IGBT Module IC80 = VCES = VCE(sat)typ. = PSII 100/12* Short Circuit SOA Capability Square RBSOA 90 A 1200 V 2.8 V Preliminary Data Sheet S15 R15 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot ECO-TOPTM 1 A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1 V1 K1 Q1 G1 N1 V3 V6 typical picture, for pin configuration see outline drawing *NTC optional t e e h r s e a t d a n d u l e l t i v t i n t s e a t t m c n p te odu elo pr dev Conditions Maximum Ratings TVJ = 25°C to 150°C 1200 V ± 20 V TC = 25°C TC = 80°C 130 90 A A VGE = ±15 V; RG = 15 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH 150 VCES A 10 µs 568 W VCE = VCES; VGE = ±15 V; RG = 15 Ω; TVJ = 125°C non-repetitive TC = 25°C Features • Symbol Conditions (TVJ VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Characteristic Values = 25°C, unless otherwise specified) min. typ. max. IC = 125 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 3 mA; VGE = VCE VCE = VCES; 2.8 3.2 4.5 VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 75 A VGE = 15/0 V; RG = 15 Ω Cies VCE = 25 V; VGE = 0 V; f = 1 MHz RthJC RthJH (per IGBT) with heatsink compound (0.42 K/m.K; 50 µm) 3.4 V V 6.5 V 5 16 mA mA 320 nA 100 50 650 50 12.1 10.5 ns ns ns ns mJ mJ 5.5 nF 0.44 0.22 K/W K/W • • • • • Package with DCB ceramic base plate Isolation voltage 3000 V∼ Planar glass passivated chips Low forward voltage drop Leads suitable for PC board soldering UL Release applied Applications • • • • AC and DC motor control AC servo and robot drives Power supplies Welding inverters Advantages • • • • • Easy to mount with four screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Reverse diodes (FRED) Symbol Conditions IF25 IF80 TC = 25°C TC = 80°C 150 100 Symbol Conditions Characteristic Values min. typ. max. VF IF = 75 A; TVJ = 25°C TVJ = 125°C 2.2 1.6 IRM trr IF = 75 A; diF/dt = 750 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V 79 220 A ns with heatsink compound (0.42 K/m.K; 50 µm) 0.9 0.45 K/W K/W RthJC RthJH Maximum Ratings A A 2.5 V V t e e h s r e a t d a n d u l e l t i v t i n t s e a t t m c n te odu elop r p dev Temperature Sensor NTC Symbol R25 B25/50 Module Symbol TVJ Tstg VISOL Md a Symbol dS dA Conditions Characteristic Values min. typ. max. T = 25°C 4.75 Conditions 5.0 3375 5.25 kΩ K Maximum Ratings -40...+125 -40...+150 °C °C IISOL ≤ 1 mA; 50/60 Hz 3000 V~ Mounting torque (M5) 3 26 50 Nm lb.in. m/s 2 Max. allowable acceleration Conditions Characteristic Values min. typ. max. Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) 11.2 11.2 Weight mm mm 86 g Package style and outline Dimensions in mm (1mm = 0.0394“) 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 175 A 150 175 VGE=17V 15V TJ = 25°C 13V IC 125 13V IC 125 11V 100 VGE=17V 15V TJ = 125°C A 150 11V 100 75 75 50 9V 50 9V 25 25 0 0,0 t e e h r s e a t d a n d u l e l t i v t i n t s e a t t m c n p te odu elo pr dev 121T120 0,5 1,0 1,5 2,0 2,5 121T120 0 0,0 3,0 V 0,5 1,0 1,5 2,0 2,5 VCE Fig. 1 Typ. output characteristics 150 IC IF 75 TJ = 125°C TJ = 25°C 200 150 50 100 25 0 300 A 250 TJ = 25°C 100 3,5 V Fig. 2 Typ. output characteristics VCE = 20V 125 A 3,0 VCE 50 121T120 5 6 7 8 9 10 121T120 0 0,5 11 V 1,0 1,5 2,0 2,5 3,0 V 3,5 VF VGE Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 300 120 20 VCE = 600V IC = 75A V A IRM VGE 15 ns trr trr 200 80 10 TJ = 125°C VR = 600V IF = 75A 40 IRM 5 0 121T120 0 100 200 300 QG 400 Fig. 5 Typ. turn on gate charge nC 0 100 121T120 0 200 400 600 800 A/µs 0 1000 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 40 mJ Eon Eon 30 td(on) tr 20 20 ns mJ 120 t 0 100 150 A 400 VCE = 600V VGE = ±15V RG = 15Ω 200 TJ = 125°C 5 0 0 121T120 0 50 100 td(on) VCE = 600V VGE = ±15V IC = 75A TJ = 125°C 20 Eon 15 Eon 5 Fig. 8 Typ. turn off energy and switching times versus collector current 200 25 ns mJ 160 20 t tr 10 0 IC Fig. 7 Typ. turn on energy and switching times versus collector current mJ tf 150 A IC 25 600 t t e e h r s e a t d a n d u l e l t i v t i n t s e a t t m c n te odu elop r p dev 50 ns td(off) 10 80 121T120 800 Eoff Eoff 15 VCE = 600V VGE = ±15V 40 RG = 15Ω TJ = 125°C 10 0 160 Eoff 120 15 80 10 40 5 VCE = 600V VGE = ±15V IC = 75A TJ = 125°C 2000 ns td(off) 1600 t 1200 Eoff 800 400 121T120 0 121T120 0 8 16 24 32 40 0 0 48 Ω 56 0 8 16 24 RG Fig. 9 200 40 0 48 Ω 56 RG Typ. turn on energy and switching times versus gate resistor Fig.10 Typ. turn off energy and switching times versus gate resistor 1 A K/W 0,1 160 ICM ZthJC 120 diode 0,01 RG = 15Ω TJ = 125°C VCEK < VCES 80 0,0001 121T120 0 200 400 600 IGBT 0,001 40 0 32 tf 800 1000 1200 V VCE Fig. 11 Reverse biased safe operating area RBSOA single pulse 0,00001 0,00001 0,0001 VID...125-12P1 0,001 0,01 0,1 s 1 t Fig. 12 Typ. transient thermal impedance 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20