2SC3263 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1294) Application : Audio and General Purpose Unit VCB=230V 100max µA VCEO 230 V IEBO VEB=5V 100max µA IC=25mA 230min V VCE=4V, IC=5A 50min∗ ø3.2±0.1 b IB 4 A VCE(sat) IC=5A, IB=0.5A 2.0max V PC 130(Tc=25°C) W fT VCE=12V, IE=–2A 60typ MHz Tj 150 °C COB VCB=10V, f=1MHz 250typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), Y(70 to 140) 2 3 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) 5.45±0.1 5.45±0.1 B VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 60 12 5 10 –5 500 –500 0.30typ 2.40typ 0.50typ 200m A 10 0m A 5 50mA I B =20mA 0 0 1 2 3 2 1 I C =10A 0 4 0 0.5 1.0 1.5 0 2.0 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 200 200 1 5 100 25˚C –30˚C 50 10 0.02 10 15 Transient Thermal Resistance DC C urrent G ain h FE Typ 50 Collector Current I C (A) 0.1 0.5 2 1 5 10 15 θ j-a – t Characteristics 3 1 0.5 0.1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 130 40 10 80 si nk Collector Curr ent I C (A) at Without Heatsink Natural Cooling he 0.5 20 ite 1 fin 40 100 In 60 DC 5 ith Typ s W 10 m Maxim um Power Dissip ation P C (W) 100 Cut- off F req uenc y f T (MH Z ) DC Curr ent Gain h F E 125˚C 0.5 1 Base-Emittor Voltage V B E (V) (V C E =4V) 0.1 0 Base Current I B (A) h FE – I C Characteristics (Typical) 10 0.02 5 5A Collector-Emitter Voltage V C E (V) 100 10 p) 10 eT em p Tem ) p) mA se 400 Ca mA C( Collector Current I C (A) 600 (V C E =4V) 15 3 25˚ A as 1.0 (C 5A 5˚C 1. 12 0A Collector Current I C (A) 3. 2. 1.4 E I C – V BE Temperature Characteristics (Typical) θ j - a (˚ C/W) 0A 15 C Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 Tem Tstg a se hFE (Ca V(BR)CEO A 2.0±0.1 ˚C V 15 4.8±0.2 –30 5 IC 19.9±0.3 VEBO 15.6±0.4 9.6 1.8 Ratings ICBO 5.0±0.2 Conditions V 2.0 Unit 230 4.0 Symbol Ratings VCBO Symbol External Dimensions MT-100(TO3P) (Ta=25°C) 4.0max ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) 20.0min LAPT 50 Without Heatsink 0 –0.02 0.1 –0.1 –1 Emitter Current I E (A) 64 –10 3 10 100 Collector-Emitter Voltage V C E (V) 300 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150