SavantIC Semiconductor Product Specification 2SC1723 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High breakdown voltage ·High transition frequency APPLICATIONS ·Low frequency high voltage power amplifier ·TV power supply driver PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 5 V 0.2 A 15 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -45~150 TC=25 SavantIC Semiconductor Product Specification 2SC1723 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=8 300 V V(BR)CBO Collector-base breakdown voltage IC=100µA ; IE=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=100µA ; IC=0 5 V Collector-emitter saturation voltage IC=100mA; IB=10mA 0.32 1.5 V VBE Base-emitter on voltage IC=50m A ; VCE=10V 0.66 0.9 V ICBO Collector cut-off current VCB=250V ;IE=0 0.1 µA ICEO Collector cut-off current VCE=250V; RBE=8 2 µA hFE DC current gain IC=50m A ; VCE=10V fT Transition frequency IC=30m A ; VCE=20V 60 MHz COB Output capacitance IE=0 ; VCB=50V; f=1MHz 6.2 pF VCEsat CONDITIONS 2 MIN TYP. 40 MAX UNIT 200 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC1723