2SC4131 LOW VCE (sat) Silicon NPN Epitaxial Planar Transistor V IEBO VEB=15V 10max µA 15 V V(BR)CEO 50min V 15(Pulse25) A hFE IC=25mA 60 to 360 VCE=1V, IC=5A IB 4 A VCE(sat) IC=5A, IB=80mA 0.5max PC 60(Tc=25°C) W VBE(sat) IC=5A, IB=80mA 1.2max V Tj 150 °C fT VCE=12V, IE=–1A 18typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 210typ pF ø3.3±0.2 a b 3.3 3.0 V 1.75 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 20 4 5 10 –5 0.08 –0.08 0.5typ 2.0typ 0.4typ I B =7mA 0 0 2 4 0 0.002 6 0.01 0.1 1 h FE – I C Temperature Characteristics (Typical) (V C E =1V) Typ 12 5˚ C 500 2 5 ˚C – 3 0 ˚C 100 1 70 0.02 10 15 0.1 Collector Current I C (A) 1 10 at si 20 nk 10 he 5 ite 3 40 fin Ma ximum Po we r Dissipatio n P C ( W) s 5 In 10 1000 ith Collecto r Curr ent I C (A) 0m Without Heatsink 0.4 5 100 W DC s 10 s m 10 Without Heatsink Natural Cooling Collector C urrent I C (A) 0.3 P c – T a Derating 1 1 0.5 60 t on 0.5 1 Time t(ms) 10 tf 90 10 15 1m 0.5 0.1 0.08 0.1 1 3 40 1 1.5 1.0 θ j-a – t Characteristics Safe Operating Area (Single Pulse) V C C 20V I C =5A I B1 =–I B 2 =80mA t stg 0.5 Collector Current I C (A) t on •t stg •t f – I C Characteristics (Typical) t o n• t s t g • t f (µ s) Transient Thermal Resistance D C Cur r ent Gai n h F E 1000 100 Switching Time D C Cur r ent Gai n h F E 1000 5 0 Base-Emittor Voltage V B E (V) (V C E =1V) 0.1 0 2 Base Current I B (A) h FE – I C Characteristics (Typical) 70 0.02 ) 5A 3A I C =1 A Collector-Emitter Voltage V C E (V) 500 5 10A mp) 15A mp 0.5 Te 15mA 4 se 25mA 10 (Ca 8 1.0 ˚C Collector Current I C (A) 40mA E (V C E =1V) 125 80mA 12 C Weight : Approx 2.0g a. Part No. b. Lot No. 15 1.3 Collector Current I C (A) 85mA 3.35 1.5 I C – V BE Temperature Characteristics (Typical) θ j - a ( ˚C/W) 15 4.4 B V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 5.45±0.1 1.5 RL (Ω) 0.8 2.15 5.45±0.1 VCC (V) 3.45 ±0.2 e Te Tstg 5.5±0.2 (Cas IC 15.6±0.2 –30˚C VEBO 0.8±0.2 µA 5.5 10max 1.6 VCB=100V ) 50 ICBO emp VCEO Unit se T V Ratings (Ca 100 External Dimensions FM100(TO3PF) (Ta=25°C) Conditions Symbol 25˚C VCBO ■Electrical Characteristics 9.5±0.2 Unit 23.0±0.3 Ratings Symbol 16.2 ■Absolute maximum ratings (Ta=25°C) Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose 50 Collector-Emitter Voltage V C E (V) 100 3.5 0 0 50 100 Ambient Temperature Ta(˚C) 150