Transistors IC SMD Type Product specification BC847PN ■ Features SOT-363 ● Two internal isolated NPN/PNP Transistors in one package Unit: mm +0.1 -0.1 1.3 4 2 3 E2 +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 +0.05 0.95-0.05 B2 0.1max 1 C1 0.36 +0.15 2.3-0.15 5 +0.1 1.25-0.1 6 ● Ultra-Small Surface Mount Package 0.525 0.65 ● For Switching and AF Amplifier Applications E1 B1 C2 1 E1 4 E2 2 B1 5 B2 3 C2 6 C1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCBO 45 V Emitter-Base Voltage VEBO 6 V Collector Current -Continuous IC 0.1 A Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 ℃ Storage Temperature Tstg -55 to +150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC = 10μA , IE = 0 50 V Collector-emitter breakdown voltage V(BR)CEO IC = 10mA , IB = 0 45 V Emitter-base Breakdown voltage V(BR)EBO IE = 10 μA , IC = 0 6 V Collector-base cutoff current ICBO VCB = 30 V , IE = 0 15 nA Emitter-base cutoff current IEBO VEB = 5 V , IC = 0 15 nA DC current gain hFE VCE = 5 V , IC = 2 mA Collector-emitter saturation voltage VCE(sat) IC = 100 mA , IB = 5mA Base-emitter saturation voltage VBE(sat) IC = 100 mA , IB = 5mA Collector output capacitance Cob 200 450 0.6 0.9 VCB=10V,f=1MHz 6 Transition frequency fT VCE = 5 V , IC = 10 mA , 100 f = 100 MHz Noise figure NF VCE=5V,IC=0.2mA,f=1kHz, Rg=2KΩ,Δf=200Hz V V pF MHz 10 dB ■ Marking Marking 7P http://www.twtysemi.com [email protected] 4008-318-123 1 of 1