SANKEN 2SB1559

(7 0 Ω ) E
2SB1559
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2389)
µA
V
IEBO
VEB=–5V
–100max
µA
–5
V
V(BR)CEO
V
–8
A
hFE
VCEO
–150
VEBO
IC
IC=–30mA
–150min
VCE=–4V, IC=–6A
5000min∗
IB
–1
A
IC=–6A, IB=–6mA
–2.5max
PC
80(Tc=25°C)
W
VBE(sat)
IC=–6A, IB=–6mA
–3.0max
V
Tj
150
°C
fT
VCE=–12V, IE=1A
65typ
MHz
–55 to +150
°C
VCB=–10V, f=1MHz
160typ
pF
COB
a
4.8±0.2
2.0±0.1
ø3.2±0.1
b
VCE(sat)
Tstg
15.6±0.4
9.6
1.8
–100max
V
5.0±0.2
VCB=–160V
–160
2.0
ICBO
VCBO
19.9±0.3
Unit
Symbol
C
External Dimensions MT-100(TO3P)
(Ta=25°C)
2SB1559
Unit
4.0
■Electrical Characteristics
Conditions
2SB1559
Symbol
V
2
4.0max
■Absolute maximum ratings (Ta=25°C)
Equivalent circuit
Application : Audio, Series Regulator and General Purpose
20.0min
Darlington
B
3
1.05 +0.2
-0.1
0.65 +0.2
-0.1
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
5.45±0.1
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
–60
10
–6
–10
5
–6
6
0.7typ
3.6typ
0.9typ
C
1.4
E
Weight : Approx 6.0g
a. Type No.
b. Lot No.
V CE ( sat ) – I B Characteristics (Typical)
I C – V BE Temperature Characteristics (Typical)
0
0
–2
–4
0
–0.2
–6
–0.5 –1
Collector-Emitter Voltage V C E (V)
–5
–10
h FE – I C Temperature Characteristics (Typical)
(V C E =–4V)
40,000
50000
10,000
5,000
–1
–5
–8
Transient Thermal Resistance
Typ
DC C urrent G ain h FE
25˚C
10000
–30˚C
5000
1000
–0.2
–1
–5
–8
1
5
10
C
10
0m
m
s
s
mp)
ite
he
40
at
si
nk
–0.1
fin
Without Heatsink
Natural Cooling
20
In
–1
–0.5
60
ith
Collector Curr ent I C (A)
D
W
–5
40
500 1000 2000
80
–10
60
e Te
50 100
P c – T a Derating
–20
Typ
)
10
Time t(ms)
Safe Operating Area (Single Pulse)
80
Cas
0.5
(V C E =–12V)
100
–3
1
Collector Current I C (A)
f T – I E Characteristics (Typical)
–2
4
0.2
–0.5
Collector Current I C (A)
˚C (
–1
θ j-a – t Characteristics
M aximu m Power Dissipat io n P C (W)
DC C urrent G ain h FE
125˚C
Cu t-of f Fr eque ncy f T (MH Z )
0
Base-Emittor Voltage V B E (V)
(V C E =–4V)
–0.5
0
–50 –100 –200
Base Current I B (mA)
h FE – I C Characteristics (Typical)
2,000
–0.2
p)
–2
emp
–1
–4
–30
–6A
I C =–4A
–6
Tem
I B =–0.3mA
–2
–8A
se
–0.5m A
–4
–2
se T
–0.8m A
(Ca
–1 .0 mA
–6
(V C E =–4V)
–8
–3
(Ca
A
– 1 .5 m
–1. 3m A
25˚C
A
˚C
– 1 .8 m
125
mA
θ j- a (˚ C/W)
–2.0
Collector Current I C (A)
.5
Collector-Emitter Saturation Voltage V C E (s at) (V )
Collector Current I C (A)
–10
–8
–2
mA
m
A
I C – V CE Characteristics (Typical)
5.45±0.1
B
20
Without Heatsink
0
0.02
0.05
0.1
0.5
1
Emitter Current I E (A)
46
5
8
–0.05
–2
–5
–10
–50
–100
Collector-Emitter Voltage V C E (V)
–200
3.5
0
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150