S8050T NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES 3.5 0.2 (1.27 Typ.) 1.25 0.2 z Complimentary to S8550T Collector Current: IC = 0.5 A 0.2 0.2 1 2 3 4.5 z TO-92 4.55 0.1 14.3 0.2 2.54 1: Emitter 2: Base 3: Collector 0.43 0.46 0.08 0.07 0.1 ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Symbol Ratings Unit Collector to Base Voltage Parameter VCBO 40 V Collector to Emitter Voltage VCEO 25 V Emitter to Base Voltage VEBO 5 V Collector Currrent IC 500 mA Total Power Dissipation PD 625 mW TJ, TSTG +150, -55 ~ +150 ℃ Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TAMB = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector-base Breakdown Voltage V(BR)CBO 40 - - V IC = 100 μA, IE = 0 Collector-emitter Breakdown Voltage V(BR)CEO 25 - - V IC = 0.1 mA, IB = 0 Emitter-base Breakdown Voltage V(BR)EBO 5 - - V IE = 100 μA, IC = 0 Collector Cut-off Current ICBO - - 0.1 μA VCB = 40 V, IE = 0 Collector Cut-off Current ICEO - - 0.1 μA VCE = 20 V, IB = 0 Emitter Cut-off Current IEBO - - 0.1 μA VEB = 5 V, IC = 0 hFE(1) 85 - 400 VCE = 1 V, IC = 50 mA hFE(2) 50 - - VCE = 1 V, IC = 500 mA Collector-emitter Saturation Voltage VCE(sat) - - 0.6 V IC = 500 mA, IB = 50 mA Base-emitter Saturation Voltage VBE(sat) - - 1.2 V IC = 500 mA, IB = 50 mA fT 150 - - MHz DC Current Gain Transition Frequency Test Conditions VCE = 6 V, IC= 20 mA, f = 30 MHz CLASSIFICATION OF hFE Rank Range http://www.SeCoSGmbH.com/ 01-June-2005 Rev. B B C D D3 85 - 160 120 - 200 160 - 300 300 - 400 Any changes of specification will not be informed individually. Page 1 of 2 S8050T Elektronische Bauelemente NPN Silicon General Purpose Transistor CHARACTERISTIC CURVES S8050T http://www.SeCoSGmbH.com/ 01-June-2005 Rev. B Any changes of specification will not be informed individually. Page 2 of 2