SECOS 3DD13005

3DD13005
4A , 700V
NPN Plastic-Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of ā€œ-Cā€ specifies halogen & lead-free
FEATURES
TO-220J
Power switching applications
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
Rating
Unit
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
700
400
9
4
2
150, -55~150
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut ā€“ Off Current
Emitter Cut ā€“ Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Fall time
Storage time
http://www.SeCoSGmbH.com/
2-Nov-2011 Rev. A
Symbol
Min.
Typ.
Max.
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
700
400
9
20
5
5
1.8
-
1
0.1
0.05
30
0.3
0.8
1.6
0.6
6.6
V
V
V
hFE
VCE(sat)1
VCE(sat)2
VBE(sat)
fT
tF
tS
mA
mA
V
V
V
MHz
µs
µs
Test Condition
IC=1mA, IE=0
IC=10mA, IB=0
IE=1mA, IC=0
VCB=700V, IE=0
VCE=400V, IB=0
VEB=7V, IC=0
VCE=5V, IC=1A
VCE=5V, IC=10mA
IC=1A, IB=0.2A
IC=4A, IB=1A
IC=2A, IB=0.5A
VCE=10V, IC=500mA, f =1MHz
IB1= -IB2=0.4A, IC=2A, VCC=120V
IC=0.25A
Any changes of specification will not be informed individually.
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