SavantIC Semiconductor Product Specification 2SC3540 Silicon NPN Power Transistors DESCRIPTION With TO-220Fa package ·Low collector saturation voltage ·High speed switching time ·Complement to type 2SA1388 · APPLICATIONS ·High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 5 A ICM Collector current-peak 8 A IB Base current (DC) 1 A PC Collector power dissipation Ta=25 2 TC=25 25 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC3540 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.15A 0.2 0.4 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.15A 0.9 1.2 V ICBO Collector cut-off current VCB=100V; IE=0 1 µA IEBO Emitter cut-off current VEB=7V; IC=0 1 µA hFE-1 DC current gain IC=1A ; VCE=1V 70 hFE-2 DC current gain IC=3A ; VCE=1V 40 Trainsition frequency IC=1A ; VCE=4V 120 MHz Collector output capacitance IE=0 ; VCE=10V;f=1MHz 80 pF 0.2 µs 1.0 µs 0.1 µs fT Cob CONDITIONS MIN TYP. MAX 80 UNIT V 240 Switching times ton Turn-on time tstg Storage time IB1=-IB2=0.15A VCC@30V;RL=10A Fall time tf hFE-1 Classifications O Y 70-140 120-240 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 2SC3540 SavantIC Semiconductor Product Specification 2SC3540 Silicon NPN Power Transistors 4