TI TPIC2202

SLIS017 − SEPTEMBER 1992
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•
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Two 7.5-A Independent Output Channels,
Continuous Current Per Channel
Low rDS(on) . . . 0.09 Ω Typical
Output Voltage . . . 60 V
Pulsed Current . . . 15 A Per Channel
Avalanche Energy . . . 120 mJ
KC PACKAGE
(TOP VIEW)
5
4
3
2
1
DRAIN2
GATE2
SOURCE
DRAIN1
GATE1
The tab is electrically connected to SOURCE.
description
The TPIC2202 is a monolithic power DMOS array
that consists of two independent N-channel
enhancement-mode
DMOS
transistors
connected in a common-source configuration with
open drains.
schematic
DRAIN1
2
DRAIN2
5
1
4
GATE1
GATE2
3
SOURCE
absolute maximum ratings over operating case temperature range (unless otherwise noted)
Drain-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Gate-source voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 20 V
Continuous source-drain diode current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5 A
Pulsed drain current, each output, all outputs on, ID (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 A
Continuous drain current, each output, all outputs on . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5 A
Single-pulse avalanche energy, EAS (see Figure 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 mJ
Continuous power dissipation at (or below) TA = 25°C (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 W
Continuous power dissipation at (or below) TC = 75°C, all outputs on (see Note 2) . . . . . . . . . . . . . . . . 31 W
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 150°C
Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
NOTES: 1. Pulse duration = 10 ms, duty cycle = 6%
2. For operation above 25°C free-air temperature, derate linearly at the rate of 16 mW/°C. For operation above 75°C case temperature,
and with all outputs conducting, derate linearly at the rate of 0.42 W/°C. To avoid exceeding the design maximum virtual junction
temperature, these ratings should not be exceeded.
Copyright  1992, Texas Instruments Incorporated
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• DALLAS, TEXAS 75265
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POST OFFICE BOX 655303
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2−1
SLIS017 − SEPTEMBER 1992
electrical characteristics, TC = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
V(BR)DS
VTGS
Drain-source breakdown voltage
Gate-source threshold voltage
ID = 1 µA,
ID = 1 mA,
VDS(on)
Drain-source on-state voltage
ID = 7.5 A,
VGS = 0
VDS = VGS
VGS = 15 V,
IDSS
Zero-gate-voltage drain current
VDS = 48 V,
VGS = 0
IGSSF
Forward gate current, drain short
circuited to source
VGS = 20 V,
IGSSR
Reverse gate current, drain short
circuited to source
VGS = − 20 V,
rDS(on)
Static drain-source on-state
resistance
VGS = 15 V,
ID = 7.5 A,
See Notes 3 and 4 and Figures 5 and 6
gfs
Forward transconductance
VDS = 15 V,
Ciss
Short-circuit input capacitance,
common source
Coss
Short-circuit output capacitance,
common source
Crss
Short-circuit reverse transfer
capacitance, common source
TYP
MAX
1.75
2.4
V
0.68
0.94
V
60
1.2
See Notes 3 and 4
V
0.07
1
1.3
10
VDS = 0
10
100
nA
VDS = 0
10
100
nA
0.09
0.125
0.15
0.21
ID = 5 A,
TC = 25°C
TC = 125°C
UNIT
TC = 25°C
TC = 125°C
See Notes 3 and 4
2.5
4.7
µA
A
Ω
S
490
VDS = 25 V,
VGS = 0,
285
f = 300 kHz
pF
90
NOTES: 3. Technique should limit TJ − TC to 10°C maximum.
4. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
source-drain diode characteristics, TC = 25°C
PARAMETER
VSD
trr
Forward on voltage
QRR
Total source-drain diode charge
TEST CONDITIONS
IS = 7.5 A,
VDS = 48 V,
Reverse recovery time
VGS = 0,
See Figure 1
MIN
di/dt = 100 A/µs,
A/ s,
TYP
MAX
0.8
1.3
UNIT
V
200
ns
1.5
µC
resistive-load switching characteristics, TC = 25°C
PARAMETER
TEST CONDITIONS
MIN
TYP
td(on)
td(off)
Turn-on delay time
12
Turn-off delay time
100
tr
tf
Rise time
Qg
Total gate charge
RL = 6.7 Ω,
See Figure 2
VDD = 25 V,
tdis = 10 ns,
ten = 10 ns,
MAX
ns
43
Fall time
UNIT
5
VDD = 48 V,
See Figure 3
ID = 2.5 A,
VGS = 10 V,
13.6
18
8.3
11
5.3
7
Qgs
Gate-source charge
Qgd
Gate-drain charge
LD
LS
Internal drain inductance
7
Internal source inductance
7
nC
nH
thermal resistance
PARAMETER
TEST CONDITIONS
RθJA
Junction-to-ambient thermal resistance
RθJC
Junction-to-case thermal resistance
2−2
MAX
UNIT
All outputs with equal power
62.5
°C/W
All outputs with equal power
2.4
°C/W
One output dissipating power
3.3
°C/W
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POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443
•
MIN
TYP
SLIS017 − SEPTEMBER 1992
PARAMETER MEASUREMENT INFORMATION
7.5 A
di/dt = 100 A/µs
QRR = Shaded Area
IS
0
25% of IRM
IRM
(see Note A)
trr
NOTE A: IRM = maximum recovery current
Figure 1. Reverse-Recovery-Current Waveforms of Source-Drain Diode
25 V
ten
VDS
Pulse Generator
tdis
90%
RL
VGS
15 V
90%
10%
VGS
0
DUT
Rgen
50 Ω
td(off)
td(on)
50 Ω
90%
VDS
10%
VDD
VDS(on)
tr
tf
VOLTAGE WAVEFORMS
TEST CIRCUIT
Figure 2. Test Circuit and Voltage Waveforms, Resistive Switching
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2−3
SLIS017 − SEPTEMBER 1992
PARAMETER MEASUREMENT INFORMATION
Current
Regulator
12-V
Battery
0.2 µF
Qg
Same Type
as DUT
50 kΩ
10 V
0.3 µF
Qgd
VGS
VDD = 48 V
DUT
IG = 1 mA
0
Gate Voltage
Time
IG CurrentSampling Resistor
ID CurrentSampling Resistor
Qgs = Qg − Qgd
WAVEFORM
TEST CIRCUIT
Figure 3. Gate Charge Test Circuit and Waveform
25 V
tw
15 V
2.5 mH
VGS
ID
Pulse Generator
50 Ω
0
VDS
VGS
IAS
(see Note B)
ID
DUT
0
Rgen
50 Ω
tav
V(BR)DSX = 60 V MIN
VDS
0
VOLTAGE AND CURRENT WAVEFORMS
TEST CIRCUIT
NOTES: A. The pulse generator has the following characteristics: tr ≤ 10 ns, tf ≤ 10 ns, ZO = 50 Ω.
B. Input pulse duration (tw) is increased until peak current IAS = 7.5 A.
I
V
t av
AS
(BR)DSX
Energy test level is defined as E
+
+ 120 mJ min.
