RUICHIPS RU8205G

RU8205G
N-Channel Advanced Power MOSFET
MOSFET
Features
Pin Description
• 20V/6A,
RDS (ON) =21mΩ (Typ.) @ VGS=4.5V
RDS (ON) =30mΩ (Typ.) @ VGS=2.5V
• Super High Dense Cell Design
• Reliable and Rugged
TSSOP-8
• Lead Free and Green Available
Applications
• Power Management
Absolute Maximum Ratings
Symbol
Dual N-Channel MOSFET
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
20
VGSS
Gate-Source Voltage
±12
Maximum Junction Temperature
150
°C
-55 to 150
°C
TA=25°C
1.7
A
TA=25°C
24
TA=25°C
6
TA=70°C
4.5
TA=25°C
1.5
TA=70°C
0.96
TJ
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
V
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
ID
Continuous Drain Current(VGS=4.5V)
PD
RθJA
②
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
Copyright Ruichips Semiconductor Co., Ltd
Rev. B– NOV., 2011
①
A
A
83.5
W
°C/W
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RU8205G
Electrical Characteristics
Symbol
(TA=25°C Unless Otherwise Noted)
Parameter
Test Condition
RU8205G
Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
③
VGS=0V, IDS=250µA
V
20
VDS=20V, VGS=0V
1
TJ=85°C
Gate Threshold Voltage
VDS=VGS, IDS=250µA
Gate Leakage Current
VGS=±10V, VDS=0V
30
0.5
0.7
µA
1.5
V
±100
nA
VGS=4.5V, IDS=6A
21
24
mΩ
VGS=2.5V, IDS=5A
30
40
mΩ
1
V
Drain-Source On-state Resistance
Diode Characteristics
VSD
③
Diode Forward Voltage
ISD=1A, VGS=0V
④
Dynamic Characteristics
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
VGS=0V,VDS=0V,F=1MHz
1.8
VGS=0V,
VDS=10V,
Frequency=1.0MHz
580
Ω
pF
120
95
5
VDD=10V, RL=1.7Ω,
IDS=6A, VGEN=4.5V,
RG=6Ω
Turn-off Fall Time
11
ns
38
13
④
Gate Charge Characteristics
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Notes:
10
VDS=16V, VGS=4.5V,
IDS=6A
1.5
14
nC
3.4
Pulse width limited by safe operating area.
②When mounted on 1 inch square copper board, t ≤10sec.
③Pulse test ; Pulse width≤300µs, duty cycle≤2%.
④Guaranteed by design, not subject to production testing.
Copyright Ruichips Semiconductor Co., Ltd
Rev. B– NOV., 2011
2
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RU8205G
Typical Characteristics
Drain Current
Ptot - Power (W)
ID - Drain Current (A)
Power Dissipation
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
ID - Drain Current (A)
Normalized Effective Transient
Thermal Transient Impedance
VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. B– NOV., 2011
Square Wave Pulse Duration (sec)
3
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RU8205G
Typical Characteristics
Drain-Source On Resistance
ID - Drain Current (A)
RDS(ON) - On Resistance (mΩ)
Output Characteristics
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Gate Threshold Voltage
RDS(ON) - On - Resistance (m)
Normalized Threshold Voltage
Drain-Source On Resistance
VGS - Gate-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. B– NOV., 2011
Tj - Junction Temperature (°C)
4
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RU8205G
Typical Characteristics
Source-Drain Diode Forward
IS - Source Current (A)
Normalized On Resistance
Drain-Source On Resistance
Tj - Junction Temperature (°C)
VSD - Source-Drain Voltage (V)
Gate Charge
C - Capacitance (pF)
VGS - Gate-Source Voltage (V)
Capacitance
VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. B– NOV., 2011
QG - Gate Charge (nC)
5
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RU8205G
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Copyright Ruichips Semiconductor Co., Ltd
Rev. B– NOV., 2011
6
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RU8205G
Ordering and Marking Information
RU8205
Package (Available)
G : TSSOP-8
Operating Temperature Range
C : -55 to 150 ºC
Assembly Material
G : Green & Lead Free
Packaging
T : TUBE
TR : Tape & Reel
Copyright Ruichips Semiconductor Co., Ltd
Rev. B– NOV., 2011
7
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RU8205G
Package Information
TSSOP-8
SYMBOL
MM
INCH
MIN
MAX
MIN
MAX
D
2.900
3.100
0.114
0.122
E
4.300
4.500
0.169
b
0.190
0.300
0.007
c
0.090
0.200
E1
6.250
6.550
A
MM
SYMBOL
INCH
MIN
MAX
MIN
MAX
A2
0.800
1.050
0.031
0.041
0.177
A1
0.050
0.150
0.002
0.006
0.012
e
0.004
0.008
L
0.246
0.258
H
0.047
θ
1.200
0.65 (BSC)
0.500
0.700
0.25(TYP)
0°
8°
0.026 (BSC(
0.020
0.028
0.01(TYP)
0°
8°
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
Copyright Ruichips Semiconductor Co., Ltd
Rev. B– NOV., 2011
8
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RU8205G
Customer Service
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[email protected]
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[email protected]
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Editorial Contact:
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Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: [email protected]
Copyright Ruichips Semiconductor Co., Ltd
Rev. B– NOV., 2011
9
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