D965 NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-92 Audio amplifier Flash unit of camera Switching circuit G H Emitter Collector Base J A CLASSIFICATION OF hFE(2) Rank Range D REF. B R T V 340 - 600 560 - 950 900 - 2000 A B C D E F G H J K K E C F Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Collector Base Emitter ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector - Base Voltage VCBO 42 V Collector - Emitter Voltage VCEO 22 V Emitter - Base Voltage VEBO 6 V IC 5 A PC 750 mW TJ, TSTG +150, -55 ~ +150 °C Collector Current -Continuous Cpllector Power Dissipation Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise specified) Symbol Min. Typ. Max. Unit Collector - Base Breakdown Voltage Parameter V(BR)CBO 42 - - V Collector - Emitter Breakdown Voltage V(BR)CEO 22 - - V Emitter - Base Breakdown Voltage V(BR)EBO 6 - - V Collector Cut - Off Current ICBO - - 0.1 Emitter Cut - Off Current IEBO - - 0.1 A A hFE(1) 150 - - DC Current Gain hFE(2) 340 - 2000 Collector - Emitter Saturation Voltage Transition Frequency http://www.SeCoSGmbH.com/ 17-Nov-2010 Rev. A hFE(3) 150 - - VCE(sat) - - 0.35 V fT - 150 - MHz Test Conditions IC = 0.1mA, IE = 0 IC = 1 mA, IB = 0 IE = 10 μA, IC = 0 VCB = 30V, IE = 0 VEB = 6V, IC = 0 VCE = 2V, IC = 0.15 mA VCE = 2V, IC = 500 mA VCE = 2V, IC = 2A IC = 3000mA, IB = 100 mA VCE = 6V, IC = 50 mA, f = 30MHz Any changes of specification will not be informed individually. Page 1 of 2 D965 Elektronische Bauelemente NPN General Purpose Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 17-Nov-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 2