CZD5706 5 A, 80 V NPN Epitaxial Silicon Transistor Elektronische Bauelemente D-Pack (TO-252) DESCRIPTION The CZD5706 is designed for high current switching application. FEATURES ♦ ♦ ♦ ♦ Large Current Capacitance Low Collector to Emitter Saturation Voltage High-Speed Switching High Allowable Power Dissipation A B MARKING C D Collector 2 5706 GE 1 Date Code Base B C K 3 1 E M Emitter HF N O P J SWITCHING TIME TEST CIRCUIT REF. A B C D E F G H Millimeter Min. Max. 6.35 6.80 5.20 5.50 2.20 2.40 0.40 0.60 6.40 7.35 2.20 3.00 5.40 5.80 0.60 1.20 REF. J K L M N O P Millimeter Min. Max. 2.30 TYP. 0.70 0.90 0.50 0.70 0.60 1.00 1.40 1.78 0.00 1.27 0.43 0.58 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current(Pulse) Base Current Total Power Dissipation (TA=25°C) Total Power Dissipation (TC=25°C) Junction, Storage Temperature SYMBOL RATING UNIT VCBO VCES VCEO VEBO IC ICP IB PD PD TJ, TSTG 80 80 50 6 5 7.5 1.2 0.8 15 150, -55~150 V V V V A A A W W °C ElECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Voltage, On DC Current Gain Transition Frequency Output Capacitance Turn-On Time Storage Time Fall Time 01-June-2009 Rev. A SYMBOL MIN. TYP. MAX. UNIT BVCBO BVCES BVCEO BVEBO ICBO IEBO VCE(sat)1 VCE(sat)2 VBE(sat) hFE fT COB TON TSTG TF 80 80 50 6 200 - 400 15 35 300 20 1 1 135 240 1.2 560 - V V V V µA µA mV mV V MHz pF nS nS nS TEST CONDITIONS IC=10µA, IE=0 IC=100µA, RBE=0 IC=1mA, RBE=∞ IE=10µA, IC=0 VCB=40V, IE=0 VEB=4V, IC=0 IC=1A, IB=50mA IC=2A, IB=100mA IC=2A, IB=100mA VCE=2V, IC=500mA VCE=10V, IC=500mA VCB=10V, f=1MHz See specified test circuit. See specified test circuit. See specified test circuit. Page 1 of 3 CZD5706 Elektronische Bauelemente 5 A, 80 V NPN Epitaxial Silicon Transistor CHARACTERISTIC CURVES 01-June-2009 Rev. A Page 2 of 3 CZD5706 Elektronische Bauelemente 5 A, 80 V NPN Epitaxial Silicon Transistor CHARACTERISTIC CURVES 01-June-2009 Rev. A Page 3 of 3