MMBT491 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low equivalent on-resistance MARKING: SOT-23 3 Collector 491 1 Base 2 Emitter A L K 3 B S Top View 1 V J 2 C G D H Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction & Storage temperature Symbol Ratings Unit VCBO VCEO VEBO IC PC TJ, TSTG 80 60 5 1 500 150, -55~150 V V V A mW °C ELECTRICAL CHARACTERISTICS at Ta = 25°C Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Output Capacitance Symbol Min. Max. Unit V(BR)CBO 1 V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) 1 hFE(2) 1 hFE(3) 1 hFE(4) 1 VCE(sat)1 1 VCE(sat)2 1 VBE(sat) 1 VBE fT COB 80 60 5 100 100 80 30 150 - 0.1 0.1 300 0.25 0.5 1.1 1 V V V μA μA 10 V V V V MHz pF Test Conditions IC=100μA,IE=0 IC=10mA,IB=0 IE=100μA,IC=0 VCB=60V, IE=0 VEB=4V, IC=0 VCE=5V,IC=1mA VCE=5V,IC=500mA VCE=5V,IC=1A VCE=5V,IC=2A IC=500mA, IB=50mA IC=1A, IB=100mA IC=1A, IB=100mA IC=1A, VCE=5V VCE = 10V, IC = 50mA, f = 100MHz VCB = 10V, f = 1.0MHz, IE = 0 Note: 1. Measured under pulsed conditions, Pulse width = 300 μs, Duty cycle ≤ 2%. http://www.SeCoSGmbH.com/ 01-June-2002 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 MMBT491 NPN Silicon General Purpose Transistor Elektronische Bauelemente CHARACTERISTIC CURVES 0.6 0.6 + 25 C 0.5 0.5 0.4 0.4 0.3 0.3 IC / IB = 10 IC / IB = 50 0.2 - 55 C + 25 C + 100 C 0.2 0.1 0.1 0 IC / IB = 10 1mA 10mA 100mA 1A 10A 0 10mA 1mA 100mA 1A 10A IC - Collector Current IC - Collector Current V CE(sat) vs IC VCE(sat) vs IC 400 VCE = 5 V IC / IB = 10 1.0 300 + 100 C 200 0.8 0.6 + 25 C - 55 C + 25 C + 100 C 0.4 100 - 55 C 0.2 0 1mA 10mA 100mA 1A 10A 0 1mA 10mA IC -Collector Current 1A 10A IC -Collector Current h FE vs IC 1.2 100mA V BE(sat) vs IC 10 VCE = 5 V 1.0 1 0.8 0.6 - 55 C + 25 C + 100 C 0.4 0.1 0.2 0 1mA http://www.SeCoSGmbH.com/ 01-June-2002 Rev. A 10mA 100mA 1A 10A 0.01 0.1V DC 1s 100 ms 10 ms 1 ms 100 s 1V 10V 100V IC - Collector Current VCE - Collector Emitter Voltage (V) VBE(on) vs IC Safe Operat ing Area Any changes of specification will not be informed individually. Page 2 of 2