SLIS049 − NOVEMBER 1996 D D D D D Low rDS(on) . . . 0.3 Ω Typ High Output Voltage . . . 60 V Pulsed Current . . . 6 A Per Channel Avalanche Energy Capability . . . 36 mJ Input Transient Protection . . . 2000 V KTA PACKAGE (TOP VIEW) 9 8 7 6 description 5 4 The TPIC2401 is a monolithic power DMOS array that consists of four electrically isolated N-channel enhancement-mode DMOS transistors configured with a common source and open drains. Each transistor features integrated high-current zener diodes to prevent gate damage in the event that an overstress condition occurs. These zener diodes also provide up to 2000 V of ESD protection when tested using the human-body model. 3 2 1 DRAIN4 GATE4 DRAIN3 GATE3 SOURCE/GND GATE2 DRAIN2 GATE1 DRAIN1 The TPIC2401 is offered in a 9-pin PowerFLEX (KTA) package and is characterized for operation over the case temperature range of − 40°C to 125°C. schematic DRAIN1 1 GATE1 GATE2 4 DRAIN2 3 GATE3 6 DRAIN3 7 GATE4 8 DRAIN4 9 2 5 SOURCE/GND NOTE A: For correct operation, no output pin may be taken below GND. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PowerFLEX is a trademark of Texas Intruments Incorporated. Copyright 1996, Texas Instruments Incorporated !"# $"%&! '#( '"! ! $#!! $# )# # #* "# '' +,( '"! $!#- '# #!#&, !&"'# #- && $##( • POST OFFICE BOX 655303 DALLAS, TEXAS 75265 POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443 • 1 SLIS049 − NOVEMBER 1996 absolute maximum ratings over operating case temperature range (unless otherwise noted)† Drain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V Gate-to-source voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −9 V to 18 V Continuous drain current, each output, all outputs on, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 A Pulsed drain current, each output, IOmax, TC = 25°C (see Note 1 and Figure 7) . . . . . . . . . . . . . . . . . . . . 6 A Continuous gate-to-source zener diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 25 mA Pulsed gate-to-source zener diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 250 mA Single-pulse avalanche energy, EAS, TC = 25°C (see Figures 4 and 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 mJ Continuous total power dissipation at (or below) TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7 W Power dissipation at (or below) TC = 75°C, all outputs on . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 W Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 150°C Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1: Pulse duration = 10 ms, duty cycle = 2% electrical characteristics, TC = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN V(BR)DSX VGS(th) Drain-to-source breakdown voltage ID = 250 µA, VGS = 0 60 Gate-to-source threshold voltage 1.5 Gate-to-source threshold voltage matching ID = 1 mA, See Figure 5 VDS = VGS, VGS(th)match V(BR)GS Gate-to-source breakdown voltage IGS = 250 µA V(BR)SG Source-to-gate breakdown voltage ISG = 250 µA ID = 1.5A, See Notes 2 and 3 Drain-to-source on-state voltage VF(SD) Forward on-state voltage, source-to-drain IS = 1.5A, VGS = 0 V, See Notes 2 and 3 and Figure 12 IDSS Zero-gate-voltage drain current VDS = 48 V, VGS = 0 TC = 25°C TC = 125°C IGSSF Forward gate current, drain short circuited to source VGS = 15 V, IGSSR Reverse gate current, drain short circuited to source Static drain-to-source on-state resistance rDS(on) Forward transconductance Ciss Short-circuit input capacitance, common source Coss Short-circuit output capacitance, common source Crss Short-circuit reverse transfer capacitance, common source V 2.05 2.2 5 40 9 V 0.45 0.54 V 0.85 1 V 1 0.5 10 VDS = 0 20 200 nA VSG = 5 V, VDS = 0 10 100 nA VGS = 10 V, ID =1.5 A, See Notes 2 and 3 and Figures 6 and 7 TC = 25°C 0.3 0.36 TC = 125°C 0.48 0.6 VDS = 25 V, f = 1 MHz, • A µA Ω VGS = 0, See Figure 11 POST OFFICE BOX 655303 DALLAS, TEXAS 75265 POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443 • V V 0.9 1.15 S 180 225 100 138 75 100 NOTES: 2. Technique should limit TJ − TC to 10°C maximum. 3. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. 2 UNIT 0.05 VDS = 15 V, ID = 1 A, See Notes 2 and 3 and Figure 9 gfs MAX 18 VGS = 10 V, VDS(on) TYP pF SLIS049 − NOVEMBER 1996 source-to-drain diode characteristics, TC = 25°C PARAMETER trr Reverse-recovery time QRR Total diode charge TEST CONDITIONS MIN IS = 0.75 A, VDS = 48 V, VGS = 0, di/dt = 100 A/µs, See Figures 1 and 14 TYP MAX UNIT 80 ns 180 nC resistive-load switching characteristics, TC = 25°C PARAMETER TEST CONDITIONS MIN TYP td(on) td(off) Delay time, VGS↑ to VDS↓ turn on tr tf Rise time, VDS Qg Total gate charge Qgs(th) Threshold gate-to-source charge Qgd Gate-to-drain charge LD Internal drain inductance 5 LS Rg Internal source inductance 5 MAX UNIT 194 Delay time, VGS↓ to VDS↑ turn off RL = 25 Ω, See Figure 2 VDD = 25 V, tdis = 10 ns, 430 ten = 10 ns, ns 180 Fall time, VDS 90 VDD = 48 V, See Figure 3 ID = 1 A, VGS = 10 V, Internal gate resistance 4 5 0.45 0.56 1.55 1.93 nC nH Ω 500 thermal resistance PARAMETER RθJA RθJC TEST CONDITIONS Junction-to-ambient thermal resistance All outputs with equal power Junction-to-case thermal resistance MIN TYP MAX UNIT 72 All outputs with equal power 5 One output dissipating power 8.5 °C/W C/W NOTES: • POST OFFICE BOX 655303 DALLAS, TEXAS 75265 POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443 • 3 SLIS049 − NOVEMBER 1996 PARAMETER MEASUREMENT INFORMATION 1 0.5 I SD − Source-to-Drain Diode Current − A VDS = 48 V VGS = 0 TJ = 25°C Reverse di/dt = 100 A/µs 0 25% of IRM † −0.5 −1 Shaded Area = QRR −1.5 −2 IRM† −2.5 trr(SD) −3 0 20 40 60 80 100 120 t − Time − ns 140 160 180 200 † IRM = maximum recovery current Figure 1. Reverse-Recovery Current Waveform of Source-to-Drain Diode VDD ten Pulse Generator (see Note A) tdis 90% RL VGS VDS 10 V 90% 10% 0 VGS DUT Rgen 50 Ω td(off) td(on) 50 Ω 90% VDS 10% VOLTAGE WAVEFORMS TEST CIRCUIT NOTE A: The pulse generator has the following characteristics: ten ≤ 10 ns, tdis ≤ 10 ns, ZO = 50 Ω. 4 • POST OFFICE BOX 655303 DALLAS, TEXAS 75265 POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443 • VDS(on) tr tf Figure 2. Resistive Switching VDD SLIS049 − NOVEMBER 1996 PARAMETER MEASUREMENT INFORMATION Current Regulator 12-V Battery 0.2 µF Qg Same Type as DUT 50 kΩ 10 V Qgs(th) 0.3 µF VGS VDD DUT IG = 1 mA 0 Qgd Gate Voltage t − Time − s IG Sampling Resistor ID Sampling Resistor Qgs = Qg − Qgd WAVEFORM TEST CIRCUIT Figure 3. Gate Charge Test Circuit and Waveform 25 V tw 10 V L mH VGS Pulse Generator (see Note A) 50 Ω ID 0 VDS VGS IAS (see Note B) ID DUT 0 Rgen 50 Ω tav V(BR)DSX = 60 V MIN VDS 0 VOLTAGE AND CURRENT WAVEFORMS TEST CIRCUIT NOTES: A. The pulse generator has the following characteristics: tr ≤ 10 ns, tf ≤ 10 ns, ZO = 50 Ω. B. Input pulse duration (tw) is increased until peak current IAS = 1.5 A. I V t av AS (BR)DSX Energy test level is defined as E + + 36 mJ minimum where t av + avalanche time. AS 2 Figure 4. Single-Pulse Avalanche-Energy Test Circuit and Waveforms • POST OFFICE BOX 655303 DALLAS, TEXAS 75265 POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443 • 5 SLIS049 − NOVEMBER 1996 TYPICAL CHARACTERISTICS STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE vs JUNCTION TEMPERATURE r DS(on)− Static Drain-To-Source On-State Resistance − Ω VGS(th) − Gata-To-Source Threshold Voltage − V GATE-TO-SOURCE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 3 VDS = VGS 2.5 2 1 mA 2.5 100 µA 1 1.5 0 −40 −20 0 20 40 60 80 100 120 140 160 Tj − Junction Temperature − °C 1 IO = 2 A 0.9 0.8 0.7 0.6 0.5 0.4 VGS = 10 V 0.3 VGS = 15 V 0.2 0.1 0 −40 −20 0 20 40 60 80 100 120 140 160 TJ − Junction Temperature − °C Figure 6 STATIC DRAIN-TO-SOURCE ON-STATE vs DRAIN CURRENT DRAIN CURRENT vs DRAIN-TO-SOURCE VOLTAGE 1 7 TJ = 25°C VGS = 15 V VGS = 6 V 5 VGS = 5.5 V 4 ∆ VGS = 0.4 V TJ = 25°C Unless Otherwise Noted 3 2 VGS = 4 V 1 0.1 1 VGS = 3.5 V 0 10 0 ID − Drain Current − A 5 6 1 2 3 4 VDS − Drain-To-Source Voltage − V Figure 7 6 VGS = 10 V 6 I D − Drain Current − A r DS(on) − Static Drain-To-Source On-State Resistance − Ω Figure 5 Figure 8 • POST OFFICE BOX 655303 DALLAS, TEXAS 75265 POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443 • 7 SLIS049 − NOVEMBER 1996 TYPICAL CHARACTERISTICS PERCENTAGE OF UNITS vs FORWARD TRANSCONDUCTANCE DRAIN CURRENT vs GATE-TO-SOURCE VOLTAGE 35.9 32.3 28.7 25.1 5 TJ = 40°C I D − Drain Current − A Percentage of Units − % 6 Total Number of Units = 199 VDS = 15 V ID = 1 A TJ = 25°C 21.5 17.9 14.4 10.8 4 TJ = 150°C 3 TJ = 25°C 2 7.2 1 3.6 0 1.108 1.136 1.164 1.192 1.220 1.248 1.276 1.304 1.332 0 0 gfs − Forward Transconductance − S 1 5 6 2 3 4 VGS − Gate-to-Source Voltage − V Figure 9 Figure 10 CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE SOURCE-TO-DRAIN DIODE CURRENT vs SOURCE-TO-DRAIN VOLTAGE 500 350 VGS = 0 I SD − Source-To-Drain Diode Current − A 400 C − Capacitance − pF 10 f = 1 MHz TJ = 25°C Ciss(0) = 220 pF Coss(0) = 350 pF Crss(0) = 195 pF 450 300 250 200 Ciss 150 Coss 100 50 Crss 0 0 4 8 7 12 16 20 24 28 32 36 VDS − Drain-to-Source Voltage − V TJ = 150°C TJ = 25°C 1 TJ = 40°C 0.1 0.1 40 1 10 VSD − Source-To-Drain Voltage − V Figure 11 Figure 12 • POST OFFICE BOX 655303 DALLAS, TEXAS 75265 POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443 • 7 SLIS049 − NOVEMBER 1996 TYPICAL CHARACTERISTICS DRAIN-TO-SOURCE VOLTAGE AND GATE-TO-SOURCE VOLTAGE vs GATE CHARGE 14 ID = 0.75 A TJ = 25°C Q1A, Q1B, Q2A, Q2B 12 50 10 8 40 VDD = 20 V 6 30 VDD = 30 V 4 20 VDD = 48 V 10 trr − Reverse Recovery Time − ns 60 120 VGS − Gate-to-Source Voltage − V 70 VDS − Drain-to-Source Voltage − V REVERSE RECOVERY TIME vs REVERSE di/dt 2 VDS = 48 V VGS = 0 IS = 0.75 A TJ = 25°C See Figure 1 100 80 60 40 20 VDD = 30 V 0 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 0 4 0 50 100 Qg − Gate Charge − nC Figure 13 10 I AS − Maximum Peak Avalanche Current − A 0.5 µs TC = 25°C I D − Maximum Drain Current − A 400 MAXIMUM PEAK AVALANCHE CURRENT vs TIME DURATION OF AVALANCHE 10 1 ms† DC 1 10 ms† ÁÁ ÁÁ ÁÁ DC MAX VDS 1 10 VDS − Drain-to-Source Voltage − V See Figure 4 TC = 25°C TC = 125°C 1 0.01 100 0.1 1 tav − Time Duration of Avalanche − ms Figure 16 Figure 15 8 350 Figure 14 MAXIMUM DRAIN CURRENT vs DRAIN-TO-SOURCE VOLTAGE INFINITE HEATSINK 0.1 0.1 150 200 250 300 Reverse di/dt − A/µs • POST OFFICE BOX 655303 DALLAS, TEXAS 75265 POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443 • 10 SLIS049 − NOVEMBER 1996 THERMAL INFORMATION NORMALIZED TRANSIENT RESISTANCE vs SQUARE-WAVE PULSE DURATION 10 R (t) − Normalized Transient Resistance − Ω TC = 25°C d = 0.2 d = 0.1 d = 0.05 1 d = 0.02 d = 0.01 tc tw ID 0 0.1 0.0001 0.001 0.01 0.1 1 10 tw − Square-Wave Pulse Duration − s † Package mounted in intimate contact with infinite heat sink. NOTE A: ZθJC(t) = r(t) RθJC tw = pulse duration tc = cycle time d = duty cycle = tw / tc Figure 17 • POST OFFICE BOX 655303 DALLAS, TEXAS 75265 POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443 • 9 