2SC2873 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-89 FEATURES z Low saturation voltage z High speed switching time z Complementary to 2SA1213 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V REF. VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2 A PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100μA , IC=0 5 V Collector cut-off current ICBO VCB=50V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA hFE1 VCE=2V, IC=500mA 70 hFE2 VCE=2V, IC=2A 40 240 DC current gain Collector-emitter saturation voltage VCE(sat) IC=1A, IB=50mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=1A, IB=50mA 1.2 V fT Transition frequency Collector output capacitance Switching Time Turn on Time ton Storage Time tstg Fall Time CLASSIFICATION OF Rank Range Marking http://www.SeCoSGmbH.com 08-May-2007 Rev. A Cob VCE=2V, IC=500mA 120 MHz VCB=10V, IE=0, f=1MHz 30 pF 0.1 VCC=30V, IC=1A, IB1=-IB2=0.05A 1.0 μs 0.1 tf hFE(1) O Y 70-140 120-240 MO MY Any changing of specification will not be informed individual Page 1 of 3 2SC2873 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor Typical Characteristics http://www.SeCoSGmbH.com 08-May-2007 Rev. A Any changing of specification will not be informed individual Page 2 of 3 2SC2873 NPN Silicon Elektronische Bauelemente http://www.SeCoSGmbH.com 08-May-2007 Rev. A Epitaxial Planar Transistor Any changing of specification will not be informed individual Page 3 of 3