SECOS BCP1213

BCP1213
PNP
Epitaxial Planar Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-89
The BCP1213 is designed for using in power amplifier applications
or power switching applications.
A
E
C
MARKING
B
NY
Type Name
D
hFE Ranking
F
G
H
Millimeter
J
Min.
Max.
4.40
4.60
4.05
4.25
1.40
1.60
2.40
2.60
1.50
1.70
0.89
1.20
REF.
A
B
C
D
E
F
K
REF.
G
H
J
K
L
L
Millimeter
Min.
Max.
1.50 REF.
3.00 REF.
0.40
0.52
0.35
0.41
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Symbol
Ratings
Unit
VCBO
VCEO
VEBO
IC
IB
-50
-50
-5
-2
-0.4
500
1000
150, -55~150
V
V
V
A
A
mW
mW
°C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
PC (Note 1)
Junction & Storage Temperature
TJ, TSTG
2
Note 1: Mounted on ceramic substrate (250mm x0.8t)
ELECTRICAL CHARACTERISTICS at Ta = 25°C
Parameter
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain.
Base-emitter voltage
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Switching time
Symbol
Min.
Max.
Unit
V(BR)CEO
ICBO
IEBO
hFE(1)
hFE(2)
VBE(sat)
VCE(sat)
fT
COB
-50
70
20
-
-100
-100
240
-1.2
-0.5
V
nA
nA
120 TYP.
40
V
V
MHz
pF
Turn-on time
tON
0.1
μs
Storage time
tSTG
1.0
μs
tF
0.1
μs
Fall time
Test Conditions
IC = -10 mA, IB = 0
VCB = -50 V, IE = 0
VEB = -5 V, IC = 0
VCE = -2 V, IC = -0.5 A
VCE = -2 V, IC = -2.0 A
IC = -1 A, IB = -0.05 A
IC = -1 A, IB = -0.05 A
VCE = -2 V, IC = -0.5 A
VCB = -10 V, IE = 0, f = 1 MHz
CLASSIFICATION OF hFE
Rank
O
Y
hFE
70 – 140
120 - 240
http://www.SeCoSGmbH.com/
01-June-2004 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2
BCP1213
Elektronische Bauelemente
PNP
Epitaxial Planar Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
01-June-2004 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2