MMBT5401 PNP Silicon General PurposeTransistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A L Ideal for medium power amplification and switching 3 3 C B Top View 1 1 MARKING 2 K E 2 2L D F H G J ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Collector to Emitter Voltage Collector to Base Voltage Emitter to Base Voltage Collector Current - Continuous VCEO VCBO VEBO IC -150 -160 -5.0 -500 REF. Unit A B C D E F V V V mA Millimeter Min. Max. 2.80 3.00 2.25 2.55 1.20 1.40 0.90 1.15 1.80 2.00 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.55 REF. 0.08 0.15 0.5 REF. 0.95 TYP. THERMAL CHARACTERISTICS Parameter TA = 25°C Derate above 25°C Total Power Dissipation Thermal Resistance, Junction to Ambient Symbol Ratings Unit PD 225 1.8 mW mW / ℃ RθJA 556 ℃/W PD 300 2.4 mW mW / ℃ RθJA 417 ℃/W TJ, TSTG -55 ~ +150 ℃ (2) Alumina Substrate, TA = 25°C Derate above 25°C Total Power Dissipation Thermal Resistance, Junction to Ambient Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Test Conditions Symbol Min. Max. Unit Off Characteristics Collector–Emitter Breakdown Voltage IC = -1.0 mA, IB = 0 BVCEO -150 - V Collector–Base Breakdown Voltage IC = -100 μA, IE = 0 BVCBO -160 - V IE = -10 μA, IC = 0 BVEBO -5.0 - V nA μA Emitter–Base Breakdown Voltage VCB = -120 V, IE = 0 VCB = -120 V, IE = 0, TA = 100°C ICES - -100 -100 DC Current Gain IC = –1.0 mA, VCE = –5.0 V IC = –10 mA, VCE = –5.0 V IC = –50 mA, VCE = –5.0 V hFE 80 100 50 200 - - Collector–Emitter Saturation Voltage IC = –10 mA, IB = –1.0 mA IC = –50 mA, IB = –5.0 mA VCE(sat) - -0.2 -0.5 V Base–Emitter Saturation Voltage IC = –10 mA, IB = –1.0 mA IC = –50 mA, IB = –5.0 mA VBE(sat) - -1.0 -1.0 V fT 100 - MHz COBO - 6.0 pF hFE 50 200 - NF - 8.0 dB Collector Cutoff Current On Characteristics Small Signal Characteristics Current-Gain - Bandwidth Product IC =-10 mA, VCE = -10 V, f = 100 MHz Output Capacitance VCB = -10 V, IE = 0, f = 1.0 MHz Small Signal Current Gain IC = -1.0 mA, VCE =-10 V, f = 1.0 kHz Noise Figure IC = –200 μA, VCE = –5.0 V, RS = 10 Ω, f = 1.0 kHz Note: 01-June-2002 Rev. A 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Page 1 of 3 MMBT5401 PNP Silicon General PurposeTransistor Elektronische Bauelemente CHARACTERISTICS CURVE 200 hFE , CURRENT GAIN 150 TJ = 125 C 100 25 C 70 50 -55 C VCE = -1.0 V VCE = -5.0 V 30 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 100 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 1.0 0.9 0.8 0.7 0.6 IC = 1.0 mA 0.5 10 mA 30 mA 100 mA 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT ( μ A) Figure 2. Collector Saturation Region 103 102 VCE = 30 V IC = ICES 101 TJ = 125 C 100 75 C 10-1 10-2 10-3 0.3 REVERSE 25 C 0.2 0.1 FORWARD 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 3. Collector Cut-Off Region 01-June-2002 Rev. A Page 2 of 3 MMBT5401 PNP Silicon General PurposeTransistor Elektronische Bauelemente 0.9 TJ = 25 C V, VOLTAGE (VOLTS) 0.8 0.7 0.6 VBE(sat)@ IC / IB = 10 0.5 0.4 0.3 0.2 VCE(sat) @ IC / IB = 10 0.1 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 20 30 50 10 100 2.5 TJ = -55 C to 135 C 2.0 1.5 1.0 0.5 θVC for VCE(sat) 0 -0.5 -1.0 -1.5 θVB for VBE(sat) -2.0 -2.5 0.1 0.2 0.3 0.5 2.0 3.0 5.0 10 20 30 50 IC, COLLECTOR CURRENT (mA) Figure 4. "On" Voltages Figure 5. Temperature Coefficients VCC -30 V VBB + 8.8 V 10.2 V 100 Vin 0.25μF 10μs INPUT PULSE tr, ft10 ns Vin DUTY CYCLE = 1.0% 3.0k RC Vout RB 5.1k TJ = 25 C 30 C ibo 20 10 7.0 5.0 C obo 2.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 Values Shown are for IC @ 10 mA VR, REVERSE VOLTAGE (VOLTS) Figure 6. Switching Time Test Circuit Figure 7. Capacitances t r @ VCC = 120 V 300 t r @ VCC = 30 V 200 100 70 50 t d @ VBE(off) = 1.0 V VCC = 120 V 20 1.0 2.0 3.0 5.0 10 20 30 50 1000 700 500 300 200 IC / IB = 10 TJ = 25 C tf @ CC V = 120 V t f @ VCC = 30 V t s@ VCC = 120 V 100 70 50 30 01-June-2002 Rev. A 20 2000 t, TIME (ns) 1000 700 IC / IB = 10 500 TJ = 25 C 10 0.2 0.3 0.5 100 3.0 1N914 100 100 70 50 1.0 0.2 0.3 t, TIME (ns) 1.0 IC, COLLECTOR CURRENT (mA) C, CAPACITANCE (pF) 1.0 θ V, TEMPERATURE COEFFICIENT (mV/ C) CHARACTERISTICS CURVE 30 100 200 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 8. Turn-On Time Figure 9. Turn-Off Time 100 200 Page 3 of 3