SECOS CZD5706

CZD5706
5 A, 80 V
NPN Epitaxial Silicon Transistor
Elektronische Bauelemente
D-Pack (TO-252)
DESCRIPTION
The CZD5706 is designed for high current switching application.
FEATURES
♦
♦
♦
♦
Large Current Capacitance
Low Collector to Emitter Saturation Voltage
High-Speed Switching
High Allowable Power Dissipation
A
B
MARKING
C
D
Collector
2
5706
GE
1
Date Code
Base
B
C
K
3
1
E
M
Emitter
HF
N
O
P
J
SWITCHING TIME TEST CIRCUIT
REF.
A
B
C
D
E
F
G
H
Millimeter
Min.
Max.
6.35
6.80
5.20
5.50
2.20
2.40
0.40
0.60
6.40
7.35
2.20
3.00
5.40
5.80
0.60
1.20
REF.
J
K
L
M
N
O
P
Millimeter
Min.
Max.
2.30 TYP.
0.70
0.90
0.50
0.70
0.60
1.00
1.40
1.78
0.00
1.27
0.43
0.58
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current(Pulse)
Base Current
Total Power Dissipation (TA=25°C)
Total Power Dissipation (TC=25°C)
Junction, Storage Temperature
SYMBOL
RATING
UNIT
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PD
PD
TJ, TSTG
80
80
50
6
5
7.5
1.2
0.8
15
150, -55~150
V
V
V
V
A
A
A
W
W
°C
ElECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
Base-Emitter Voltage, On
DC Current Gain
Transition Frequency
Output Capacitance
Turn-On Time
Storage Time
Fall Time
01-June-2009 Rev. A
SYMBOL
MIN.
TYP.
MAX.
UNIT
BVCBO
BVCES
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)1
VCE(sat)2
VBE(sat)
hFE
fT
COB
TON
TSTG
TF
80
80
50
6
200
-
400
15
35
300
20
1
1
135
240
1.2
560
-
V
V
V
V
µA
µA
mV
mV
V
MHz
pF
nS
nS
nS
TEST CONDITIONS
IC=10µA, IE=0
IC=100µA, RBE=0
IC=1mA, RBE=∞
IE=10µA, IC=0
VCB=40V, IE=0
VEB=4V, IC=0
IC=1A, IB=50mA
IC=2A, IB=100mA
IC=2A, IB=100mA
VCE=2V, IC=500mA
VCE=10V, IC=500mA
VCB=10V, f=1MHz
See specified test circuit.
See specified test circuit.
See specified test circuit.
Page 1 of 3
CZD5706
Elektronische Bauelemente
5 A, 80 V
NPN Epitaxial Silicon Transistor
CHARACTERISTIC CURVES
01-June-2009 Rev. A
Page 2 of 3
CZD5706
Elektronische Bauelemente
5 A, 80 V
NPN Epitaxial Silicon Transistor
CHARACTERISTIC CURVES
01-June-2009 Rev. A
Page 3 of 3