TI TPIC5203

SLIS040 − SEPTEMBER 1994
•
•
•
•
•
Low rDS(on) . . . 0.26 Ω Typ
High Voltage Output . . . 60 V
Extended ESD Capability . . . 4000 V
Pulsed Current . . . 8 A Per Channel
Fast Commutation Speed
D PACKAGE
(TOP VIEW)
GND
SOURCE1
GATE2
DRAIN2
description
1
8
2
7
3
6
4
5
DRAIN1
GATE1
SOURCE2
NC
NC − No internal connection
The TPIC5203 is a monolithic gate-protected
power DMOS array that consists of two
independent electrically isolated N-channel enhancement-mode DMOS transistors. Each transistor features
integrated high-current zener diodes (ZCXa and ZCXb) to prevent gate damage in the event that an overstress
condition occurs. These zener diodes also provide up to 4000 V of ESD protection when tested using the
human-body model of a 100-pF capacitor in series with a 1.5-kΩ resistor.
The TPIC5203 is offered in a standard eight-pin small-outline surface-mount (D) package and is characterized
for operation over the case temperature range of − 40°C to 125°C.
schematic
DRAIN1
8
GATE2
3
Q1
GATE1
DRAIN2
4
Q2
D1
D2
Z1
7
Z2
ZC1b
ZC2b
ZC1a
ZC2a
2
1
SOURCE1
GND
6
SOURCE2
NOTE: For correct operation, no terminal pin may be taken below GND.
Copyright  1994, Texas Instruments Incorporated
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• DALLAS, TEXAS 75265
• HOUSTON, TEXAS 77251−1443
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2−1
SLIS040 − SEPTEMBER 1994
absolute maximum ratings over operating case temperature range (unless otherwise noted)†
Drain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Source-to-GND voltage (Q1, Q2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Drain-to-GND voltage (Q1, Q2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Gate-to-source voltage range, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −9 V to 18 V
Continuous drain current, each output, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6 A
Continuous source-to-drain diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6 A
Pulsed drain current, each output, Imax, TC = 25°C (see Note 1 and Figure 15) . . . . . . . . . . . . . . . . . . . . . 8 A
Continuous gate-to-source zener diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 50 mA
Pulsed gate-to-source zener-diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 500 mA
Single-pulse avalanche energy, EAS, TC = 25°C (see Figures 4, 15, and 16) . . . . . . . . . . . . . . . . . . . 21.6 mJ
Continuous total dissipation, TC = 25°C (see Figure 15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 962 mW
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 150°C
Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Pulse duration = 10 ms, duty cycle = 2%
2−2
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•
SLIS040 − SEPTEMBER 1994
electrical characteristics, TC = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
V(BR)DSX
Drain-to-source breakdown voltage
VGS(th)
Gate-to-source threshold voltage
V(BR)GS
V(BR)SG
Gate-to-source breakdown voltage
ID = 250 µA,
ID = 1 mA,
See Figure 5
VGS = 0
VDS = VGS,
Source-to-gate breakdown voltage
IGS = 250 µA
ISG = 250 µA
V(BR)
Reverse drain-to-GND breakdown voltage (across
D1, D2)
Drain-to-GND current = 250 µA
VDS(on)
Drain-to-source on-state voltage
ID = 1.6 A,
See Notes 2 and 3
VF(SD)
Forward on-state voltage, source-to-drain
VF
MIN
TYP
MAX
60
1.5
UNIT
V
2.05
2.2
V
18
V
9
V
100
V
VGS = 10 V,
0.42
0.5
V
IS = 1.6 A,
VGS = 0 (Z1, Z2),
See Notes 2 and 3 and Figure 12
1
1.2
V
Forward on-state voltage, GND-to-drain
ID = 1.6 A (D1, D2),
See Notes 2 and 3
5
IDSS
Zero-gate-voltage drain current
VDS = 48 V,
VGS = 0
TC = 25°C
TC = 125°C
IGSSF
Forward-gate current, drain short circuited to
source
VGS = 15 V,
IGSSR
Reverse-gate current, drain short circuited to
source
Ilkg
rDS(on)
V
0.05
1
0.5
10
VDS = 0
20
200
nA
VSG = 5 V,
VDS = 0
10
100
nA
1
VDGND = 48 V
TC = 25°C
TC = 125°C
0.05
Leakage current, drain-to-GND
0.5
10
TC = 25°C
0.26
0.31
Static drain-to-source on-state resistance
VGS = 10 V,
ID = 1.6 A,
See Notes 2 and 3
and Figures 6 and 7
TC = 125°C
0.41
0.45
Forward transconductance
Ciss
Short-circuit input capacitance, common source
Coss
Short-circuit output capacitance, common source
Crss
Short-circuit reverse transfer capacitance, common
source
VDS = 25 V,
f = 1 MHz,
µA
A
Ω
VDS = 15 V,
ID = 800 mA,
See Notes 2 and 3 and Figure 9
gfs
µA
A
1.5
VGS = 0,
See Figure 11
1.83
S
150
275
100
150
40
125
pF
NOTES: 2. Technique should limit TJ − TC to 10°C maximum.
3. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
source-to-drain and GND-to-drain diode characteristics, TC = 25°C
PARAMETER
trr
Reverse-recovery time
QRR
Total diode charge
TEST CONDITIONS
IS = 800 mA,
VGS = 0,
See Figures 1 and 14
VDS = 48 V,
di/dt = 100 A/µs,
•
MIN
Z1 and Z2
50
D1 and D2
265
Z1 and Z2
63
D1 and D2
1240
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•
TYP
MAX
UNIT
ns
nC
2−3
SLIS040 − SEPTEMBER 1994
resistive-load switching characteristics, TC = 25°C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
25
50
27
50
15
30
td(on)
td(off)
Turn-on delay time
tr
tf
Rise time
Qg
Total gate charge
Qgs(th)
Threshold gate-to-source charge
Qgd
Gate-to-drain charge
LD
Internal drain inductance
5
LS
Internal source inductance
5
Rg
Internal gate resistance
Turn-off delay time
RL = 30 Ω,
See Figure 2
VDD = 25 V,
tdis = 10 ns,
ten = 10 ns,
Fall time
VDS = 48 V,
See Figure 3
ID = 0.8 A,
VGS = 10 V,
7
15
4.7
5.9
0.5
0.6
1.9
2.4
UNIT
ns
nC
nH
Ω
0.25
thermal resistance
PARAMETER
TEST CONDITIONS
MIN
TYP
RθJA
Junction-to-ambient thermal resistance
See Notes 4 and 7
130
RθJB
Junction-to-board thermal resistance
See Notes 5 and 7
79
RθJP
Junction-to-pin thermal resistance
See Notes 6 and 7
34
NOTES: 4.
5.
6.
7.
Package mounted on an FR4 printed-circuit board with no heatsink
Package mounted on a 24 inch2, 4-layer FR4 printed-circuit board
Package mounted in intimate contact with infinite heatsink
All outputs with equal power
PARAMETER MEASUREMENT INFORMATION
1.5
I S − Source-to-Drain Diode Current − A
1
Reverse di/dt = 100 A/µs
VDS = 48 V
VGS = 0
TJ = 25°C
Z1 and Z2‡
0.5
0
− 0.5
25% of IRM†
Shaded Area = QRR
−1
− 1.5
−2
IRM†
trr(SD)
− 2.5
0
50
100
150
200 250 300 350 400 450
Time − ns
† IRM = maximum recovery current
‡ The above waveform is representative of D1 and D2 in shape only.
500
Figure 1. Reverse-Recovery-Current Waveform of Source-to-Drain Diode
2−4
•
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•
MAX
UNIT
°C/W
C/W
SLIS040 − SEPTEMBER 1994
PARAMETER MEASUREMENT INFORMATION
VDD = 25 V
RL
Pulse Generator
ten
VDS
10 V
VGS
VGS
0V
DUT
Rgen
tdis
50 Ω
td(on)
CL 30 pF
(see Note A)
50 Ω
td(off)
tr
tf
VDD
VDS
VDS(on)
VOLTAGE WAVEFORMS
TEST CIRCUIT
NOTE A: CL includes probe and jig capacitance.
Figure 2. Resistive-Switching Test Circuit and Voltage Waveforms
Current
Regulator
12-V
Battery
0.2 µF
Same Type
as DUT
50 kΩ
0.3 µF
Qg
10 V
Qgs(th)
VDD
VDS
0V
Qgd
VGS
DUT
IG = 100 µA
Gate Voltage
Time
IG CurrentSampling Resistor
ID CurrentSampling Resistor
VOLTAGE WAVEFORM
TEST CIRCUIT
Figure 3. Gate-Charge Test Circuit and Voltage Waveform
•
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•
2−5
SLIS040 − SEPTEMBER 1994
PARAMETER MEASUREMENT INFORMATION
VDD = 25 V
394 µH
Pulse Generator
(see Note A)
ID
tav
tw
15 V
VGS
VDS
0V
IAS
(see Note B)
VGS
50 Ω
ID
DUT
0V
Rgen
50 Ω
V(BR)DSX = 60 V Min
VDS
0V
VOLTAGE AND CURRENT WAVEFORMS
TEST CIRCUIT
NOTES: A. The pulse generator has the following characteristics: tr ≤ 10 ns, tf ≤ 10 ns, ZO = 50 Ω.
