8PT Series SEMICONDUCTOR RoHS RoHS Sensitive and Standard SCRs, 8A Main Features 2 Symbol Value Unit I T(RMS) 8 A 2 1 V DRM /V RRM 600 to 1000 V I GT 0.2 to 15 mA 1 2 2 3 3 TO-251 (I-PAK) (8PTxxF) TO-252 (D-PAK) (8PTxxG) 2 DESCRIPTION Available either in sensitive or standard gate triggering levels, the 8A SCR series is suitable to fit all modes of control found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits, capacitive discharge ignition and voltage regulation circuits. 1 2 1 3 TO-220AB (Non-lnsulated) 2 3 TO-220AB (lnsulated) (8PTxxAI) (8PTxxA) 2 (A2) Available in through-hole or surface-mount packages, they provide an optimized performance in a limited space. (G)3 1(A1) ABSOLUTE MAXIMUM RATINGS PARAMETER RMS on-state current full sine wave (180° conduction angle ) IT(RMS) Average on-state current (180° conduction angle) IT(AV) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) ITSM I2t Value for fusing TEST CONDITIONS SYMBOL TO-251/TO-252/TO-220AB Tc=110°C TO-220AB insulated Tc=100°C TO-251/TO-252/TO-220AB Tc=110°C TO-220AB insulated Tc=100°C VALUE UNIT 8 A 5.1 A F =50 Hz t = 20 ms 95 F =60 Hz t = 16.7 ms 100 t p = 10 ms I2t A 45 A2s Critical rate of rise of on-state current IG = 2xlGT, tr≤100ns dI/dt F = 60 Hz T j = 125ºC 50 A/µs Peak gate current IGM T p = 20 µs T j = 125ºC 4 A 1 W Average gate power dissipation Storage temperature range Operating junction temperature range PG(AV) T j =125ºC Tstg - 40 to + 150 Tj - 40 to + 125 ºC www.nellsemi.com Page 1 of 7 8PT Series SEMICONDUCTOR STANDARD ELECTRICAL SPECIFICATIONS (TJ = 25 ºC, unless otherwise specified) 8PTxxxx SYMBOL Unit TEST CONDITIONS Min. Max. Max. IGT VGT RoHS RoHS V D = 12 V, R L = 30Ω T - 0.5 5 15 2 mA 1.3 V 0.2 V VGD V D = V DRM , R L = 3.3KΩ IH I T = 100 mA, gate open Max. 25 30 mA IL I G = 1.2 I GT Max. 30 70 mA T j = 125°C Min. 50 150 V/µs T j = 25°C Max. 1.6 V dV/dt T j = 125°C V D = 67% V DRM , gate open Min. VTM I TM = 16A, t P = 380 µs Vto Threshold voltage T j = 125°C Max. 0.85 V Rd Dynamic resistance T j = 125°C Max. 46 mΩ IDRM IRRM T j = 25°C V DRM = V RRM T j = 125°C µA 1 mA 8PTxxxx-S Unit Max. 200 µA Max. 0.8 V Min. 0.1 V TEST CONDITIONS IGT VGT 5 (Tj = 25 ºC, unless otherwise specified) SENSITIVE ELECTRICAL CHARACTERISTICS SYMBOL Max. V D = 12 V, R L = 140Ω VGD V D = V DRM , R L = 3.3KΩ, R GK =220 Ω VRG I RG = 10 µ A Min. 8 V IH I T = 50 mA , R GK = 1 KΩ Max. 5 mA IL I G = 1 mA , R GK = 1 KΩ Max. 6 mA T j = 125°C Min. 5 V/µs T j = 25°C Max. 1.6 V dV/dt V D = 67% V DRM , R GK = 220Ω T j = 125°C VTM I TM = 16A, t P = 380 µs Vto Threshold voltage T j = 125°C Max. 0.85 V Rd Dynamic resistance T j = 125°C Max. 46 mΩ IDRM IRRM V DRM = V RRM, R GK = 220 Ω T j = 25°C Max. T j = 125°C 5 µA 1 mA VALUE UNIT THERMAL RESISTANCE Parameter SYMBOL Rth(j-c) 1.3 