SavantIC Semiconductor Product Specification MJE180/181/182 Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type MJE170/171/172 APPLICATIONS ·For low power audio amplifier and low current high speed switching applications PINNING (see Fig.2) PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS MJE180 VCBO VCEO Collector-base voltage Collector-emitter voltage MJE181 Open emitter Emitter-base voltage 80 MJE182 100 MJE180 40 MJE181 UNIT 60 Open base MJE182 VEBO VALUE 60 V V 80 Open collector 7 V IC Collector current 3 A ICM Collector current-peak 6 A IB Base current 1 A PC Collector power dissipation Ta=25 1.5 TC=25 12.5 W Ti Junction temperature 150 Tstg Storage temperature -65~150 SavantIC Semiconductor Product Specification MJE180/181/182 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MJE180 V(BR)CEO Collector-emitter breakdown voltage MJE181 MIN TYP. MAX UNIT 40 IC=10mA;IB=0 MJE182 V 60 80 VCE(sat)-1 Collector-emitter saturation voltage IC=500mA ;IB=50mA 0.3 V VCE(sat)-2 Collector-emitter saturation voltage IC=1.5A ;IB=150mA 0.9 V VCE(sat)-3 Collector-emitter saturation voltage IC=3A ;IB=600mA 1.7 V VBE(sat)-1 Base-emitter saturation voltage IC=1.5A ;IB=150mA 1.5 V VBE(sat)-2 Base-emitter saturation voltage IC=3A ;IB=600mA 2.0 V Base-emitter on voltage IC=500mA ; VCE=1V 1.2 V MJE180 VCB=60V; IE=0 TC=150 0.1 0.1 µA mA MJE181 VCB=80V; IE=0 TC=150 0.1 0.1 µA mA MJE182 VCB=100V; IE=0 TC=150 0.1 0.1 µA mA 0.1 µA VBE ICBO Collector cut-off current IEBO Emitter cut-off current VEB=7V; IC=0 hFE-1 DC current gain IC=100mA ; VCE=1V 50 hFE-2 DC current gain IC=500mA ; VCE=1V 30 hFE-3 DC current gain IC=1.5A ; VCE=1V 12 fT Transition frequency IC=100mA ; VCE=10V 50 COB Output capacitance IE=0 ; VCB=10V,f=0.1MHz 2 250 MHz 30 pF SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 MJE180/181/182