STC1015 PNP Silicon Transistor STC1015 (Ta=25°°C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -60 V Collector-Emitter voltage VCEO -50 V Emitter-Base voltage VEBO -5 V Collector current IC -150 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C (Ta=25°°C) Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-50µA, IE=0 -60 - - V Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -50 - - V Emitter-Base breakdown voltage BVEBO IE=-50µA, IC=0 -5 - - V Collector cut-off current ICBO VCB=-50V, IE=0 - - -0.1 µA Emitter cut-off current IEBO VEB=-5V, IC=0 - - -0.1 µA DC current gain h VCE=-6V, IC=-2mA 70 - 700 - - - -0.3 V 80 - - MHz Collector-Emitter saturation voltage Transition frequency * FE VCE(sat) fT IC=-100mA, IB=-10mA VCE=-10V, IC=-1mA Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz - 4 7 pF Noise figure NF VCE=-6V, IC=-0.1mA f=1KHz, Rg=10K1 - - 10 dB *: hFE rank / A : 70~140, B : 120~240, C : 200~400, D : 300~700. 2 STC1015 Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 3 IC-VCE Fig. 2 IC-VBE Fig. 4 hFE-IC Fig. 5 VCE(sat)-IC 3