Inchange Semiconductor Product Specification 2SB816 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SD1046 ・Wide area of safe operation APPLICATIONS ・For LF Power Amplifier, 50W Output Large Power Switching Applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -8 A ICP Collector current-peak -12 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -40~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB816 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;RBE=∞ -120 V V(BR)CBO Collector-base breakdown voltage IC=-5mA ;IE=0 -150 V V(BR)EBO Emitter-base breakdown voltage IE=-5mA ;IC=0 -6 V Collector-emitter saturation voltage IC=-5A; IB=-0.5A VBE Base-emitter on voltage ICBO VCEsat CONDITIONS MIN TYP. UNIT -2.0 V IC=-1A;VCE=-5V -1.5 V Collector cut-off current VCB=-80V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-4V; IC=0 -0.1 mA hFE-1 DC current gain IC=-1A ; VCE=-5V 60 hFE-2 DC current gain IC=-5A ; VCE=-5V 20 Transition frequency IC=-1A ; VCE=-5V 15 MHz Collector output capacitance f=1MHz;VCB=-10V 220 pF 0.22 μs 0.93 μs 0.37 μs fT COB -1.0 MAX 200 Switching times ton Turn-on time tstg Storage time tf IC=-1.0A ;IB1=-IB2=-0.1A VCC=20V;RL=20Ω Fall time hFE-1 Classifications D E 60-120 100-200 2 Inchange Semiconductor Product Specification 2SB816 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification 2SB816 Silicon PNP Power Transistors 4