SANKEN 2SA1493_07

2SA1493
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3857)
–200
VCBO
■Electrical Characteristics
Conditions
Ratings
Unit
V
ICBO
VCB=–200V
–100max
µA
VEB=–6V
–100max
µA
IC=–50mA
–200min
V
VCEO
–200
V
IEBO
VEBO
–6
V
V(BR)CEO
IC
–15
A
hFE
VCE=–4V, IC=–5A
50min∗
IB
–5
A
VCE(sat)
IC=–10A, IB=–1A
– 3.0max
V
VCE=–12V, IE=0.5A
20typ
MHz
VCB=–10V, f=1MHz
400typ
pF
PC
150(Tc=25°C)
W
fT
Tj
150
°C
COB
–55 to +150
°C
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
Tstg
External Dimensions MT-200
(Ta=25°C)
Symbol
6.0±0.2
36.4±0.3
24.4±0.2
2.1
2-ø3.2±0.1
9
7
Unit
21.4±0.3
Ratings
a
b
2
4.0max
Symbol
20.0min
■Absolute maximum ratings (Ta=25°C)
Application : Audio and General Purpose
3
5.45±0.1
B
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
–60
12
–5
–10
5
–500
500
0.3typ
0.9typ
0.2typ
0
0
–1
–2
–3
–10A
–5A
0
–4
0
Collector-Emi tter Voltage V C E (V)
200
DC C urrent G ain h FE
100
50
–30˚C
50
20
–0.02
–5 –10 –15
–0.1
–0.5
–1
–5
–10 –15
0.1
1
10
m
C
s
10
0m
s 10ms
s
2000
si
nk
–300
80
at
–100
he
–10
Collector-Emitter Voltage V C E (V)
ite
Without Heatsink
Natural Cooling
fin
–1
120
In
–5
–2
1000
P c – T a Derating
–0.1
10
100
Time t(ms)
ith
Co lle ctor Cu rr ent I C ( A)
D
–10
–0.5
emp)
0.5
W
10
(CaseT
1
160
3m
Typ
1
2
–50
20
20
–2
θ j-a – t Characteristics
Safe Operating Area (Single Pulse)
30
Emitter Current I E (A)
–1
Collector Current I C (A)
(V C E =–12V)
0.1
0
Base-Emittor Voltage V B E (V)
25˚C
100
f T – I E Characteristics (Typical)
0
0.02
0
–4
125˚C
Collector Current I C (A)
Cut- off F re quen cy f T ( MH Z )
DC C urrent G ain h FE
Typ
–1
–3
(V C E =–4V)
300
–0.5
–2
h FE – I C Temperature Characteristics (Typical)
(V C E =–4V)
–0.1
–1
Base Current I B (A)
h FE – I C Characteristics (Typical)
10
–0.02
–5
I C =–15A
–30˚C
–1
eTe
mp)
Temp
)
I B =–5 0m A
–5
–10
Cas
–1 00 mA
–2
(Case
A
˚C (
–200m
–10
125
mA
(V C E =–4V)
25˚C
–400
–15
Collector Current I C (A)
mA
θ j- a (˚C /W )
–
0
60
I C – V BE Temperature Characteristics (Typical)
–3
Transient Thermal Resistance
A
E
Weight : Approx 18.4g
a. Part No.
b. Lot No.
Maximu m Power Dissip ation P C (W)
5A
–1.
Collector Current I C (A)
–1
C
V CE ( sa t ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V )
I C – V CE Characteristics (Typical)
3.0 +0.3
-0.1
5.45±0.1
■Typical Switching Characteristics (Common Emitter)
–15
0.65 +0.2
-0.1
1.05 +0.2
-0.1
40
5
0
Without Heatsink
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
21