2SA673, 2SA673A PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-92 Low frequency amplifier Complementary pair with 2SC1213 and 2SC1213A G H 1Emitter 2Collector 3Base J CLASSIFICATION OF hFE(1) 2SA673-B Product-Rank A 2SA673-C D 2SA673-D Product-Rank 2SA673A-B 2SA673A-C 2SA673A-D Range 60~120 100~200 160~320 B REF. C A B C D E F G H J K K E F Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Collector 2 3 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Symbol 2SA673 2SA673A 2SA673 2SA673A Emitter to Base Voltage Continuous Collector Current Collector Power Dissipation Junction, Storage Temperature Rating Unit -35 VCBO V -50 -35 VCEO V -50 VEBO -4 V IC -500 mA PC 400 mW TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Collector to Base Breakdown 2SA673 Voltage 2SA673A V(BR)CBO Collector to Emitter Breakdown Voltage V(BR)CEO 2SA673 2SA673A Emitter to Base Breakdown Voltage Collector Cut - Off Current DC Current Gain Collector to Emitter Saturation Voltage 21-Jan-2011 Rev. C Typ. Max. -35 - - -50 - - -35 - - -50 - - Unit Test Conditions V IC= -10µA, IE=0 V IC= -1mA, IB=0 V(BR)EBO -4 - - V IE= -10µA, IC=0 ICBO - - -0.5 µA VCB= -20V, IE=0 hFE (1) 60 - 320 hFE (2) * 10 - - VCE(sat) * - - -0.6 V IC = -150mA, IB= -15mA - -0.64 - V VCE= -3V, IC= -10mA Collector to Emitter Voltage VBE * Pulse test: pulse width ≤300µs, duty cycle≤ 2.0%. http://www.SeCoSGmbH.com/ Min. VCE= -3V, IC=- 10mA VCE= -3V, IC= -500mA Any changes of specification will not be informed individually. Page 1 of 2 2SA673, 2SA673A Elektronische Bauelemente PNP General Purpose Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 21-Jan-2011 Rev. C Any changes of specification will not be informed individually. Page 2 of 2