +150°C
Storage Temperature Range
Lead Temperature (Soldering, 10 sec.)
TO-99 Package
300°C
PDIP Package
260°C
Soldering Information
Dual-In-Line Package
Soldering (10 sec.)
260°C
SOIC Package
Vapor Phase (60 sec.)
215°C
Infrared (15 sec.)
220°C
ESD Tolerance
(1)
(2)
(3)
(4)
(5)
(6)
(6)
2000V
Refer to RETS118X for LM118H and LM118J military specifications.
If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
The maximum junction temperature of the lm118-n is 150°C, the LM218-N is 110°C, and the LM318-N is 110°C. For operating at
elevated temperatures, devices in the LMC package must be derated based on a thermal resistance of 160°C/W, junction to ambient, or
20°C/W, junction to case. The thermal resistance of the dual-in-line package is 100°C/W, junction to ambient.
The inputs are shunted with back-to-back diodes for overvoltage protection. Therefore, excessive current will flow if a differential input
voltage in excess of 1V is applied between the inputs unless some limiting resistance is used.
For supply voltages less than ±15V, the absolute maximum input voltage is equal to the supply voltage.
Human body model, 1.5 kΩ in series with 100 pF.
Electrical Characteristics
(1)
Parameter
Conditions
LM118-N/LM218-N
Min
Typ
Max
2
4
LM318-N
Min
Units
Typ
Max
4
10
mV
nA
Input Offset Voltage
TA = 25°C
Input Offset Current
TA = 25°C
6
50
30
200
Input Bias Current
TA = 25°C
120
250
150
500
Input Resistance
TA = 25°C
Supply Current
TA = 25°C
Large Signal Voltage Gain
TA = 25°C, VS = ±15V
1
3
50
50
nA
0.5
3
200
25
200
V/mV
70
50
70
V/μs
5
8
5
MΩ
10
mA
VOUT = ±10V, RL ≥ 2 kΩ
Slew Rate
TA = 25°C, VS = ±15V, AV = 1
Small Signal Bandwidth
TA = 25°C, VS = ±15V
(2)
15
15
MHz
Input Offset Voltage
6
15
mV
Input Offset Current
100
300
nA
(1)
(2)
2
These specifications apply for ±5V ≤ VS ≤ ±20V and −55°C ≤ TA ≤ +125°C (lm118-n), −25°C ≤ TA ≤ +85°C (LM218-N), and 0°C ≤ TA ≤
+70°C (LM318-N). Also, power supplies must be bypassed with 0.1 μF disc capacitors.
Slew rate is tested with VS = ±15V. The lm118-n is in a unity-gain non-inverting configuration. VIN is stepped from −7.5V to +7.5V and
vice versa. The slew rates between −5.0V and +5.0V and vice versa are tested and specified to exceed 50V/μs.
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SNOSBS8C – MARCH 1998 – REVISED MARCH 2013
Electrical Characteristics (1) (continued)
Parameter
Conditions
LM118-N/LM218-N
Min
Typ
Input Bias Current
Max
LM318-N
Min
Typ
500
Supply Current
TA = 125°C
Large Signal Voltage Gain
VS = ±15V, VOUT = ±10V
4.5
25
Units
Max
750
7
nA
mA
20
V/mV
RL ≥ 2 kΩ
Output Voltage Swing
VS = ±15V, RL = 2 kΩ
Input Voltage Range
VS = ±15V
±12
±13
±11.5
±12
±13
±11.
5
V
V
Common-Mode Rejection Ratio
80
100
70
100
dB
Supply Voltage Rejection Ratio
70
80
65
80
dB
Copyright © 1998–2013, Texas Instruments Incorporated
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SNOSBS8C – MARCH 1998 – REVISED MARCH 2013
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TYPICAL PERFORMANCE CHARACTERISTICS
LM118-N, LM218-N
4
Input Current
Voltage Gain
Figure 1.
Figure 2.
Power Supply Rejection
Input Noise Voltage
Figure 3.
Figure 4.
Common Mode Rejection
Supply Current
Figure 5.
Figure 6.
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SNOSBS8C – MARCH 1998 – REVISED MARCH 2013
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
LM118-N, LM218-N
Closed Loop Output
Impedance
Current Limiting
Figure 7.
Figure 8.
Input Current
Unity Gain Bandwidth
Figure 9.
Figure 10.
Voltage Follower Slew Rate
Inverter Settling Time
Figure 11.
Figure 12.
Copyright © 1998–2013, Texas Instruments Incorporated
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LM118-N, LM218-N, LM318-N
SNOSBS8C – MARCH 1998 – REVISED MARCH 2013
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
LM118-N, LM218-N
6
Large Signal Frequency Response
Open Loop Frequency Response
Figure 13.
Figure 14.
Voltage Follower Pulse Response
Large Signal Frequency Response
Figure 15.
Figure 16.
Open Loop Frequency Response
Inverter Pulse Response
Figure 17.
Figure 18.
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SNOSBS8C – MARCH 1998 – REVISED MARCH 2013
Typical Performance Characteristics
LM318-N
Input Current
Voltage Gain
Figure 19.
Figure 20.
Power Supply Rejection
Input Noise Voltage
Figure 21.
Figure 22.
Common Mode Rejection
Supply Current
Figure 23.
Figure 24.
Copyright © 1998–2013, Texas Instruments Incorporated
Product Folder Links: LM118-N LM218-N LM318-N
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LM118-N, LM218-N, LM318-N
SNOSBS8C – MARCH 1998 – REVISED MARCH 2013
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Typical Performance Characteristics (continued)
LM318-N
8
Closed Loop Output Impedance
Current Limiting
Figure 25.
Figure 26.
Input Current
Unity Gain Bandwidth
Figure 27.
