INFRA-RED Item No.: 127124 1. This specification applies to GaAlAs / GaAs Chips (substrate removed) 2. Structure 2.1 Mesa structure 2.2 Electrodes 3. Outlines (dimensions in microns) p-side (anode) n-side (cathode) Au alloy Au alloy n-Electrode n-Epitaxy GaAlAs Active Layer p-Epitaxy GaAlAs 120 365 270 p-Substrate GaAs p-Electrode 365 Wire bond contacts can also be square 4. Electrical and optical characteristics (T=25°C) Parameter Symbol Conditions VF IF = 20 mA Reverse voltage VR IR = output Power * Φe IF = 20 mA Forward voltage min max Unit 1,70 2,10 V 5 µA 10 0,6 Switching time tr, tf IF = 20 mA Peak wavelength λP IF = 20 mA Power measurement at OSA on gold plate 5. typ V 0,8 mW 40 740 ns nm Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. Φe typ min max Quantity © 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 [email protected]