SANKEN 2SC4024_1

2SC4024
High hFE
LOW VCE (sat)
Silicon NPN Epitaxial Planar Transistor
IEBO
VEB=15V
10max
µA
V(BR)CEO
IC=25mA
50min
V
VCE=4V, IC=1A
300 to 1600
3
A
VCE(sat)
IC=5A, IB=0.1A
0.5max
V
PC
35(Tc=25°C)
W
fT
VCE=12V, IE=–0.5A
24typ
MHz
Tj
150
°C
COB
VCB=10V, f=1MHz
150typ
pF
–55 to +150
°C
1.35±0.15
1.35±0.15
2.54
■Typical Switching Characteristics (Common Emitter)
RL
(Ω)
IC
(A)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
20
4
5
0.1
–0.1
0.5typ
2.0typ
0.5typ
5mA
2
0
0
2
4
0.5
10A
6
0.01
0.1
1
(V C E =4V)
Typ
1
5
10
1 2 5 ˚C
500
Transient Thermal Resistance
DC C urrent G ain h FE
1000
25˚C
–30
100
0.02
˚C
0.1
Collector Current I C (A)
0.5
1
5
10
0.5
0.3
1
10
10
10
5
0m
m
s
s
Collector-Emitter Voltage V C E (V)
100
10
nk
50
150x150x2
si
10
at
5
he
3
ite
0.2
–10
20
fin
Without Heatsink
Natural Cooling
In
1
30
ith
DC
0.5
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
s
W
Co lle ctor Cu rre nt I C ( A)
10
–5
1000
P c – T a Derating
Maxim um Power Dissi pation P C (W)
Typ
10
100
Time t(ms)
40
1m
Emitter Current I E (A)
)
1
30
20
1.2
4
Safe Operating Area (Single Pulse)
30
1.0
θ j-a – t Characteristics
(V C E =12V)
–1
0.5
Collector Current I C (A)
f T – I E Characteristics (Typical)
–0.5
0
Base-Emittor Voltage V B E (V)
h FE – I C Temperature Characteristics (Typical)
500
Cut- off Fr equ ency f T (MH Z )
DC C urrent G ain h FE
0
2
Base Current I B (A)
1000
0
–0.05 –0.1
mp
I C= 1 A
(V C E =4V)
0.5
Te
2
5A
0
0.002
h FE – I C Characteristics (Typical)
0.1
4
3A
Collector-Emitter Voltage V C E (V)
100
0.02
6
se
1.0
(Ca
10mA
4
8
˚C
15mA
θ j- a ( ˚ C/W)
Collector Current I C (A)
20m A
6
(V CE =4V)
10
1.5
125
30mA
25mA
I C – V BE Temperature Characteristics (Typical)
Collector Current I C (A)
Collector-Emitter Saturation Voltage V C E (s a t) (V )
I B =35m A
8
Weight : Approx 2.0g
a. Part No.
b. Lot No.
B C E
V CE ( sat ) – I B Characteristics (Typical)
10
2.4±0.2
2.2±0.2
VCC
(V)
I C – V CE Characteristics (Typical)
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
mp)
Tstg
13.0min
IB
ø3.3±0.2
a
b
e Te
hFE
)
A
(Cas
10
emp
IC
–30˚C
V
se T
V
15
4.2±0.2
2.8 c0.5
(Ca
50
VEBO
25˚C
VCEO
10.1±0.2
4.0±0.2
µA
ICBO
0.8±0.2
Unit
10max
V
±0.2
Ratings
VCB=100V
Unit
100
3.9
Conditions
Symbol
Ratings
VCBO
External Dimensions FM20(TO220F)
(Ta=25°C)
8.4±0.2
Symbol
■Electrical Characteristics
16.9±0.3
■Absolute maximum ratings (Ta=25°C)
Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose
100x100x2
50x50x2
2
0
Without Heatsink
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
85