S8550T PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free TO-92 4.55 0.2 (1.27 Typ.) Excellent hFE linearity 1.25 0.2 1 2 3 4.5 z 3.5 0.2 FEATURES 0.2 0.1 14.3 0.2 2.54 1: Emitter 2: Base 3: Collector 0.43 0.46 0.08 0.07 0.1 ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Symbol Ratings Unit Collector to Base Voltage Parameter VCBO -40 V Collector to Emitter Voltage VCEO -25 V Emitter to Base Voltage VEBO -5 V Collector Currrent IC -500 mA Total Power Dissipation PD 625 mW TJ, TSTG +150, -55 ~ +150 ℃ Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TAMB = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector-base Breakdown Voltage V(BR)CBO -40 - - V IC = -100 μA, IE = 0 Collector-emitter Breakdown Voltage V(BR)CEO -25 - - V IC = -1 mA, IB = 0 Emitter-base Breakdown Voltage V(BR)EBO -5 - - V IE = -100 μA, IC = 0 Collector Cut-off Current ICBO - - -0.1 μA VCB = -40 V, IE = 0 Collector Cut-off Current ICEO - - -0.1 μA VCE = -20 V, IB = 0 Emitter Cut-off Current IEBO - - -0.1 μA VEB = -3 V, IC = 0 hFE(1) 85 - 400 VCE = -1 V, IC = -50 mA hFE(2) 50 - - VCE = -1 V, IC = -500 mA Collector-emitter Saturation Voltage VCE(sat) - - -0.6 V IC = -500 mA, IB = -50 mA Base-emitter Saturation Voltage VBE(sat) - - -1.2 V IC = -500 mA, IB = -50 mA fT 150 - - MHz DC Current Gain Transition Frequency Test Conditions VCE = -6 V, IC= -20 mA, f = 30 MHz CLASSIFICATION OF hFE Rank Range http://www.SeCoSGmbH.com/ 01-June-2007 Rev. C B C D D3 85 - 160 120 - 200 160 - 300 300 - 400 Any changes of specification will not be informed individually. Page 1 of 2 S8550T Elektronische Bauelemente PNP Silicon General Purpose Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 01-June-2007 Rev. C Any changes of specification will not be informed individually. Page 2 of 2