2SA1201 PNP Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-89 FEATURES z High voltage z High transition frequency z Complementary to 2SC2881 E C B MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V -5 V VEBO Emitter-Base Voltage IC Collector Current -Continuous -0.8 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. REF. G H I J K L M ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -120 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -120 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-120V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA DC current gain hFE VCE=-5V,IC=-100mA Collector-emitter saturation voltage VCE(sat) -1 V -1 V VBE VCE=-5V,IC=-500mA Transition frequency fT VCE=-5V,IC=-100mA CLASSIFICATION OF Rank Range Marking http://www.SeCoSGmbH.com 08-May-2007 Rev. A Cob 240 IC=-500mA,IB=-50mA Base-emitter voltage Collector output capacitance 80 120 VCB=-10V,IE=0,f=1MHz MHz 30 pF hFE O Y 80-160 120-240 DO DY Any changing of specification will not be informed individual Page 1 of 2 2SA1201 PNP Silicon Elektronische Bauelemente Epitaxial Planar Transistor Typical Characteristics http://www.SeCoSGmbH.com 08-May-2007 Rev. A Any changing of specification will not be informed individual Page 2 of 2