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment. TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. TI assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using TI components. To minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards. TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right, copyright, mask work right, or other TI intellectual property right relating to any combination, machine, or process in which TI products or services are used. Information published by TI regarding third-party products or services does not constitute a license from TI to use such products or services or a warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the third party, or a license from TI under the patents or other intellectual property of TI. Reproduction of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alteration is an unfair and deceptive business practice. TI is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of TI products or services with statements different from or beyond the parameters stated by TI for that product or service voids all express and any implied warranties for the associated TI product or service and is an unfair and deceptive business practice. TI is not responsible or liable for any such statements. TI products are not authorized for use in safety-critical applications (such as life support) where a failure of the TI product would reasonably be expected to cause severe personal injury or death, unless officers of the parties have executed an agreement specifically governing such use. Buyers represent that they have all necessary expertise in the safety and regulatory ramifications of their applications, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of TI products in such safety-critical applications, notwithstanding any applications-related information or support that may be provided by TI. Further, Buyers must fully indemnify TI and its representatives against any damages arising out of the use of TI products in such safety-critical applications. TI products are neither designed nor intended for use in military/aerospace applications or environments unless the TI products are specifically designated by TI as military-grade or "enhanced plastic." Only products designated by TI as military-grade meet military specifications. Buyers acknowledge and agree that any such use of TI products which TI has not designated as military-grade is solely at the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. TI products are neither designed nor intended for use in automotive applications or environments unless the specific TI products are designated by TI as compliant with ISO/TS 16949 requirements. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, TI will not be responsible for any failure to meet such requirements. Following are URLs where you can obtain information on other Texas Instruments products and application solutions: Products Amplifiers Data Converters DSP Clocks and Timers Interface Logic Power Mgmt Microcontrollers RFID RF/IF and ZigBee® Solutions amplifier.ti.com dataconverter.ti.com dsp.ti.com www.ti.com/clocks interface.ti.com logic.ti.com power.ti.com microcontroller.ti.com www.ti-rfid.com www.ti.com/lprf Applications Audio Automotive Broadband Digital Control Medical Military Optical Networking Security Telephony Video & Imaging Wireless www.ti.com/audio www.ti.com/automotive www.ti.com/broadband www.ti.com/digitalcontrol www.ti.com/medical www.ti.com/military www.ti.com/opticalnetwork www.ti.com/security www.ti.com/telephony www.ti.com/video www.ti.com/wireless Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265 Copyright © 2008, Texas Instruments Incorporated