PZT2907A PNP Silicon Silicon Planar Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-223 DESCRIPTION The PZT2907A is designed for general purpose amplifier and high-speed switching, medium power switching applications. MARKING Collector 2907A = Date code Base Millimeter Min. Max. 6.30 6.70 6.70 7.30 3.30 3.70 1.42 1.90 4.60 REF. 0.60 0.80 0.02 0.10 10° 0° REF. B C E A B C D E F I O Emitter REF. G H J K L M N Millimeter Min. Max. 0.02 0.10 1.50 2.00 0.25 0.35 0.85 1.05 2.30 REF. 2.90 3.10 13 TYP. MAXIMUM RATINGS (TA=25 °C, unless otherwise specified) Parameter Symbol Value Unit Collector to Base Voltage VCBO -60 V Collector to Emitter Voltage VCEO -60 V Emitter to Base Voltage VEBO -5 IC -600 V mA Collector Current Total Power Dissipation Junction, Storage Temperature PD 1.5 W TJ, TSTG +150, -55 ~ +150 ℃ ELECTRICALCHARACTERISTICS (TA=25 °C unless otherwise specified) Parameter Collector - Base Breakdown Voltage Collector - Emitter Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cut - Off Current Emitter Cut - Off Current Collector - Emitter Saturation Voltage Base - Emitter Voltage DC Current Gain Transition Frequency Collector Output Capacitance Symbol Min. Typ. Max. Unit V(BR)CBO -60 - - V IC = -10uA Test Conditions V(BR)CEO -60 - - V IC = -10mA V(BR)EBO ICBO ICEX VCE(sat)1 VCE(sat)2 VBE(sat) VBE(sat) hFE1 hFE2 hFE3 hFE4 hFE5 -5 75 100 100 100 50 -0.2 -0.5 180 - -10 -50 -0.4 -1.6 -1.3 -2.6 300 - V nA nA V V V V IC = -10uA VCB = -50V VCE= -30V, VBE = -0.5V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA VCE = -10V, IC = -100 uA VCE = -10V, IC = -1mA VCE = -10V, IC = -10mA VCE = -10V, IC = -150mA VCE = -10V, IC = -500mA fT 200 - - MHz VCB = -20V, IC = -50mA, f =100 MHz COB - - 8 pF VCB = -10 V, f = 1 MHz *Pulse Test：Pulse width ≦ 380 us, Duty cycle ≦ 2 % http://www.SeCoSGmbH.com/ 31-May-2010 Rev. B Any changes of specification will not be informed individually. Page 1 of 2 PZT2907A Elektronische Bauelemente PNP Silicon Silicon Planar Medium Power Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 31-May-2010 Rev. B Any changes of specification will not be informed individually. Page 2 of 2