RHOMBUS-IND T

T1 Carrier
Transformer
Schematic
Diagram
Turns Ratio ( + 5% )
1CT : 1CT
PARAMETER
MIN.
Open Circuit Inductance
7.4
Sec
UNITS
mH
Leakage Inductance
2.2
µH
Interwinding Capacitance (CW/W)
150
pF
Primary DC Resistance
2.0
ohms
Longitudinal Balance
4 kHz (2-6) or (3-5), 1&4 Grounded
P ri
MAX.
Dielectric Strength
Input Pulse Characteristics:
40
dB
1000
Vdc
Squarewave with Amplitude = 6.0 V
and Pulse Width = 324 ns
Output Pulse Characteristics: Squarewave with Amplitude = 6.0 + 0.5 V
Rise/Fall Time = 150 ns maximum
Droop = 10 % maximum.
0.100 Inch Grid
Physical Dimensions
inches (mm)
Holes for Pins
Holes for Clips
INSULATOR ON BOTTOM
SURFACE OF UNIT
RHOMBUS P/N: T-13926
CUST P/N:
DATE: 9/03/96
Rhombus
Industries Inc.
Transformers & Magnetic Products
www.rhombus-ind.com
NAME:
SHEET:
1 OF 1
15801 Chemical Lane,
Huntington Beach, CA 92649-1595
Phone: (714) 898-0960
FAX: (714) 896-0971