2SA1746 LOW VCE (sat) Silicon PNP Epitaxial Planar Transistor V IEBO VEB=–6V –10max µA –6 V V(BR)CEO IC=–25mA –50min V –12(Pulse–20) A hFE 50min VCE=–1V, IC=–5A IB –4 A VCE(sat) IC=–5A, IB=–80mA –0.5max PC 60(Tc=25°C) W VBE(sat) IC=–5A, IB=–80mA –1.2max V Tj 150 °C fT VCE=–12V, IE=1A 25typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 400typ pF 3.3 3.0 V IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –20 4 –5 –10 5 –80 80 0.5typ 0.6typ 0.3typ I B =–10mA –2 0 0 –1 –2 –3 –4 –5 –3A 0 –3 –10 –100 (V C E =–1V) 500 100 Transient Thermal Resistance 125˚C D C Cur r ent Gai n h F E Typ 25˚C –30˚C 100 –5 –1 50 –0.03 –10 Collector Current I C (A) p) ) mp) eTe –0.5 –0.1 –0.5 –1.0 –1.5 –5 –1 –10 θ j-a – t Characteristics 4 1 0.5 0.2 1 10 100 1000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 40 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 500 D C Cur r ent Gai n h F E 0 –1000 Base Current I B (mA) (V C E =–1V) –0.5 em –2 –5A –1A –6 h FE – I C Characteristics (Typical) –0.1 –4 I C =–10A Collector-Emitter Voltage V C E (V) 50 –0.03 –6 (Cas –0.5 –8 –30˚C –4 –1.0 seT –30m A –10 (Ca –6 (V C E =–1V) ˚C –50mA E 125 –8 C Weight : Approx 6.5g a. Part No. b. Lot No. –12 –1.5 θ j - a (˚ C/W) Collector Current I C (A) –70mA 3.35 1.5 I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) –10 Collector-Emitter Saturation Voltage V C E (s a t) (V ) –100 mA 4.4 B V CE ( sat ) – I B Characteristics (Typical) 0.65 +0.2 -0.1 5.45±0.1 1.5 RL (Ω) –12mA 0.8 2.15 1.05 +0.2 -0.1 VCC (V) –12 1.75 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.3±0.2 a b emp Tstg 3.45 ±0.2 seT VEBO 5.5±0.2 (Ca –50 15.6±0.2 25˚C VCEO 0.8±0.2 µA 5.5 –10max V 1.6 VCB=–70V –70 9.5±0.2 ICBO VCBO 23.0±0.3 Unit Symbol External Dimensions FM100(TO3PF) (Ta=25°C) Ratings Unit IC ■Electrical Characteristics Conditions Ratings Symbol 16.2 ■Absolute maximum ratings (Ta=25°C) Application : Chopper Regulator, Switch and General Purpose 60 –30 10 s s at si 20 nk Collector Curre nt I C (A) he Without Heatsink Natural Cooling ite –1 fin 10 40 In 20 –5 ith Cu t-of f Fr eque ncy f T (MH Z ) m Typ W Maxim um Power Dissip ation P C (W) 0µ s 10 1m –10 30 Without Heatsink 0 0.1 1 Emitter C urrent I E (A) 32 10 –0.3 –3 –10 –50 Collector-Emitter Voltage V C E (V) –100 3.5 0 0 25 50 75 100 Ambient Temperature Ta(˚C) 125 150