2SC3835 Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) µA V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 70(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.5A 30typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 110typ pF V 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 50 16.7 3 10 –5 0.3 –0.6 0.5max 3.0max 0.5max I B =10mA 1 0 0 1 2 3 A 2 0 0.005 0.01 0.05 0.1 0.5 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 100 50 1 5 1 2 5 ˚C 25˚ 100 Transient Thermal Resistance DC C urrent G ain h FE Typ C –30 ˚C 50 20 0.01 7 0.05 Collector Current I C (A) 0.1 0.5 1 5 7 20 1 0.5 0.4 10 0µ s he at si nk M aximu m Power Dissip ation P C (W) ite Co lle ctor Cu rre nt I C (A) fin 76 –5 40 30 20 10 Without Heatsink 0.05 –1 In Without Heatsink Natural Cooling 50 ith 0.5 60 W 1 0.1 –0.5 1000 2000 100 P c – T a Derating ms 10 Emitter Current I E (A) 10 70 10 20 –0.05 –0.1 1 Time t(ms) 10 5 ) θ j-a – t Characteristics 5 Safe Operating Area (Single Pulse) (V C E =12V) 30 1.0 1.1 0.5 Collector Current I C (A) f T – I E Characteristics (Typical) Cut-o ff Fr equ ency f T (MH Z ) DC C urrent G ain h FE 300 0 –0.01 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 0 1 Base Current I B (A) 200 mp) 1 4 h FE – I C Characteristics (Typical) 0.1 p) 2 Collector-Emitter Voltage V C E (V) 20 0.02 3 Temp 1 4 Tem 20 mA 5A 3 3A 40m se A 4 5 (Ca 60mA ˚C 5 6 2 125 mA (V C E =4V) 7 I C= 1 Collector Current I C (A) 100 2.6 Collector Current I C (A) 6 1.4 E I C – V BE Temperature Characteristics (Typical) θ j - a (˚ C/W) 1 A 50m C Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) 2 A 00m 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) 7 2 3 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.2±0.1 b IB Tstg a 2.0±0.1 (Case IC 4.8±0.2 –30˚C VEBO 15.6±0.4 9.6 1.8 100max 5.0±0.2 VCB=200V e Te 120 ICBO (Cas VCEO Unit 25˚C V Ratings 2.0 200 External Dimensions MT-100(TO3P) (Ta=25°C) Conditions Symbol 4.0 VCBO ■Electrical Characteristics 19.9±0.3 Unit 4.0max Ratings Symbol 20.0min ■Absolute maximum ratings (Ta=25°C) Application : Humidifier, DC-DC Converter, and General Purpose 5 10 50 120 Collector-Emitter Voltage V C E (V) 200 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150