SANKEN 2SC4131_07

2SC4131
LOW VCE (sat)
Silicon NPN Epitaxial Planar Transistor
V
IEBO
VEB=15V
10max
µA
15
V
V(BR)CEO
50min
V
15(Pulse25)
A
hFE
IC=25mA
60 to 360
VCE=1V, IC=5A
IB
4
A
VCE(sat)
IC=5A, IB=80mA
0.5max
PC
60(Tc=25°C)
W
VBE(sat)
IC=5A, IB=80mA
1.2max
V
Tj
150
°C
fT
VCE=12V, IE=–1A
18typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
210typ
pF
ø3.3±0.2
a
b
3.3
3.0
V
1.75
1.05 +0.2
-0.1
■Typical Switching Characteristics (Common Emitter)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
20
4
5
10
–5
0.08
–0.08
0.5typ
2.0typ
0.4typ
I B =7mA
0
0
2
4
0
0.002
6
0.01
0.1
1
h FE – I C Temperature Characteristics (Typical)
(V C E =1V)
Typ
12 5˚ C
500
2 5 ˚C
– 3 0 ˚C
100
1
70
0.02
10 15
0.1
Collector Current I C (A)
1
10
at
si
20
nk
10
he
5
ite
3
40
fin
Ma ximum Po we r Dissipatio n P C ( W)
s
5
In
10
1000
ith
Collecto r Curr ent I C (A)
0m
Without Heatsink
0.4
5
100
W
DC
s
10
s
m
10
Without Heatsink
Natural Cooling
Collector C urrent I C (A)
0.3
P c – T a Derating
1
1
0.5
60
t on
0.5
1
Time t(ms)
10
tf
90
10 15
1m
0.5
0.1
0.08
0.1
1
3
40
1
1.5
1.0
θ j-a – t Characteristics
Safe Operating Area (Single Pulse)
V C C 20V
I C =5A
I B1 =–I B 2
=80mA
t stg
0.5
Collector Current I C (A)
t on •t stg •t f – I C Characteristics (Typical)
t o n• t s t g • t f (µ s)
Transient Thermal Resistance
D C Cur r ent Gai n h F E
1000
100
Switching Time
D C Cur r ent Gai n h F E
1000
5
0
Base-Emittor Voltage V B E (V)
(V C E =1V)
0.1
0
2
Base Current I B (A)
h FE – I C Characteristics (Typical)
70
0.02
)
5A
3A
I C =1 A
Collector-Emitter Voltage V C E (V)
500
5
10A
mp)
15A
mp
0.5
Te
15mA
4
se
25mA
10
(Ca
8
1.0
˚C
Collector Current I C (A)
40mA
E
(V C E =1V)
125
80mA
12
C
Weight : Approx 2.0g
a. Part No.
b. Lot No.
15
1.3
Collector Current I C (A)
85mA
3.35
1.5
I C – V BE Temperature Characteristics (Typical)
θ j - a ( ˚C/W)
15
4.4
B
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (sa t) (V )
I C – V CE Characteristics (Typical)
0.65 +0.2
-0.1
5.45±0.1
1.5
RL
(Ω)
0.8
2.15
5.45±0.1
VCC
(V)
3.45 ±0.2
e Te
Tstg
5.5±0.2
(Cas
IC
15.6±0.2
–30˚C
VEBO
0.8±0.2
µA
5.5
10max
1.6
VCB=100V
)
50
ICBO
emp
VCEO
Unit
se T
V
Ratings
(Ca
100
External Dimensions FM100(TO3PF)
(Ta=25°C)
Conditions
Symbol
25˚C
VCBO
■Electrical Characteristics
9.5±0.2
Unit
23.0±0.3
Ratings
Symbol
16.2
■Absolute maximum ratings (Ta=25°C)
Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose
50
Collector-Emitter Voltage V C E (V)
100
3.5
0
0
50
100
Ambient Temperature Ta(˚C)
150