SECOS MMBT5401

MMBT5401
PNP Silicon
General PurposeTransistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
A
L
Ideal for medium power amplification and switching
3
3
C B
Top View
1
1
MARKING
2
K
E
2
2L
D
F
H
G
J
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol Ratings
Collector to Emitter Voltage
Collector to Base Voltage
Emitter to Base Voltage
Collector Current - Continuous
VCEO
VCBO
VEBO
IC
-150
-160
-5.0
-500
REF.
Unit
A
B
C
D
E
F
V
V
V
mA
Millimeter
Min.
Max.
2.80
3.00
2.25
2.55
1.20
1.40
0.90
1.15
1.80
2.00
0.30
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.10 REF.
0.55 REF.
0.08
0.15
0.5 REF.
0.95 TYP.
THERMAL CHARACTERISTICS
Parameter
TA = 25°C
Derate above 25°C
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Symbol
Ratings
Unit
PD
225
1.8
mW
mW / ℃
RθJA
556
℃/W
PD
300
2.4
mW
mW / ℃
RθJA
417
℃/W
TJ, TSTG
-55 ~ +150
℃
(2)
Alumina Substrate, TA = 25°C
Derate above 25°C
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Junction, Storage Temperature
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Test Conditions
Symbol
Min.
Max.
Unit
Off Characteristics
Collector–Emitter Breakdown Voltage
IC = -1.0 mA, IB = 0
BVCEO
-150
-
V
Collector–Base Breakdown Voltage
IC = -100 μA, IE = 0
BVCBO
-160
-
V
IE = -10 μA, IC = 0
BVEBO
-5.0
-
V
nA
μA
Emitter–Base Breakdown Voltage
VCB = -120 V, IE = 0
VCB = -120 V, IE = 0, TA = 100°C
ICES
-
-100
-100
DC Current Gain
IC = –1.0 mA, VCE = –5.0 V
IC = –10 mA, VCE = –5.0 V
IC = –50 mA, VCE = –5.0 V
hFE
80
100
50
200
-
-
Collector–Emitter Saturation Voltage
IC = –10 mA, IB = –1.0 mA
IC = –50 mA, IB = –5.0 mA
VCE(sat)
-
-0.2
-0.5
V
Base–Emitter Saturation Voltage
IC = –10 mA, IB = –1.0 mA
IC = –50 mA, IB = –5.0 mA
VBE(sat)
-
-1.0
-1.0
V
fT
100
-
MHz
COBO
-
6.0
pF
hFE
50
200
-
NF
-
8.0
dB
Collector Cutoff Current
On Characteristics
Small Signal Characteristics
Current-Gain - Bandwidth Product
IC =-10 mA, VCE = -10 V, f = 100 MHz
Output Capacitance
VCB = -10 V, IE = 0, f = 1.0 MHz
Small Signal Current Gain
IC = -1.0 mA, VCE =-10 V, f = 1.0 kHz
Noise Figure
IC = –200 μA, VCE = –5.0 V, RS = 10 Ω, f = 1.0 kHz
Note:
01-June-2002 Rev. A
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Page 1 of 3
MMBT5401
PNP Silicon
General PurposeTransistor
Elektronische Bauelemente
CHARACTERISTICS CURVE
200
hFE , CURRENT GAIN
150
TJ = 125 C
100
25 C
70
50
-55 C
VCE = -1.0 V
VCE = -5.0 V
30
20
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
IC, COLLECTOR CURRENT (mA)
20
30
50
100
10
20
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
1.0
0.9
0.8
0.7
0.6
IC = 1.0 mA
0.5
10 mA
30 mA
100 mA
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
IB, BASE CURRENT (mA)
IC, COLLECTOR CURRENT ( μ A)
Figure 2. Collector Saturation Region
103
102
VCE = 30 V
IC = ICES
101
TJ = 125 C
100
75 C
10-1
10-2
10-3
0.3
REVERSE
25 C
0.2
0.1
FORWARD
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 3. Collector Cut-Off Region
01-June-2002 Rev. A
Page 2 of 3
MMBT5401
PNP Silicon
General PurposeTransistor
Elektronische Bauelemente
0.9
TJ = 25 C
V, VOLTAGE (VOLTS)
0.8
0.7
0.6
VBE(sat)@ IC / IB = 10
0.5
0.4
0.3
0.2 VCE(sat) @ IC / IB = 10
0.1
0
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
20 30 50
10
100
2.5
TJ = -55 C to 135 C
2.0
1.5
1.0
0.5
θVC for VCE(sat)
0
-0.5
-1.0
-1.5
θVB for VBE(sat)
-2.0
-2.5
0.1
0.2 0.3 0.5
2.0 3.0 5.0
10
20 30 50
IC, COLLECTOR CURRENT (mA)
Figure 4. "On" Voltages
Figure 5. Temperature Coefficients
VCC
-30 V
VBB
+ 8.8 V
10.2 V
100
Vin
0.25μF
10μs
INPUT PULSE
tr, ft10 ns
Vin
DUTY CYCLE = 1.0%
3.0k
RC
Vout
RB
5.1k
TJ = 25 C
30
C ibo
20
10
7.0
5.0
C obo
2.0
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
Values Shown are for IC @ 10 mA
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Switching Time Test Circuit
Figure 7. Capacitances
t r @ VCC = 120 V
300
t r @ VCC = 30 V
200
100
70
50
t d @ VBE(off) = 1.0 V
VCC = 120 V
20
1.0
2.0 3.0 5.0
10
20 30 50
1000
700
500
300
200
IC / IB = 10
TJ = 25 C
tf @ CC
V = 120 V
t f @ VCC = 30 V
t s@ VCC = 120 V
100
70
50
30
01-June-2002 Rev. A
20
2000
t, TIME
(ns)
1000
700 IC / IB = 10
500 TJ = 25 C
10
0.2 0.3 0.5
100
3.0
1N914
100
100
70
50
1.0
0.2 0.3
t, TIME (ns)
1.0
IC, COLLECTOR CURRENT (mA)
C, CAPACITANCE (pF)
1.0
θ V, TEMPERATURE COEFFICIENT (mV/ C)
CHARACTERISTICS CURVE
30
100 200
20
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30 50
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 8. Turn-On Time
Figure 9. Turn-Off Time
100 200
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