SAVANTIC 2SC1723

SavantIC Semiconductor
Product Specification
2SC1723
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·High breakdown voltage
·High transition frequency
APPLICATIONS
·Low frequency high voltage
power amplifier
·TV power supply driver
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
300
V
VCEO
Collector-emitter voltage
Open base
300
V
VEBO
Emitter-base voltage
Open collector
5
V
0.2
A
15
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-45~150
TC=25
SavantIC Semiconductor
Product Specification
2SC1723
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA ; RBE=8
300
V
V(BR)CBO
Collector-base breakdown voltage
IC=100µA ; IE=0
300
V
V(BR)EBO
Emitter-base breakdown voltage
IE=100µA ; IC=0
5
V
Collector-emitter saturation voltage
IC=100mA; IB=10mA
0.32
1.5
V
VBE
Base-emitter on voltage
IC=50m A ; VCE=10V
0.66
0.9
V
ICBO
Collector cut-off current
VCB=250V ;IE=0
0.1
µA
ICEO
Collector cut-off current
VCE=250V; RBE=8
2
µA
hFE
DC current gain
IC=50m A ; VCE=10V
fT
Transition frequency
IC=30m A ; VCE=20V
60
MHz
COB
Output capacitance
IE=0 ; VCB=50V; f=1MHz
6.2
pF
VCEsat
CONDITIONS
2
MIN
TYP.
40
MAX
UNIT
200
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
2SC1723