B. Input pulse duration (tw) is increased until peak current IAS = 8 A.
I
V
t av
AS
(BR)DSX
Energy test level is defined as E
+
+ 21.6 mJ.
AS
2
Figure 4. Single-Pulse Avalanche Energy Test Circuit and Waveforms
TYPICAL CHARACTERISTICS
STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE
vs
JUNCTION TEMPERATURE
2.5
0.6
VDS = VGS
ID = 1.6 A
On-State Resistance − Ω
r DS(on) − Static Drain-to-Source
VGS(th) − Gate-to-Source Threshold Voltage − V
GATE-TO-SOURCE THRESHOLD VOLTAGE
vs
JUNCTION TEMPERATURE
2
ID = 1 mA
ID = 100 µA
1.5
1
− 40 − 20
0
20
40
60
VGS = 10 V
0.4
VGS = 15 V
0.2
0
− 40 − 20
80 100 120 140 160
0
Figure 5
2−6
20
40
60
80 100 120 140 160
TJ − Junction Temperature − °C
TJ − Junction Temperature − °C
Figure 6
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•
SLIS040 − SEPTEMBER 1994
TYPICAL CHARACTERISTICS
DRAIN CURRENT
vs
DRAIN-TO-SOURCE VOLTAGE
1
0.9
0.8
0.7
8
nVGS = 0.2 V
TJ = 25°C
(unless otherwise
noted)
VGS
= 10 V
VGS
= 15 V
TJ = 25°C
7
0.6
6
I D − Drain Current − A
On-State Resistance − Ω
r DS(on) − Static Drain-to-Source
STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE
vs
DRAIN CURRENT
0.5
0.4
VGS = 10 V
0.3
VGS = 15 V
0.2
VGS = 5 V
5
4
3
VGS = 4 V
2
1
VGS = 3 V
0.1
0.1
0.2
1
0.4 0.6
2
ID − Drain Current − A
4
6
0
8
0
1
2
3
4
5
6
7
8
9
VDS − Drain-to-Source Voltage − V
Figure 7
Figure 8
DRAIN CURRENT
vs
GATE-TO-SOURCE VOLTAGE
DISTRIBUTION OF
FORWARD TRANSCONDUCTANCE
8
45
7
TJ = 25°C
TJ = 125°C
6
I D − Drain Current − A
35
TJ = 75°C
Total Number of Units = 1040
VDS = 15 V
ID = 0.8 A
TJ = 25°C
30
25
20
15
10
5
4
3
2
TJ = 150°C
5
1
0
0
1.87
1.86
1.85
1.82
1.83
1.84
1.81
TJ = − 40°C
1.72
1.73
1.74
1.75
1.76
1.77
1.78
1.79
1.80
Percentage of Units − %
40
10
0
1
2
3
4
5
6
7
8
9
10
VGS − Gate-to-Source Voltage − V
gfs − Forward Transconductance − S
Figure 9
Figure 10
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•
2−7
SLIS040 − SEPTEMBER 1994
TYPICAL CHARACTERISTICS
SOURCE-TO-DRAIN DIODE CURRENT
vs
SOURCE-TO-DRAIN VOLTAGE
CAPACITANCE
vs
DRAIN-TO-SOURCE VOLTAGE
350
280
245
I SD − Source-to-Drain Diode Current − A
315
Capacitance − pF
8
6
VGS = 0
f = 1 MHz
TJ = 25°C
Ciss(0) = 245 pF
Coss(0) = 3700 pF
Crss(0) = 132 pF
210
175
Ciss
140
Coss
105
70
Crss
35
0
0
4
8
12
16
20
24
28
32
36
VGS = 0
4
2
1
0.6
0.4
TJ = 125°C
TJ = − 40°C
TJ = 150°C
TJ = 25°C
0.2
TJ = 75°C
0.1
0.1
40
VDS − Drain-to-Source Voltage − V
1
VSD − Source-to-Drain Voltage − V
Figure 11
Figure 12
DRAIN-TO-SOURCE VOLTAGE AND
GATE-TO-SOURCE VOLTAGE
vs
GATE CHARGE
8
6
4
20
VDD = 48 V
2
10
VDD = 20 V
0
1
1.5
2
2.5
3
3.5
240
220
200
180
D1 and D2
160
140
120
100
80
60
Z1 and Z2
40
20
0
0.5
trr − Reverse Recovery Time − ns
10
30
0
VDS = 48 V
VGS = 0
IS = 0.8 A
TJ = 25°C
See Figure 1
260
VDD = 20 V
VDD = 30 V
40
280
12
ID = 0.8 A
TJ = 25°C
See Figure 3
50
REVERSE RECOVERY TIME
vs
REVERSE di/dt
VGS − Gate-to-Source Voltage − V
