SAVANTIC 2SC3540

SavantIC Semiconductor
Product Specification
2SC3540
Silicon NPN Power Transistors
DESCRIPTION
With TO-220Fa package
·Low collector saturation voltage
·High speed switching time
·Complement to type 2SA1388
·
APPLICATIONS
·High current switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
80
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current (DC)
5
A
ICM
Collector current-peak
8
A
IB
Base current (DC)
1
A
PC
Collector power dissipation
Ta=25
2
TC=25
25
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SC3540
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=3A ;IB=0.15A
0.2
0.4
V
VBEsat
Base-emitter saturation voltage
IC=3A ;IB=0.15A
0.9
1.2
V
ICBO
Collector cut-off current
VCB=100V; IE=0
1
µA
IEBO
Emitter cut-off current
VEB=7V; IC=0
1
µA
hFE-1
DC current gain
IC=1A ; VCE=1V
70
hFE-2
DC current gain
IC=3A ; VCE=1V
40
Trainsition frequency
IC=1A ; VCE=4V
120
MHz
Collector output capacitance
IE=0 ; VCE=10V;f=1MHz
80
pF
0.2
µs
1.0
µs
0.1
µs
fT
Cob
CONDITIONS
MIN
TYP.
MAX
80
UNIT
V
240
Switching times
ton
Turn-on time
tstg
Storage time
IB1=-IB2=0.15A
VCC@30V;RL=10A
Fall time
tf
hFE-1 Classifications
O
Y
70-140
120-240
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
2SC3540
SavantIC Semiconductor
Product Specification
2SC3540
Silicon NPN Power Transistors
4