SavantIC Semiconductor Product Specification 2SD1276 2SD1276A Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·Complement to type 2SB950/950A ·High DC current gain ·High-speed switching APPLICATIONS ·For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS 2SD1276 VCBO 60 Open base 2SD1276A VEBO Emitter-base voltage IC V 80 2SD1276 Collector-emitter voltage UNIT 60 Open emitter Collector-base voltage 2SD1276A VCEO VALUE V 80 Open collector 5 V Collector current (DC) 4 A ICM Collector current-Peak 8 A PC Collector power dissipation TC=25 40 Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD1276 2SD1276A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SD1276 MIN TYP. MAX UNIT 60 IC=30mA , IB=0 2SD1276A V 80 VCEsat-1 Collector-emitter saturation voltage IC=3A ;IB=12mA 2 V VCEsat- Collector-emitter saturation voltage IC=5A ;IB=20mA 4 V VBE Base-emitter voltage VCE=3V; IC=3A 2.5 V ICBO Collector cut-off current 0.2 mA 0.5 mA 2 mA Collector cut-off current ICEO 2SD1276 VCB=60V ;IE=0 2SD1276A VCB=80V; IE=0 2SD1276 VCE=30V; IB=0 2SD1276A VCE=40V; IB=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=3A ; VCE=0.5V 1000 hFE-2 DC current gain IC=3A ; VCE=3V 2000 Transition frequency IC=0.5A; VCE=10V;f=1MHz fT 10000 20 MHz 0.5 µs 4 µs 1 µs Switching times ton Turn-on time ts Storage time tf Fall time IC=2A ;IB1=8mA IB2=-8mA;VCC=50V hFE-2 Classifications Q R 2000-5000 4000-10000 2 SavantIC Semiconductor Product Specification 2SD1276 2SD1276A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3