SavantIC Semiconductor Product Specification 2SD1115K Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·DARLINGTON APPLICATIONS ·For high voltage switching and ignitor applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 400 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A ICM Collector current-Peak 6 A PT Total power dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD1115K Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=2A ; PW=50µs f=50Hz, L=10mH 300 V VCBO Collector-base breakdown voltage IC=0.1A ,IE=0 400 V VEBO Emitter-base breakdown voltage IE=50mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=2A; IB=20mA 1.5 V VBEsat Base-emitter saturation voltage IC=2A; IB=20mA 2.0 V ICEO Collector cut-off current VCE=300V; RBE=A 0.1 mA hFE DC current gain IC=2A ; VCE=2V 500 Switching times ton Turn-on time toff Turn-off time 1.0 µs 22 µs IC=2A;IB1=- IB2=20mA 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 2SD1115K