SANKEN 2SA1186

2SA1186
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2837)
ICBO
VCB=–150V
–100max
µA
V
IEBO
VEB=–5V
–100max
µA
IC=–25mA
–150min
V
VEBO
–5
V
V(BR)CEO
IC
–10
A
hFE
VCE=–4V, IC=–3A
IB
–2
A
VCE(sat)
IC=–5A, IB=–0.5A
PC
100(Ta=25°C)
W
fT
Tj
150
°C
COB
–55 to +150
°C
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
V
VCE=–12V, IE=1A
60typ
MHz
VCB=–80V, f=1MHz
110typ
pF
VB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
–60
12
–5
5
–500
500
0.25typ
0.8typ
0.2typ
0
–1
0
–2
–3
0
–4
0
–0.5
–1.0
–1.5
(V C E =–4V)
200
Transient Thermal Resistance
DC Curr ent Gain h FE
125˚C
25˚C
100
Typ
50
–5
–1
–10
–30˚C
50
30
–0.02
–0.1
–0.5
f T – I E Characteristics (Typical)
)
p)
emp
p)
eT
Tem
Cas
˚C (
–2
–1
–5
–10
3
1
0.5
0.2
1
10
Collector Current I C (A)
Collector Current I C (A)
100
1000 2000
Time t(ms)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =–12V)
nk
M aximum Pow er Dissipat io n P C (W)
si
Collector-Emitter Voltage V C E (V)
–200
50
at
–100
he
–10
ite
–0.2
–2
fin
Emitter Current I E (A)
10
Without Heatsink
Natural Cooling
In
–0.5
1
C
–1
20
0.1
D
ith
40
–5
W
p
ms
Ty
10
Cut- off F requ ency f T (M H Z )
–10
60
0
0.02
100
–30
80
Collecto r Curren t I C (A)
D C Cur r ent Gai n h F E
–1
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
300
–0.5
0
Base-Emittor Voltage V B E (V)
(V C E =–4V)
–0.1
0
–2.0
Base Current I B (A)
h FE – I C Characteristics (Typical)
20
–0.02
Tem
–2
–5A
Collector-Emitter Voltage V C E (V)
100
–4
–30
I B =–20m A
–2
I C =–10A
–1
se
–40mA
se
–4
–6
(Ca
–60mA
–2
˚C
–8 0m A
–6
1.4
E
–8
125
mA
–120
A
0
–1 0m
Collector Current I C (A)
0
5.45±0.1
C
–10
θ j -a (˚C/W)
–4
–2
0.65 +0.2
-0.1
Weight : Approx 6.0g
a. Type No.
b. Lot No.
–3
Collector-Emitter Saturation Voltage V CE(s a t) (V )
A
m
00
Collector Current I C (A)
–8
0mA
2
3
B
IC
(A)
–16
ø3.2±0.1
5.45±0.1
RL
(Ω)
A
2.0±0.1
1.05 +0.2
-0.1
VCC
(V)
0m
4.8±0.2
b
–2.0max
■Typical Switching Characteristics (Common Emitter)
–10
a
Ca
Tstg
50min∗
C(
–150
25˚
VCEO
15.6±0.4
9.6
1.8
V
–150
5.0±0.2
Unit
2.0
2SA1186
VCBO
External Dimensions MT-100(TO3P)
(Ta=25°C)
Conditions
Unit
4.0
■Electrical Characteristics
Symbol
2SA1186
19.9±0.3
Symbol
4.0max
■Absolute maximum ratings (Ta=25°C)
Application : Audio and General Purpose
20.0min
LAPT
3.5
0
Without Heatsink
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
11