MMBTA55 / MMBTA56 PNP Silicon Elektronische Bauelemente Driver Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 SOT-23 3 A 1 L 2 3 C OLLE C TOR 3 B S Top View 1 V 2 G 1 B AS E C 2 E MIT T E R D H K J Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm ƔMAXIMUM RATINGS RATING Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous SYMBOL MMBTA55 MMBTA56 MMBTA55 MMBTA56 VCEO VCBO VEBO IC VALUE -60 -80 -60 -80 -4.0 -500 UNIT MAX. 225 1.8 556 300 2.4 417 -55 ~ +150 UNIT mW mW / к к/W mW mW / к к/W к V V V mA Marking Code: MMBTA55:2H , MMBTA56:2GM ƔTHERMAL CHARACTERISTICS CHARACTERISTIC Total Device Dissipation FR-5 Board(1) TA = 25 к Derate Above 25 к Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2), TA = 25 к Derate Above 25 к Thermal Resistance, Junction to Ambient Operating and Storage Junction Temperature Range 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A SYMBOL PD RșJA PD RșJA TJ, TSTG Any changing of specification will not be informed individual Page 1 of 4 MMBTA55 / MMBTA56 PNP Silicon Elektronische Bauelemente Driver Transistor ƔELECTRICAL CHARACTERISTICS (T A = 25 к unless otherwise noted) CHARACTERISTIC SYMBOL Min. Max. UNIT V(BR)CEO -60 -80 - V V(BR)EBO -4.0 - V ICES - -0.1 nA ICBO - -0.1 -0.1 µA hFE 100 100 - - VCE(sat) - -0.25 V VBE(ON) - -1.2 V OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(3) (IC = -1.0 mA, IB = 0) Emitter - Base Breakdown Voltage (IE = -100 µA, IC = 0) Collector Cutoff Current (VCE = -60 V, IB = 0 V) Collector Cutoff Current (VCB = -60 V, IE = 0) (VCB = -80 V, IE = 0) MMBTA55 MMBTA56 MMBTA55 MMBTA56 ON CHARACTERISTICS DC Current Gain (IC = -10 mA, VCE = -1.0 V) (IC = -100 mA, VCE = -1.0 V) Collector - Emitter Saturation Voltage (IC = -100 mA, IB = -10 mA) Base - Emitter Saturation Voltage (IC = -100 mA, Vce = -1.0 V) SMALL - SIGNAL CHARACTERISTICS Current - Gain - Bandwidth Product(4) (IC = -100 mA, VCE = -1.0 V, f = 100 MHz) 3. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0 %. 4. fT is defined as the frequency at which | hfe | extrapolates to unity. fT TURN-ON TIME VCC -1.0 V 5.0 ms 100 +10 V 0 tr = 3.0 ns +40 V RL VCC 100 OUTPUT Vin * CS t 6.0 pF 5.0 mF MHz TURN-OFF TIME +VBB RB Vin - 50 RL OUTPUT RB * CS t 6.0 pF 5.0 mF 100 +40 V 100 5.0 ms tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 4 MMBTA55 / MMBTA56 PNP Silicon Elektronische Bauelemente Driver Transistor f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) ƔSWITCHING TIME EQUIVALENT TEST CIRCUITS 200 100 VCE = -2.0 V TJ = 25°C 50 C, CAPACITANCE (pF) 100 70 50 30 -5.0 -7.0 -10 -20 -30 -50 -70 -100 Cobo 10 5.0 -0.1 -0.2 -200 -0.5 -1.0 -2.0 -5.0 -10 -20 Figure 2. Current–Gain — Bandwidth Product Figure 3. Capacitance -50 -100 400 TJ = 125°C VCE = -1.0 V ts h FE, DC CURRENT GAIN t, TIME (ns) 20 VR, REVERSE VOLTAGE (VOLTS) 300 200 20 30 IC, COLLECTOR CURRENT (mA) 1.0 k 700 500 30 Cibo 7.0 20 -2.0 -3.0 100 70 50 TJ = 25°C 70 tf VCC = -40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 10 -5.0 -7.0 -10 25°C -55°C 100 80 60 tr td @ VBE(off) = -0.5 V -20 -30 200 -50 -70 -100 -200 -300 40 -0.5 -1.0 -2.0 -500 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 4. Switching Time Figure 5. DC Current Gain -1.0 TJ = 25°C -0.8 V, VOLTAGE (VOLTS) -500 VBE(sat) @ IC/IB = 10 -0.6 VBE(on) @ VCE = -1.0 V -0.4 -0.2 0 -0.5 VCE(sat) @ IC/IB = 10 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 IC, COLLECTOR CURRENT (mA) Figure 6. “ON” Voltages http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 3 of 4 MMBTA55 / MMBTA56 PNP Silicon Elektronische Bauelemente -1.0 R qVB , TEMPERATURE COEFFICIENT (mV/° C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Driver Transistor TJ = 25°C -0.8 IC = -100 mA IC = -50 mA IC = -250 mA -0.6 IC = -500 mA -0.4 -0.2 IC = -10 mA 0 -0.05 -0.1 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -1.2 -1.6 -2.0 RqVB for VBE -2.4 -2.8 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Collector Saturation Region Figure 8. Base–Emitter Temperature Coefficient http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A -0.5 -0.8 -500 Any changing of specification will not be informed individual Page 4 of 4