TYSEMI BC847PN

Transistors
IC
SMD Type
Product specification
BC847PN
■ Features
SOT-363
● Two internal isolated NPN/PNP Transistors in one package
Unit: mm
+0.1
-0.1
1.3
4
2
3
E2
+0.1
0.3-0.1
+0.1
2.1-0.1
+0.05
0.1-0.02
+0.05
0.95-0.05
B2
0.1max
1
C1
0.36
+0.15
2.3-0.15
5
+0.1
1.25-0.1
6
● Ultra-Small Surface Mount Package
0.525
0.65
● For Switching and AF Amplifier Applications
E1
B1
C2
1 E1
4 E2
2 B1
5 B2
3 C2
6 C1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCBO
45
V
Emitter-Base Voltage
VEBO
6
V
Collector Current -Continuous
IC
0.1
A
Collector Power Dissipation
PC
200
mW
Junction Temperature
TJ
150
℃
Storage Temperature
Tstg
-55 to +150
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC = 10μA , IE = 0
50
V
Collector-emitter breakdown voltage
V(BR)CEO IC = 10mA , IB = 0
45
V
Emitter-base Breakdown voltage
V(BR)EBO IE = 10 μA , IC = 0
6
V
Collector-base cutoff current
ICBO
VCB = 30 V , IE = 0
15
nA
Emitter-base cutoff current
IEBO
VEB = 5 V , IC = 0
15
nA
DC current gain
hFE
VCE = 5 V , IC = 2 mA
Collector-emitter saturation voltage
VCE(sat) IC = 100 mA , IB = 5mA
Base-emitter saturation voltage
VBE(sat) IC = 100 mA , IB = 5mA
Collector output capacitance
Cob
200
450
0.6
0.9
VCB=10V,f=1MHz
6
Transition frequency
fT
VCE = 5 V , IC = 10 mA ,
100
f = 100 MHz
Noise figure
NF
VCE=5V,IC=0.2mA,f=1kHz,
Rg=2KΩ,Δf=200Hz
V
V
pF
MHz
10
dB
■ Marking
Marking
7P
http://www.twtysemi.com
[email protected]
4008-318-123
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