2SC3179 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1262) ICBO VCEO 60 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE Symbol Conditions 2SC3179 Unit VCB=80V 100max µA VEB=6V 100max µA IC=25mA 60min V VCE=4V, IC=1V 40min IB 1 A VCE(sat) IC=2A, IB=0.2A 0.6max V PC 30(Tc=25°C) W fT VCE=12V, IE=–0.2A 15typ MHz Tj 150 °C COB VCB=10V, f=1MHz 60typ pF –55 to +150 °C IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 20 10 2 10 –5 200 –200 0.2typ 1.9typ 0.29typ 0 0 1 2 3 0 0.005 0.01 4 0.05 0.1 0.5 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 200 Typ 100 50 1 125˚C 100 25˚C –30˚C 50 20 0.02 4 0.1 f T – I E Characteristics (Typical) 0.5 1 4 ) se Te Te mp mp ) p) 1 (Ca ˚C –30 10 100 1000 Time t(ms) P c – T a Derating 1m s 10 m s 10 he at si nk Without Heatsink Natural Cooling ite 0.5 fin 1 20 In C ith s D W 0m Co lle ctor Cu rren t I C ( A) se 1 30 5 10 1.2 5 0.5 10 30 Typ 1.0 θ j-a – t Characteristics Safe Operating Area (Single Pulse) (V C E =12V) 20 0.8 Collector Current I C (A) Collector Current I C (A) 40 Transient Thermal Resistance DC C urrent G ain h FE D C Cur r ent Gai n h F E 500 0.5 0.6 Base-Emittor Voltage V B E (V) (V C E =4V) Cut- off F req uency f T (M H Z ) 0 0.4 1 Base Current I B (A) h FE – I C Characteristics (Typical) 0.1 em 1 I C =1 A Collector-Emitter Voltage V C E (V) 20 0.01 eT 3A 2A Ca 10mA C( 1 0.5 2 as 20mA 3 (C 30mA 2 1.0 5˚C 40mA 12 3 Collector Current I C (A) 60mA (V CE =4V) 4 θ j- a ( ˚C/W) m 1.4 I C – V BE Temperature Characteristics (Typical) Maximu m Power Di ssip ation P C (W) Collector Current I C (A) 00 A 2.5 Weight : Approx 2.6g a. Type No. b. Lot No. V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) I C – V CE Characteristics (Typical) 4 =1 1.35 B C E RL (Ω) IB b 2.5 VCC (V) 80m 2.0±0.1 0.65 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) A 4.8±0.2 ø3.75±0.2 a 25˚ Tstg 10.2±0.2 3.0±0.2 V 16.0±0.7 Unit 80 8.8±0.2 2SC3179 VCBO Symbol External Dimensions MT-25(TO220) (Ta=25°C) 4.0max ■Electrical Characteristics 12.0min ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 10 Without Heatsink 2 0 –0.005 –0.01 0.2 –0.1 –0.5 –1 Emitter Current I E (A) 62 –4 3 10 50 Collector-Emitter Voltage V C E (V) 100 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150