Figure 28.
Voltage Follower Slew Rate
Inverter Settling Time
Figure 29.
Figure 30.
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LM118-N, LM218-N, LM318-N
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SNOSBS8C – MARCH 1998 – REVISED MARCH 2013
Typical Performance Characteristics (continued)
LM318-N
Large Signal Frequency Response
Open Loop Frequency Response
Figure 31.
Figure 32.
Voltage Follower Pulse Response
Large Signal Frequency Response
Figure 33.
Figure 34.
Open Loop Frequency Response
Inverter Pulse Response
Figure 35.
Figure 36.
Copyright © 1998–2013, Texas Instruments Incorporated
Product Folder Links: LM118-N LM218-N LM318-N
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9
LM118-N, LM218-N, LM318-N
SNOSBS8C – MARCH 1998 – REVISED MARCH 2013
www.ti.com
AUXILIARY CIRCUITS
Figure 39. Offset Balancing
*Balance circuit necessary for increased
slew.
Slew rate typically 150V/μs.
Figure 37. Feedforward Compensation
for Greater Inverting Slew Rate
Figure 40. Isolating Large Capacitive Loads
Slew and settling time to 0.1% for a 10V
step change is 800 ns.
Figure 41. Overcompensation
Figure 38. Compensation for Minimum Settling
Time
10
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LM118-N, LM218-N, LM318-N
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SNOSBS8C – MARCH 1998 – REVISED MARCH 2013
TYPICAL APPLICATIONS
Do not hard-wire as voltage follower (R1 ≥ 5 kΩ)
Figure 42. Fast Voltage Follower
CF = Large
(CF ≥ 50 pF)
*Do not hard-wire as integrator or slow inverter; insert a 10k-5 pF network in series with the input, to prevent
oscillation.
Do not hard-wire as voltage follower (R1 ≥ 5 kΩ)
Figure 43.
Figure 44. Fast Summing Amplifier
Figure 45. Differential Amplifie
Copyright © 1998–2013, Texas Instruments Incorporated
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LM118-N, LM218-N, LM318-N
SNOSBS8C – MARCH 1998 – REVISED MARCH 2013
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Figure 46. Fast Sample and Hold
*Optional—Reduces settling time.
Figure 47. D/A Converter Using Ladder Network
12
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SNOSBS8C – MARCH 1998 – REVISED MARCH 2013
ΔOutput zero.
*“Y” zero
+“X” zero
‡Full scale adjust.
Figure 48. Four Quadrant Multiplier
*Optional—Reduces settling time.
Figure 49. D/A Converter Using Binary Weighted Network
Copyright © 1998–2013, Texas Instruments Incorporated
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LM118-N, LM218-N, LM318-N
SNOSBS8C – MARCH 1998 – REVISED MARCH 2013
www.ti.com
Figure 50. Fast Summing Amplifier with Low Input Current
Figure 51. Wein Bridge Sine Wave Oscillator
Figure 52. Instrumentation Amplifier
14
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LM118-N, LM218-N, LM318-N
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SNOSBS8C – MARCH 1998 – REVISED MARCH 2013
Schematic Diagram
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LM118-N, LM218-N, LM318-N
SNOSBS8C – MARCH 1998 – REVISED MARCH 2013
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Pin Diagram
Available per JM38510/10107.
Dual-In-Line Package
(Top View)
See Package Number J (R-GDIP-T14)
Available per JM38510/10107.
Dual-In-Line Package
(Top View)
See Package Number NAB008A, D (R-PDSO-G8),
or P (R-PDIP-T8)
Pin connections shown on schematic diagram and typical applications are for TO-99 package.
TO-99 Package
(Top View)
See Package Number LMC (O-MBCY-W8)
16
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Product Folder Links: LM118-N LM218-N LM318-N
LM118-N, LM218-N, LM318-N
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SNOSBS8C – MARCH 1998 – REVISED MARCH 2013
REVISION HISTORY
Changes from Revision B (March 2013) to Revision C
•
Page
Changed layout of National Data Sheet to TI format .......................................................................................................... 16
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PACKAGE OPTION ADDENDUM
www.ti.com
1-Nov-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LM118H
ACTIVE
TO-99
LMC
8
500
TBD
Call TI
Call TI
-55 to 125
LM118H
LM118H/NOPB
ACTIVE
TO-99
LMC
8
500
Green (RoHS
& no Sb/Br)
POST-PLATE
Level-1-NA-UNLIM
-55 to 125
LM118H
LM318M
NRND
SOIC
D
8
95
TBD
Call TI
Call TI
0 to 70
LM
318M
LM318M/NOPB
ACTIVE
SOIC
D
8
95
Green (RoHS
& no Sb/Br)
SN | CU SN
Level-1-260C-UNLIM
0 to 70
LM
318M
LM318MX/NOPB
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
SN | CU SN
Level-1-260C-UNLIM
0 to 70
LM
318M
LM318N
NRND
PDIP
P
8
40
TBD
Call TI
Call TI
0 to 70
LM
318N
LM318N/NOPB
ACTIVE
PDIP
P
8
40
Green (RoHS
& no Sb/Br)
SN | CU SN
Level-1-NA-UNLIM
0 to 70
LM
318N
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
1-Nov-2013
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
23-Sep-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
LM318MX/NOPB
Package Package Pins
Type Drawing
SOIC
D
8
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
2500
330.0
12.4
Pack Materials-Page 1
6.5
B0
(mm)
K0
(mm)
P1
(mm)
5.4
2.0
8.0
W
Pin1
(mm) Quadrant
12.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
23-Sep-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LM318MX/NOPB
SOIC
D
8
2500
367.0
367.0
35.0
Pack Materials-Page 2
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