2SA1694 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4467) –10max µA V IEBO VEB=–6V –10max µA –6 V V(BR)CEO –8 A hFE –120min IC=–50mA V 50min∗ VCE=–4V, IC=–3A A VCE(sat) IC=–3A, IB=–0.3A –1.5max V 80(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 300typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 20.0min –3 PC RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) –40 10 –4 –10 5 –0.4 0.4 0.14typ 1.40typ 0.21typ V CE ( s a t ) – I B Characteristics (Typical) I B =–10mA 0 0 –1 –2 –3 –4 –4A 0 (V C E =–4V) 300 100 50 –1 –5 125˚C Transient Thermal Resistance DC Curr ent Gain h FE Typ –0.5 –0.5 25˚C 100 –30˚C 50 30 –0.02 –8 –0.1 –0.5 f T – I E Characteristics (Typical) –1.5 –1 –5 –8 3 1 0.5 0.3 1 10 100 1000 Time t(ms) Collector Current I C (A) Collector Current I C (A) –1.0 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 200 –0.1 0 Base-Emittor Voltage V B E (V) (V C E =–4V) 30 –0.02 0 –0.1 –0.2 –0.3 –0.4 –0.5 –0.6 –0.7 –0.8 –0.9 –1.0 Base Current I B (A) h FE – I C Characteristics (Typical) mp) –2A 0 Collector-Emitter Voltage V C E (V) D C Cur r ent Gai n h F E –2 I C =–8A e Te –1 (Cas –2 –4 –30˚C –25mA –6 mp) –50mA –4 –2 e Te –7 5m A Cas mA ˚C ( –100 –6 (V CE =–4V) 125 5 1.4 E –8 Collector Current I C (A) –1 5.45±0.1 C I C – V BE Temperature Characteristics (Typical) θ j - a ( ˚ C/W) 0 Collector-Emitter Saturation Voltage V C E (s at) (V ) A m 50 Collector Current I C (A) –3 –2 A 0m 0.65 +0.2 -0.1 Weight : Approx 6.0g a. Part No. b. Lot No. –3 A 2 3 B VCC (V) 0m ø3.2±0.1 5.45±0.1 I C – V CE Characteristics (Typical) 2.0±0.1 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) –8 4.8±0.2 b IB Tstg a mp) IC e Te VEBO (Cas –120 15.6±0.4 9.6 25˚C VCEO 19.9±0.3 V 1.8 VCB=–120V –120 5.0±0.2 ICBO VCBO 2.0 Unit Symbol 4.0 Ratings Unit External Dimensions MT-100(TO3P) (Ta=25°C) Conditions Ratings 4.0max ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Symbol Application : Audio and General Purpose Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 80 –20 –5 DC s he 40 at si nk Without Heatsink Natural Cooling ite –0.5 fin –1 60 In 10 100ms ith Co lle ctor Cu rren t I C (A) Typ 20 –10 m W Cut- off F req uency f T (MH Z ) 10 Maxim um Power Dissip ation P C (W) 30 20 Without Heatsink 0 0.02 0.05 0.1 0.5 1 Emitter Current I E (A) 28 5 8 –0.1 –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 3.5 0 0 25 50 75 100 12 5 Ambient Temperature Ta(˚C) 150