2N4400 0.6 A, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES General Purpose Amplifier Transistor TO-92 G Emitter Base Collector H J A D Collector REF. B A B C D E F G H J K K Base E C F Emitter Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 40 V Emitter to Base Voltage VEBO 6 V Collector Current - Continuous IC 0.6 A Collector Power Dissipation PC 625 mW RθJA 200 °C / W TJ, TSTG 150, -55~150 °C Thermal resistance, junction to ambient Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test Condition Collector to Base Breakdown Voltage V(BR)CBO 60 - - V IC= 0.1mA, IE = 0A Collector to Emitter Breakdown Voltage V(BR)CEO * 40 - - V IC= 1mA, IB = 0A Emitter to Base Breakdown Voltage V(BR)EBO 6 - - V IE= 0.1mA, IC = 0A Collector Cut-Off Current ICBO - - 0.1 μA VCB= 60V, IE = 0 A Emitter Cut-Off Current IEBO μA DC Current Gain hFE * Collector to Emitter Saturation Voltage VCE(sat) * Base to Emitter Saturation Voltage VBE(sat) * - - 0.1 20 - - VEB= 6V, IC =0 mA 40 - - VCE= 1V, IC= 10mA 50 - 150 VCE= 1V, IC= 150mA 20 - - VCE= 2V, IC= 500mA - - 0.4 - - 0.75 0.75 - 0.95 - - 1.2 VCE= 1V, IC= 1mA V V IC= 150mA, IB= 15mA IC= 500mA, IB= 50mA IC= 150mA, IB=15mA IC= 500mA, IB= 50mA Collector output Capacitance Cob - - 6.5 pF VCB = 5V, IE = 0A, f=1MHz Emitter input Capacitance Cib - - 30 pF VEB = 5V, IC = 0A, f=1MHz Transition Frequency fT * 200 - - MHz VCE = 10V, IC = 20mA, f=100MHz *Pulse test：Pulse Width ≦ 300 μs, Duty Cycle ≦ 2.0%. http://www.SeCoSGmbH.com/ 29-Dec-2010 Rev. A Any changes of specification will not be informed individually. Page 1 of 1