2SA1201

2SA1201
PNP Silicon
Elektronische Bauelemente
Epitaxial Planar Transistor
RoHS Compliant Product
SOT-89
FEATURES
z
High voltage
z
High transition frequency
z
Complementary to 2SC2881
E
C
B
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
-5
V
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
-0.8
A
PC
Collector Power Dissipation
0.5
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5
TYP.
0.70 REF.
REF.
G
H
I
J
K
L
M
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=-1mA,IE=0
-120
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-10mA,IB=0
-120
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-1mA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-120V,IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-0.1
μA
DC current gain
hFE
VCE=-5V,IC=-100mA
Collector-emitter saturation voltage
VCE(sat)
-1
V
-1
V
VBE
VCE=-5V,IC=-500mA
Transition frequency
fT
VCE=-5V,IC=-100mA
CLASSIFICATION OF
Rank
Range
Marking
http://www.SeCoSGmbH.com
08-May-2007 Rev. A
Cob
240
IC=-500mA,IB=-50mA
Base-emitter voltage
Collector output capacitance
80
120
VCB=-10V,IE=0,f=1MHz
MHz
30
pF
hFE
O
Y
80-160
120-240
DO
DY
Any changing of specification will not be informed individual
Page 1 of 2
2SA1201
PNP Silicon
Elektronische Bauelemente
Epitaxial Planar Transistor
Typical Characteristics
http://www.SeCoSGmbH.com
08-May-2007 Rev. A
Any changing of specification will not be informed individual
Page 2 of 2