SAVANTIC 2SC1846

SavantIC Semiconductor
Product Specification
2SC1846
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type 2SA885
·Low collector saturation
APPLICATIONS
·For medium output power amplification
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute Maximun Ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
45
V
VCEO
Collector-emitter voltage
Open base
35
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current (DC)
1
A
ICM
Collector current-peak
1.5
A
1
1.2*
PC
Collector power dissipation
TC=25
W
2
5*
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
Note) *1: Without heat sink
*2: With a 100 × 100 × 2 mm A1 heat sink
SavantIC Semiconductor
Product Specification
2SC1846
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=2mA;IB=0
35
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
45
V
VCEsat
Collector-emitter saturation voltage
IC=0.5A ;IB=50mA
0.5
V
ICBO
Collector cut-off current
VCB=20V; IE=0
0.1
µA
ICEO
Collector cut-off current
VCE=20V; IB=0
100
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
µA
hFE-1
DC current gain
IC=0.5A ; VCE=10V
85
hFE-2
DC current gain
IC=1A ; VCE=5V
50
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=50mA ; VCB=10V,f=200MHz
hFE-1 Classifications
Q
R
S
85-170
120-240
170-340
2
MIN
TYP.
MAX
UNIT
340
20
200
pF
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SC1846
SavantIC Semiconductor
Product Specification
2SC1846
Silicon NPN Power Transistors
4