VDS − Drain-to-Source Voltage − V
60
4
4.5
0
5
0
100
Qg − Gate Charge − nC
200
300
400
Reverse di/dt − A/µs
Figure 13
2−8
10
Figure 14
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•
500
600
SLIS040 − SEPTEMBER 1994
THERMAL INFORMATION
MAXIMUM DRAIN CURRENT
vs
DRAIN-TO-SOURCE VOLTAGE
MAXIMUM PEAK AVALANCHE CURRENT
vs
TIME DURATION OF AVALANCHE
10
I AS − Maximum Peak Avalanche Current − A
I D − Maximum Drain Current − A
TC = 25°C
500 µs†
1 ms†
1 µs†
1
10 ms†
ÁÁ
ÁÁ
RθJA§
RθJP‡
DC Condition
0.1
0.1
1
10
VDS − Drain-to-Source Voltage − V
10
9
8
7
See Figure 4
6
5
TC = 25°C
4
3
TC = 125°C
2
1
0.01
100
0.1
1
10
100
tav − Time Duration of Avalanche − ms
† Less than 2% duty cycle
‡ Device mounted in intimate contact with infinite heatsink.
§ Device mounted on FR4 printed circuit board with no heatsink.
Figure 16
Figure 15
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•
2−9
SLIS040 − SEPTEMBER 1994
THERMAL INFORMATION
D PACKAGE†
JUNCTION-TO-BOARD THERMAL RESISTANCE
vs
PULSE DURATION
100
DC Conditions
R θJB − Junction-to-Board Thermal Resistance − ° C/W
d = 0.5
d = 0.2
10
d = 0.1
d = 0.05
d = 0.02
d = 0.01
1
tc
tw
Single Pulse
ID
0
0.1
0.0001
0.001
0.01
0.1
tw − Pulse Duration − s
† Device mounted on 24 in2, 4-layer FR4 printed-circuit board with no heatsink
NOTE A. ZθJB(t) = r(t)RθJB
tw = pulse duration
tc = cycle time
d = duty cycle = tw/tc
Figure 17
2−10
•
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•
1
10
100
PACKAGE OPTION ADDENDUM
www.ti.com
8-Apr-2005
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
TPIC5203D
OBSOLETE
SOIC
D
Pins Package Eco Plan (2)
Qty
8
TBD
Lead/Ball Finish
Call TI
MSL Peak Temp (3)
Call TI
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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Addendum-Page 1
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Following are URLs where you can obtain information on other Texas Instruments products and application solutions:
Products
Applications
Audio
www.ti.com/audio
Communications and Telecom www.ti.com/communications
Amplifiers
amplifier.ti.com
Computers and Peripherals
www.ti.com/computers
Data Converters
dataconverter.ti.com
Consumer Electronics
www.ti.com/consumer-apps
DLP® Products
www.dlp.com
Energy and Lighting
www.ti.com/energy
DSP
dsp.ti.com
Industrial
www.ti.com/industrial
Clocks and Timers
www.ti.com/clocks
Medical
www.ti.com/medical
Interface
interface.ti.com
Security
www.ti.com/security
Logic
logic.ti.com
Space, Avionics and Defense
www.ti.com/space-avionics-defense
Power Mgmt
power.ti.com
Transportation and
Automotive
www.ti.com/automotive
Microcontrollers
microcontroller.ti.com
Video and Imaging
www.ti.com/video
RFID
www.ti-rfid.com
Wireless
www.ti.com/wireless-apps
RF/IF and ZigBee® Solutions
www.ti.com/lprf
TI E2E Community Home Page
e2e.ti.com
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