BC635 / BC637 / BC639

BC635 / BC637 / BC639
NPN
General Purpose Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES


TO-92
Low frequency amplifier
High current transistors
G
H
Emitter
Collector
Base
CLASSIFICATION OF hFE
Product-Rank
BC635
BC637-16
40~250
Range
J
A
BC639-16
63~250
D
REF.
B
63~250
A
B
C
D
E
F
G
H
J
K
K
E
C
F
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
2.42
2.66
0.36
0.76
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Symbol
BC635
BC637
BC639
BC635
BC637
BC639
Rating
45
60
100
45
60
80
5
1
830
150, -65~150
VCBO
VCEO
Emitter to Base Voltage
Continuous Collector Current
Collector Power Dissipation
Junction, Storage Temperature
Unit
VEBO
IC
PC
TJ, TSTG
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector to Emitter
Breakdown Voltage
Symbol
BC635
BC637
BC639
Collector Cut - Off Current
Emitter cut-off current
Min.
Typ.
Max.
45
60
80
25
25
40
63
63
-
0.1
0.1
250
250
250
VCE(sat)
-
-
0.5
V
VBE
fT
-
100
1
-
V
MHz
V(BR)CEO
ICBO
ICEO
DC Current Gain
BC635
BC637-16
BC639-16
Collector to Emitter Saturation
Voltage
Base-emitter voltage
Transition frequency
hFE
DC Current Gain
http://www.SeCoSGmbH.com/
25-Dec-2014 Rev. B
Unit
Test Conditions
V
IC=10mA, IB=0
μA
μA
VCB=30V, IE=0
VEB=5V, IB=0
VCE=2V, IC=5mA
VCE=2V, IC=500mA
VCE=2V, IC=150mA
IC=500mA, IB=50mA
VCE=2V, IC=500mA
VCE=5V, IC=10mA, f=50MHz
Any changes of specification will not be informed individually.
Page 1 of 2
BC635 / BC637 / BC639
Elektronische Bauelemente
NPN
General Purpose Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
25-Dec-2014 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 2