IGBT MODULE PTMB150A6 SixSix-Pack 150A 600V CIRCUIT OUTLINE DRAWING 12- fasten- tab No 110 Dimension(mm) Approximate Weight : 550g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol PTMB150A6 Unit VCES VGES IC ICP PC Tj Tstg VISO 600 +/ - 20 150 300 560 -40 to +150 -40 to +125 2500 2 1.4 V V FTOR Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition A W °C °C V N•m Min. Typ. Max. 4.0 - 2.1 15000 0.15 0.25 0.2 0.45 2.0 1.0 2.6 8.0 0.3 0.4 0.35 0.7 VCE=600V,VGE=0V VGE=+/- 20V,VCE=0V IC=150A,VGE=15V VCE=5V,IC=150mA VCE=10V,VGE=0V,f=1MHz VCC= 300V RL= 2 ohm RG= 5.1 ohm VGE= +/- 15V FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value DC 1 ms Forward Current Characteristic µs Unit 150 300 A Symbol Test Condition Min. Typ. Max. VF trr IF=150A,VGE=0V IF=150A,VGE=-10V,di/dt=150A/µs - 1.9 0.15 2.4 0.25 Unit V µs Peak Forward Voltage Reverse Recovery Time THERMAL CHARACTERISTICS Characteristic Thermal Impedance IF IFM Unit mA µA V V pF IGBT DIODE Symbol Test Condition Min. Typ. Max. Unit Rth(j-c) Junction to Case - - 0.22 0.45 °C/W PTMB150A6 Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Fig.1- Output Characteristics (Typical) TC=25℃ 300 VGE =20V Collector to Emitter Voltage V CE (V) Collector Current I C (A) I C=60A 15V 250 TC=25℃ 16 12V 10V 200 150 9V 100 50 8V 300A 14 150A 12 10 8 6 4 2 7V 0 0 2 4 6 8 0 10 0 4 Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Voltage V CE (V) 150A 12 10 8 6 4 2 0 4 8 12 16 RL=2Ω TC=25℃ 16 350 12 250 10 8 200 VCE =300V 150 6 200V 100 2 50 0 20 0 0 150 300 450 600 Total Gate Charge Qg (nC) 100000 Fig.6- Collector Current vs. Switching Time (Typical) 1 VGE =0V f=1MHZ TC=25℃ 50000 Cies Coes Cres VCC=300V RG=5.1Ω VGE =±15V TC=25℃ 0.9 0.8 Switching Time t (μs) Capacitance C (pF) 4 100V Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 10000 5000 2000 1000 500 0.7 0.6 0.5 toff 0.4 0.3 ton tf 0.2 200 100 14 300 Gate to Emitter Voltage V GE (V) 20000 tr 0.1 0.2 0.5 1 2 5 10 20 20 400 300A 14 0 16 50 Collector to Emitter Voltage V CE (V) 100 200 0 0 40 80 Collector Current IC (A) 120 160 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) IC=60A 12 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) TC=125℃ 16 8 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) PTMB150A6 Fig.8- Forward Characteristics of Free Wheeling Diode Fig.7- Series Gate Impedance vs. Switching Time (Typical) 5 VCC=300V I C=150A VG=±15V TC=25℃ TC=25℃ toff ton 1 tr 0.5 tf 0.2 200 150 100 50 0.1 0.05 1 10 0 100 0 1 2 Series Gate Impedance R G (Ω) 500 3 Fig.10- Reverse Bias Safe Operating Area (Typical) 1000 I F=150A TC=25℃ R G=5.1Ω VGE =±15V TC≦125℃ 500 200 200 Collector Current I C (A) trr 100 50 20 IRrM 10 4 Forward Voltage V F (V) Fig.9- Reverse Recovery Characteristics (Typical) 100 50 20 10 5 2 1 0.5 0.2 200 400 600 800 1000 0.1 1200 0 200 -di/dt (A/μs) 400 Fig.11- Transient Thermal Impedance FRD 2x10 -1 IGBT 1x10 -1 5x10 -2 2x10 -2 1x10 -2 5x10 -3 TC=25℃ 2x10 -3 1x10 1 Shot Pulse -3 10 -5 600 Collector to Emitter Voltage V CE (V) 5x10 -1 (℃/W) 0 (J-C) 5 Transient Thermal Impedance Rth Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) TC=125℃ 250 Forward Current I F (A) 2 Switching Time t (μs) (Typical) 300 10 -4 10 -3 10 -2 Time t (s) 10 -1 1 10 1 800