TO-220AB insulated 4.6 D-PAK 70 I-PAK 100 °C/W S = 0.5 cm 2 Rth(j-a) IPAK/DPAK/TO-220AB Junction to case (DC) Junction to ambient (DC) TO-220AB, TO-220AB insulated S=Copper surface under tab www.nellsemi.com Page 2 of 7 60 °C/W 8PT Series SEMICONDUCTOR RoHS RoHS PRODUCT SELECTOR VOLTAGE (x x) PART NUMBER PACKAGE SENSITIVITY 1000 V 600 V 800 V 8PTxxA-S/8PTxxAl-S V V V 200 µA TO-220AB 8PTxxA-T/8PTxxAl-T V V V 0.5~5 mA TO-220AB 8PTxxA/8PTxxAl V V V 2~15 mA TO-220AB 8PTxxF-S V V V 200 µA I-PAK 8PTxxF-T V V V 0.5~5 mA I-PAK 8PTxxF V V V 2~15 mA I-PAK 8PTxxG-S V V V 200 µA D-PAK 8PTxxG-T V V V 0.5~5 mA D-PAK 8PTxxG V V V 2~15 mA D-PAK ORDERING INFORMATION ORDERING TYPE MARKING PACKAGE WEIGHT , BASE Q TY DELIVERY MODE 8PTxxA-y 8PTxxA-y TO-220AB 2.0g 50 Tube 8PTxxAI-y 8PTxxAI-y TO-220AB (insulated) 2.3g 50 Tube 8PTxxF-y 8PTxxF-y TO-251(I-PAK) 0.40g 80 Tube 8PTxxG-y 8PTxxG-y TO-252(D-PAK) 0.38g 80 Tube Note: xx = voltage, y = sensitivity ORDERING INFORMATION SCHEME 8 PT 06 Current 8 = 8A, IT(RMS) SCR series Voltage Code 06 = 600V 08 = 800V 10 = 1000V Package type A = TO-220AB (non-insulated) AI = TO-220AB ( insulated) F = TO-251 (IPAK) G = TO-252 (DPAK) IGT Sensitivity S = 70~200 µA T = 0.5~5 mA Blank = 2~15 mA www.nellsemi.com Page 3 of 7 - S 8PT Series SEMICONDUCTOR Fig.1 Maximum average power dissipation versus average on-state current P(W) 10 9 8 α=180° 7 Fig.2 Average and DC on-state current versus case temperature I T(AV) (A) DPAK IPAK 7 6 5 5 4 TO-220AB DC 8 6 α=180° TO-220AB Insulated 4 3 360° 3 2 2 1 α 1 0 3 2 5 4 0 6 I T (AV)(A) 1.0 Recommended pad layout Fr4 printed circuit board DC α=180° 25 75 50 100 125 Fig.4 Relative variation of thermal impedance junction to case versus pulse duration Fig.3 Average and DC on-state current versus ambient temperature 2.5 T case (°C) 1 0 I T(AV) (A) 0 RoHS RoHS K=[Zth(j-c)/Rth(j-c)] 2.0 0.5 TO-220AB TO-220AB Insulated 1.5 1.0 0.2 DPAK IPAK 0.5 T amb (°C) 0.0 0 50 25 75 100 125 Fig.5 Relative variation of thermal impedance junction to ambient versus pulse duration 2.0 1.8 1.6 Recommended pad layout, FR4 printed circuit board 1.0 0.8 0.10 TO-220AB TO-220AB Insulated www.nellsemi.com 1E+0 1E+1 1E+2 I GT lH& IL R GK =1KΩ 0.6 0.4 0.2 0.0 -40 t p (s) 1E-1 1E+0 IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C] 1.4 1.2 DPAK 1E+1 1E+2 Fig.6 Relative variation of gate trigger current and holding current versus junction temperature for I GT =200 µ A K=[Zth(j-a)/Rth(j-a)] 1.00 0.01 1E-2 t p (s) 0.1 1E+3 5E+2 Page 4 of 7 T j (°C) -20 0 20 40 60 80 100 120 140 8PT Series SEMICONDUCTOR Fig.8 Relative variation of holding current versus gate-cathode resistance (typical values) Fig.7 Relative variation of gate trigger and holding current versus junction temperature I H [R GK ] / I H [R GK =1KΩ] IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C] 2.4 2.2 I GT 2.0 1.8 1.6 1.4 1.2 lH& IL 1.0 0.8 0.6 0.4 0.2 0.0 0 -40 -20 6.0 5.5 I GT =200µA 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1E-2 5mA & 15mA T j (°C) 40 20 60 80 100 120 140 Fig.9 Relative variation of dV/dt immunity versus gate-cathode resistance (typical values) for I G =200µA 10.00 RoHS RoHS T j =25 C R GK (KΩ) 1E-1 1E+0 1E+1 Fig.10 Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values) for I GT =200µA dV/dt[R GK ] / dV/dt[R GK =220Ω] 15.0 T j =125 ° C V D =0.67 X V DRM dV/dt[C GK ] / dV/dt[R GK =220Ω] V D =0.67 X V DRM T j =125 C R GK =220Ω 12.5 10.0 1.00 7.5 5.0 0.10 2.5 R GK (KΩ) 0.01 C GK (nF) 0.0 0 0 200 20 40 60 80 100 120 140 160 180 200 220 400 600 800 1000 1200 1400 1600 1800 2000 Fig.11 Surge peak on-state current versus number of cycles Fig.12 Non-repetitive surge peak on-state current and corresponding values of l²t I STM (A) 100 90 80 1000 I TSM (A),I²t(A²s) Tj inital=25 C I TSM t p =10ms 70 60 50 40 One cycle Non repetitive T j initial=25 ° C dI/dt Iimitation Sinusoidal pulse with width tp< 10ms 100 30 20 10 0 Repetitive Tc=110 ° C I²t Number of cycles 1 www.nellsemi.com 10 100 1000 Page 5 of 7 t p (ms) 10 0.01 0.10 1.00 10.00 Fig.14 Thermal resistance junction to ambient versus copper surface under tab (DPAK) Fig.13 On-state characteristics (maximum values) 50.0 RoHS RoHS 8PT Series SEMICONDUCTOR I TM (A) R th (j-a)( ° C/W) 100 Tjmax V t0 =0.85V Rd= 46 mΩ Epoxy printed circuit board FR4 copper thickness = 35µm 80 10.0 Tj=max 60 40 1.0 Tj=25 ° C 20 V TM (V) 0.1 0 0.0 S(cm²) 0 0.5 1.0 1.5 2.0 3.0 2.5 3.5 4 2 0 4.0 6 8 10 12 14 16 Case Style TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) 1 PIN 2 15.32 (0.603) 14.55 (0.573) 16.13 (0.635) 15.87 (0.625) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 3 4.06 (0.160) 3.56 (0.140) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 14.22 (0.560) 13.46 (0.530) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) TO-251 (I-PAK) 0.90 (0.035) 0.70 (0.028) 0.56 (0.022) 0.36 (0.014) 5.20 (0.205) 4.95 (0.195) 6.6(0.26) 2.4(0.095) 2.2(0.086) 6.4(0.52) 1.5(0.059) 5.4(0.212) 1.37(0.054) 5.2(0.204) 0.62(0.024) 0.48(0.019) 6.2(0.244) 4T 6(0.236) 16.3(0.641) 15.9(0.626) 1.9(0.075) 1.8(0.071) 0.85(0.033) 0.76(0.03) 9.4(0.37) 9(0.354) 0.65(0.026) 0.55(0.021) 4.6(0.181) 4.4(0.173) 0.62(0.024) 0.45(0.017) 2 (A2) (G)3 1(A1) www.nellsemi.com Page 6 of 7 18 20 8PT Series SEMICONDUCTOR RoHS RoHS Case Style TO-252 (D-PAK) 2.4(0.095) 2.2(0.086) 6.6(0.259) 6.4(0.251) 1.5(0.059) 5.4(0.212) 5.2(0.204) 1.37(0.054) 0.62(0.024) 0.48(0.019) 2 1 1.14(0.045) 0.76(0.030) 2.28(0.090) 2 3 9.35(0.368) 10.1(0.397) 0.89(0.035) 0.64(0.025) 6.2(0.244) 6(0.236) 0.62(0.024) 0.45(0.017) 2 (A2) 4.57(0.180) (G)3 1(A1) RoHS www.nellsemi.com Page 7 of 7