AS
2
Figure 4. Single-Pulse Avalanche Energy Test Circuit and Waveforms
2−4
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•
SLIS017 − SEPTEMBER 1992
TYPICAL CHARACTERISTICS
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
vs
CASE TEMPERATURE
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
vs
DRAIN CURRENT
1
0.30
TC = 25°C
ID = 7.5 A
VGS = 5 V
rDS(on) − Static Drain-Source
On-State Resistance − Ω
r
− Static Drain-Source
DS(on)
On-State Resistance − Ω
0.25
VGS = 5 V
0.20
VGS = 10 V
0.15
0.1
VGS = 15 V
VGS = 10 V
VGS = 15 V
0.1
VGS = 20 V
VGS = 20 V
0.05
0
− 50
0.01
− 25
0
25
50
75
100
3
0
125
TC − Case Temperature − °C
Figure 5
15
Figure 6
DRAIN CURRENT
vs
DRAIN-TO-SOURCE VOLTAGE
DISTRIBUTION OF
FORWARD TRANSCONDUCTANCE
25
15
VGS = 5 V
VGS = 10 V
TC = 25°C
ID = 7.5 A
VDS = 15 V
12
I D − Drain Current − A
20
Percentage of Units − %
6
9
12
ID − Drain Current − A
15
10
TC = 25°C
VGS = 4.5 V
VGS = 4 V
9
VGS = 3.5 V
6
VGS = 3 V
5
3
0
0
4.6
0
4.65
4.7
4.75
4.8
gfs − Forward Transconductance − S
5
10 15 20 25 30 35 40 45
VDS − Drain-to-Source Voltage − V
Figure 7
50
Figure 8
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2−5
SLIS017 − SEPTEMBER 1992
TYPICAL CHARACTERISTICS
GATE-SOURCE THRESHOLD VOLTAGE
vs
CASE TEMPERATURE
SOURCE-DRAIN DIODE CURRENT
vs
SOURCE-DRAIN VOLTAGE
100
ID = 1 mA
1.8
I SD − Source-Drain Diode Current − A
VTGS − Gate-Source Threshold Voltage − V
2
1.6
1.4
1.2
1
0.8
0.6
0.4
10
TC = 125°C
TC = − 40°C
1
TC = 25°C
0.2
0
− 50
0.1
− 25
0
25
50
75
100
0
125
TC − Case Temperature − °C
0.5
1
1.5
VSD − Source-Drain Voltage − V
Figure 9
Figure 10
GATE-SOURCE VOLTAGE
vs
GATE CHARGE
REVERSE RECOVERY TIME
vs
REVERSE di/dt
16
300
ID = 2.5 A
TC = 25°C
TC = 25°C
t rr − Reverse-Recovery Time − ns
14
VGS − Gate-Source Voltage − V
2
12
VDS = 20 V
10
8
6
VDS = 30 V
4
VDS = 48 V
250
200
150
100
50
2
0
0
0
1.5
3
4.5
6
7.5
9
10.5 12 13.5 15
0
100
Q − Gate Charge − nC
300
Reverse di/dt − A/µs
Figure 11
2−6
200
Figure 12
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•
400
500
SLIS017 − SEPTEMBER 1992
TYPICAL CHARACTERISTICS
VDS = 37.5 V
35
V DS − Drain-Source Voltage − V
16
RL = 7.5 Ω
IG = 100 µA
TC = 25°C
14
30
12
Gate-Source
Voltage
VDS = 25 V
25
10
VDS = 37.5 V
20
8
VDS = 25 V
15
6
VDS = 12.5 V
10
4
VGS − Gate-Source Voltage − V
40
2
5
Drain-Source Voltage
0
0
50
100
150
200
250
300
350
400
450
500
t − Time − µs
Figure 13. Resistive Switching Waveforms
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•
2−7
SLIS017 − SEPTEMBER 1992
THERMAL INFORMATION
MAXIMUM PEAK AVALANCHE CURRENT
vs
TIME DURATION OF AVALANCHE
MAXIMUM DRAIN CURRENT
vs
DRAIN-SOURCE VOLTAGE
100
I AS − Maximum Peak Avalanche Current − A
100
I D − Maximum Drain Current − A
TC = 25°C
rDS(on) Limit
15 A
1 ms
10
7.5 A
DC
1
0.1
1
TC = 25°C
TC = 125°C
1
0.01
100
10
10
0.1
tav − Time Duration of Avalanche − ms
VDS − Drain-Source Voltage − V
Figure 14
2−8
1
Figure 15
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•
10
SLIS017 − SEPTEMBER 1992
THERMAL INFORMATION
r(t) − Normalized Transient Resistance
NORMALIZED TRANSIENT THERMAL IMPEDANCE
vs
SQUARE-WAVE PULSE DURATION
1
0.8
0.6
d=1
0.4
0.5
TC = 25°C
0.2
0.2
0.1
0.1
0.08
0.06
0.05
0.04
0.02
tc
Single Pulse
tw
ID
0
0.02
0.01
0.01
0.01
0.1
10
1
100
1000
10000
tw − Pulse Duration − ms
NOTES: ZθJC(t) = r(t) RθJC
t w + pulse duration
t c + period
d + duty cycle + t wńt c
Figure 16
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2−9
2−10
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