2SC3927 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) V ICBO VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 10(Pulse15) A hFE VCE=4V, IC=5A 10 to 28 5 A VCE(sat) IC=5A, IB=1A 0.5max PC 120(Tc=25°C) W VBE(sat) IC=5A, IB=1A 1.2max V Tj 150 °C fT VCE=12V, IE=–1A 6typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 105typ V pF IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 250 50 5 10 –5 0.75 –1.5 1max 5max 0.5max 0 1 2 3 Collector Current I C (A) – 0.5 1 5 t o n • t s t g• t f ( µ s) 10 1 5 10 t s tg 5 V C C 250V I C :I B1 :–I B 2 =10:1.5:3 1 0.5 t on tf 0.1 0.2 0.5 10 s 1 5 10 ) –55˚C (Case Temp) Temp 0.5 0.1 1 10 100 1000 Time t(ms) P c – T a Derating 120 5 500 Collector-Emitter Voltage V C E (V) 1000 nk 100 si 0.02 50 at Collector-Emitter Voltage V C E (V) 500 600 he 100 ite 0.05 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% fin 0.05 0.1 In Without Heatsink Natural Cooling 1 0.5 100 ith 1 50 1.2 10 0µ 0.5 0.02 10 1.0 1 M aximu m Power Dissipa tion P C (W) s Co lle ctor Cu rr ent I C ( A) 1m 0.8 W Co lle ctor Cu rr ent I C (A) ms 0.6 θ j-a – t Characteristics 20 10 0.4 2 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 20 DC 0.2 Collector Current I C (A) Collector Current I C (A) 0.1 Transient Thermal Resistance –5 5˚ C Swit ching Time DC C urrent G ain h FE 25 ˚C 5 0 Base-Emittor Voltage V B E (V) 10 125˚ C 10 p) 0 10 t on •t stg • t f – I C Characteristics (Typical) 50 0.5 em C (V C E =4V) 0.1 eT ˚C ( 2 ˚ 55 Collector Current I C (A) h FE – I C Characteristics (Typical) 0.05 4 (Case ) mp C 5˚ V C E (sat) 0.05 0.1 Collector-Emitter Voltage V C E (V) 5 0.02 6 Cas ) Temp 12 0 0.02 4 (Case θ j- a (˚ C/W) 0 125˚C 8 125 I B =100mA 2 p) ase Tem 25˚C (C Te 200mA 4 e Temp) –55˚C (Cas se 400m A 6 (V CE =4V) V B E (sat) 1 (C a Collector Current I C (A) 60 0m A 1.4 E 10 ˚C 80 0m A 8 5.45±0.1 C I C – V BE Temperature Characteristics (Typical) (I C /I B =5) 25 1A 0.65 +0.2 -0.1 Weight : Approx 6.0g a. Part No. b. Lot No. V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) 2A 2 3 B RL (Ω) 1. ø3.2±0.1 5.45±0.1 VCC (V) 10 2.0±0.1 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 4.8±0.2 b IB Tstg a 25˚C IC 15.6±0.4 9.6 1.8 Unit 900 5.0±0.2 Unit Ratings 2.0 Ratings VCBO VEBO External Dimensions MT-100(TO3P) (Ta=25°C) Conditions 19.9±0.3 Symbol 4.0 ■Electrical Characteristics 4.0max Symbol 20.0min ■Absolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 50 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 83